KR970052361A - Contact Forming Method of Semiconductor Device - Google Patents
Contact Forming Method of Semiconductor Device Download PDFInfo
- Publication number
- KR970052361A KR970052361A KR1019950057036A KR19950057036A KR970052361A KR 970052361 A KR970052361 A KR 970052361A KR 1019950057036 A KR1019950057036 A KR 1019950057036A KR 19950057036 A KR19950057036 A KR 19950057036A KR 970052361 A KR970052361 A KR 970052361A
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- KR
- South Korea
- Prior art keywords
- contact
- semiconductor device
- forming
- present
- forming method
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 반도체장치의 콘택형성방법에 관해 개시한다. 본 발명에 의한 콘택형성방법은 반도체장치의 하부 도전층에 자기정합적으로 패드층을 형성한 다음 그 위에 간접적으로 콘택을 형성하는 반도체장치의 콘택형성방법에 있어서, 상기 패드층을 사용함이 없이 자기정합적으로 직접 반도체장치의 하부도전층에 콘택을 형성하는 것을 특징으로 한다. 본 발명에 의한 반도체장치는 일반적인 콘택공정에 콘택홀을 형성하기 위한 식각과정에서 부딪치는 각종 구성요소들을 보호하는 막질과 식각으로 제거되는 막질을 고 식각선택비를 갖는 물질로 형성함으로써, 비트라인 콘택 및 스토리지 노드 콘택 등을 자기정합적으로 형성할 수 있다. 이와 같이 본 발명은 종래 기술에서처럼 콘택을 위한 별도의 패드층을 형성하지 않으므로서 공정을 단순하게 진행할 수 있다.The present invention discloses a method for forming a contact of a semiconductor device. The contact forming method according to the present invention is a contact forming method of a semiconductor device in which a pad layer is formed on a lower conductive layer of a semiconductor device and then indirectly formed thereon, without using the pad layer. The contact is directly formed on the lower conductive layer of the semiconductor device. In the semiconductor device according to the present invention, a bit line contact is formed by forming a film having a high etching selectivity and a film having a high etching selectivity to protect various components encountered during an etching process for forming a contact hole in a general contact process. And a storage node contact or the like may be self-aligned. As such, the present invention can simply proceed the process without forming a separate pad layer for contact as in the prior art.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제3도는 본 발명에 의한 자기정합적 콘택형성방법으로 형성된 반도체장치의 비트라인에서 본 단면도이다.3 is a cross-sectional view of the bit line of the semiconductor device formed by the self-aligned contact forming method according to the present invention.
제4도는 본 발명에 의한 자기정합적으로 형성된 콘택을 포함하는 평면도이다.4 is a plan view of a self-aligned contact according to the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950057036A KR970052361A (en) | 1995-12-26 | 1995-12-26 | Contact Forming Method of Semiconductor Device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950057036A KR970052361A (en) | 1995-12-26 | 1995-12-26 | Contact Forming Method of Semiconductor Device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970052361A true KR970052361A (en) | 1997-07-29 |
Family
ID=66618289
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950057036A KR970052361A (en) | 1995-12-26 | 1995-12-26 | Contact Forming Method of Semiconductor Device |
Country Status (1)
Country | Link |
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KR (1) | KR970052361A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040008482A (en) * | 2002-07-18 | 2004-01-31 | 주식회사 하이닉스반도체 | A method for forming a semiconductor device |
-
1995
- 1995-12-26 KR KR1019950057036A patent/KR970052361A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040008482A (en) * | 2002-07-18 | 2004-01-31 | 주식회사 하이닉스반도체 | A method for forming a semiconductor device |
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WITN | Withdrawal due to no request for examination |