KR970052361A - Contact Forming Method of Semiconductor Device - Google Patents

Contact Forming Method of Semiconductor Device Download PDF

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Publication number
KR970052361A
KR970052361A KR1019950057036A KR19950057036A KR970052361A KR 970052361 A KR970052361 A KR 970052361A KR 1019950057036 A KR1019950057036 A KR 1019950057036A KR 19950057036 A KR19950057036 A KR 19950057036A KR 970052361 A KR970052361 A KR 970052361A
Authority
KR
South Korea
Prior art keywords
contact
semiconductor device
forming
present
forming method
Prior art date
Application number
KR1019950057036A
Other languages
Korean (ko)
Inventor
양흥모
신윤승
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950057036A priority Critical patent/KR970052361A/en
Publication of KR970052361A publication Critical patent/KR970052361A/en

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Abstract

본 발명은 반도체장치의 콘택형성방법에 관해 개시한다. 본 발명에 의한 콘택형성방법은 반도체장치의 하부 도전층에 자기정합적으로 패드층을 형성한 다음 그 위에 간접적으로 콘택을 형성하는 반도체장치의 콘택형성방법에 있어서, 상기 패드층을 사용함이 없이 자기정합적으로 직접 반도체장치의 하부도전층에 콘택을 형성하는 것을 특징으로 한다. 본 발명에 의한 반도체장치는 일반적인 콘택공정에 콘택홀을 형성하기 위한 식각과정에서 부딪치는 각종 구성요소들을 보호하는 막질과 식각으로 제거되는 막질을 고 식각선택비를 갖는 물질로 형성함으로써, 비트라인 콘택 및 스토리지 노드 콘택 등을 자기정합적으로 형성할 수 있다. 이와 같이 본 발명은 종래 기술에서처럼 콘택을 위한 별도의 패드층을 형성하지 않으므로서 공정을 단순하게 진행할 수 있다.The present invention discloses a method for forming a contact of a semiconductor device. The contact forming method according to the present invention is a contact forming method of a semiconductor device in which a pad layer is formed on a lower conductive layer of a semiconductor device and then indirectly formed thereon, without using the pad layer. The contact is directly formed on the lower conductive layer of the semiconductor device. In the semiconductor device according to the present invention, a bit line contact is formed by forming a film having a high etching selectivity and a film having a high etching selectivity to protect various components encountered during an etching process for forming a contact hole in a general contact process. And a storage node contact or the like may be self-aligned. As such, the present invention can simply proceed the process without forming a separate pad layer for contact as in the prior art.

Description

반도체장치의 콘택형성방법Contact Forming Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명에 의한 자기정합적 콘택형성방법으로 형성된 반도체장치의 비트라인에서 본 단면도이다.3 is a cross-sectional view of the bit line of the semiconductor device formed by the self-aligned contact forming method according to the present invention.

제4도는 본 발명에 의한 자기정합적으로 형성된 콘택을 포함하는 평면도이다.4 is a plan view of a self-aligned contact according to the present invention.

Claims (3)

반도체장치의 하부 도전층에 자기정합적으로 패드층을 형성한 다음 그 위에 간접적으로 콘택을 형성하는 반도체장치의 콘택형성방법에 있어서, 상기 패드층을 사용함이 없이 자기정합적으로 직접 반도체장치의 하부도전층에 콘택을 형성하는 것을 특징으로 하는 반도체장치의 콘택형성방법.A contact forming method of a semiconductor device in which a pad layer is formed on a lower conductive layer of a semiconductor device and then indirectly formed thereon, wherein the bottom of the semiconductor device is directly and directly aligned without using the pad layer. Forming a contact on the conductive layer. 제1항에 있어서, 상기 자기정합적인 콘택을 형성하기 위해 상기 반도체장치의 비트라인 및 게이트전극 전면에는 상기 콘택을 형성하기 위해 제거되는 막질보다 고 식각선택비를 갖는 절연막을 형성하는 것을 특징으로 하는 반도체장치의 콘택형성방법.The semiconductor device of claim 1, wherein an insulating film having an etch selectivity higher than that of a film removed to form the contact is formed on the entire surface of the bit line and the gate electrode of the semiconductor device to form the self-aligned contact. Method for forming a contact of a semiconductor device. 제2항에 있어서, 상기 고 식각선택비를 갖는 절연막은 산화막과 나이트라이드로 이루어진 일군중 선택된 어느 하나로 형성하는 것을 특징으로 하는 반도체장치의 콘택형성방법.The method of claim 2, wherein the insulating layer having the high etching selectivity is formed by any one selected from the group consisting of an oxide film and nitride. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950057036A 1995-12-26 1995-12-26 Contact Forming Method of Semiconductor Device KR970052361A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950057036A KR970052361A (en) 1995-12-26 1995-12-26 Contact Forming Method of Semiconductor Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950057036A KR970052361A (en) 1995-12-26 1995-12-26 Contact Forming Method of Semiconductor Device

Publications (1)

Publication Number Publication Date
KR970052361A true KR970052361A (en) 1997-07-29

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950057036A KR970052361A (en) 1995-12-26 1995-12-26 Contact Forming Method of Semiconductor Device

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KR (1) KR970052361A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040008482A (en) * 2002-07-18 2004-01-31 주식회사 하이닉스반도체 A method for forming a semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040008482A (en) * 2002-07-18 2004-01-31 주식회사 하이닉스반도체 A method for forming a semiconductor device

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