KR960019521A

KR960019521A - How to Form Plug for Metal Wiring

Info

Publication number: KR960019521A
Application number: KR1019940031858A
Authority: KR
Inventors: 김춘환; 황성보
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1994-11-29
Filing date: 1994-11-29
Publication date: 1996-06-17

Abstract

본 발명은 금속배선 형성을 위해 금속 콘택홀 지역에 플러그를 형성하는 플러그 형성 방법에 있어서, 콘택홀(10)이 형성된 기판 전체 구조 상부에 플러그 형성용 물질(13)을 형성하는 제1단계, 상기 콘택홀(10)과 오버랩(overlap)되는 지역 이외의 플러그 형성용 물질(13)을 잔유물 없이 제거한 후, 상기 콘택홀(10)과 오버랩(overlap)되는 지역의 플러그 형성용 물질(13)을 전면 식각하여 콘택홀 내부에 과제거되지 않은 플러그(13′)를 형성하는 제2단계를 포함하는 것을 특징으로 하는 금속배선의 플러그 형성 방법에 관한 것으로, 전면 식각 공정중 콘택홀 상부 이외의 지역을 먼저 전면식각한 다음, 콘택홀 상부를 다시 식각하는 2단계 공정으로 전면 식각을 진행함으로써, 종래의 공정에서 발생하는 텅스텐 잔유물 및 콘택홀내의 텅스텐 과제거 문제를 해결하여 금속배선의 신뢰성을 향상시키는 효과를 가져온다.The present invention provides a plug forming method for forming a plug in a metal contact hole region for forming a metal wiring, the method comprising: forming a plug forming material (13) on an entire structure of a substrate on which a contact hole (10) is formed; After removing the plug forming material 13 other than the area overlapping the contact hole 10 without residue, the front surface of the plug forming material 13 in the area overlapping the contact hole 10 is removed. And a second step of etching to form a plug (13 ') that is not excessively removed in the contact hole. After etching the entire surface, the entire surface is etched in a two-step process of etching the upper part of the contact hole again, thereby solving the problem of removing tungsten residue and tungsten excess in the contact hole. It brings the effect of improving the reliability of fast wiring.

Description

How to Form Plug for Metal Wiring

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1F도는 본 발명의 일실시예에 따른 금속배선 형성 공정도.Figure 1F is a metallization process diagram according to an embodiment of the present invention.

Claims

A plug forming method of forming a plug in a metal contact hole region for forming a metal wiring, the method comprising: forming a plug forming material on an entire structure of a substrate on which a contact hole is formed; an area overlapping the contact hole And removing a plug forming material other than residues, and then etching the entire plug forming material in a region overlapping with the contact hole. 2.

The method of claim 1, wherein the second step includes forming a photoresist pattern in a region overlapping with the contact hole through a photolithography process, and etching the entire surface of the plug forming material using the photoresist as an etch barrier. And removing the entire surface of the plug forming material in the region overlapping with the contact hole.

The method of claim 2, wherein the photoresist pattern size overlapping the contact hole is formed to be at least equal to or larger than the size of the contact hole.

The method of claim 3, wherein the plug forming material is tungsten.

※ Note: The disclosure is based on the initial application.