KR970052248A - Contact hole formation method of semiconductor device - Google Patents
Contact hole formation method of semiconductor device Download PDFInfo
- Publication number
- KR970052248A KR970052248A KR1019950050499A KR19950050499A KR970052248A KR 970052248 A KR970052248 A KR 970052248A KR 1019950050499 A KR1019950050499 A KR 1019950050499A KR 19950050499 A KR19950050499 A KR 19950050499A KR 970052248 A KR970052248 A KR 970052248A
- Authority
- KR
- South Korea
- Prior art keywords
- contact hole
- etching
- semiconductor device
- polymer
- etching process
- Prior art date
Links
Abstract
본 발명은 반도체소자의 콘택홀 제조방법에 관한 것으로, 다양한 크기의 콘택홀을 한번의 마스크 공정으로 식각하기 위하여 층간절연막을 식각하는 콘택 식각공정을 산화막 식각 및 상기 식각 공정시 발생된 폴리머의 제거공정으로 나누어 수차례 반복 진행하여 한번의 마스크 공정으로 다양한 크기의 콘택홀을 마이크로 로딩 효과없이 형성하였으므로, 공정이 간단하고 공정여유도가 증가되어 공정수율 및 소자 동작의 신뢰성을 향상시킬 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a contact hole in a semiconductor device. The contact etching process of etching an interlayer insulating film to etch contact holes of various sizes in a single mask process is performed by oxide film etching and the removal of polymer generated during the etching process. Divided into several times, contact holes of various sizes were formed without a micro loading effect in a single mask process, so that the process was simple and the process margin was increased, thereby improving process yield and device operation reliability.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제3A도 및 제3B도는 본 발명에 따른 반도체소자의 콘택홀 제조 공정도.3A and 3B are diagrams illustrating a process for manufacturing contact holes in a semiconductor device according to the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950050499A KR970052248A (en) | 1995-12-15 | 1995-12-15 | Contact hole formation method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950050499A KR970052248A (en) | 1995-12-15 | 1995-12-15 | Contact hole formation method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970052248A true KR970052248A (en) | 1997-07-29 |
Family
ID=66595105
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950050499A KR970052248A (en) | 1995-12-15 | 1995-12-15 | Contact hole formation method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970052248A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9337105B1 (en) | 2014-12-03 | 2016-05-10 | Samsung Electronics Co., Ltd. | Methods for fabricating semiconductor devices with wet etching |
-
1995
- 1995-12-15 KR KR1019950050499A patent/KR970052248A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9337105B1 (en) | 2014-12-03 | 2016-05-10 | Samsung Electronics Co., Ltd. | Methods for fabricating semiconductor devices with wet etching |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR970052248A (en) | Contact hole formation method of semiconductor device | |
KR980005592A (en) | Self-aligned contact hole forming method | |
KR950025875A (en) | Method for manufacturing metal contact vias in semiconductor devices | |
KR960026804A (en) | Stack capacitor manufacturing method of semiconductor device | |
KR960039285A (en) | Semiconductor device manufacturing method | |
KR980005477A (en) | Via contact hole formation method of semiconductor device | |
KR940012499A (en) | How to Form Contact Holes | |
KR960026210A (en) | Fine contact formation method | |
KR970052249A (en) | Method for manufacturing contact hole of semiconductor device | |
KR960012324A (en) | Gate electrode contact of semiconductor device and manufacturing method thereof | |
KR970030777A (en) | Capacitor Manufacturing Method of Semiconductor Device | |
KR970052231A (en) | Contact hole formation method of semiconductor device | |
KR970013314A (en) | Capacitor Manufacturing Method of Semiconductor Device | |
KR940016838A (en) | Integrated circuit device and its manufacturing method | |
KR970052290A (en) | Manufacturing method of semiconductor device | |
KR970018745A (en) | Capacitor Manufacturing Method of Semiconductor Device | |
KR970052361A (en) | Contact Forming Method of Semiconductor Device | |
KR930001389A (en) | How to Form Metal Contacts | |
KR980005474A (en) | Semiconductor device manufacturing method | |
KR970053571A (en) | Semiconductor device and manufacturing method thereof | |
KR950015587A (en) | Contact hole formation method of semiconductor device | |
KR970077208A (en) | Semiconductor device and manufacturing method thereof | |
KR970030678A (en) | Method of manufacturing capacitors in semiconductor devices | |
KR960026289A (en) | Contact hole formation method of semiconductor device | |
KR940004836A (en) | Contact hole formation method of semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Withdrawal due to no request for examination |