KR970052248A - Contact hole formation method of semiconductor device - Google Patents

Contact hole formation method of semiconductor device Download PDF

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Publication number
KR970052248A
KR970052248A KR1019950050499A KR19950050499A KR970052248A KR 970052248 A KR970052248 A KR 970052248A KR 1019950050499 A KR1019950050499 A KR 1019950050499A KR 19950050499 A KR19950050499 A KR 19950050499A KR 970052248 A KR970052248 A KR 970052248A
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KR
South Korea
Prior art keywords
contact hole
etching
semiconductor device
polymer
etching process
Prior art date
Application number
KR1019950050499A
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Korean (ko)
Inventor
정진기
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950050499A priority Critical patent/KR970052248A/en
Publication of KR970052248A publication Critical patent/KR970052248A/en

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Abstract

본 발명은 반도체소자의 콘택홀 제조방법에 관한 것으로, 다양한 크기의 콘택홀을 한번의 마스크 공정으로 식각하기 위하여 층간절연막을 식각하는 콘택 식각공정을 산화막 식각 및 상기 식각 공정시 발생된 폴리머의 제거공정으로 나누어 수차례 반복 진행하여 한번의 마스크 공정으로 다양한 크기의 콘택홀을 마이크로 로딩 효과없이 형성하였으므로, 공정이 간단하고 공정여유도가 증가되어 공정수율 및 소자 동작의 신뢰성을 향상시킬 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a contact hole in a semiconductor device. The contact etching process of etching an interlayer insulating film to etch contact holes of various sizes in a single mask process is performed by oxide film etching and the removal of polymer generated during the etching process. Divided into several times, contact holes of various sizes were formed without a micro loading effect in a single mask process, so that the process was simple and the process margin was increased, thereby improving process yield and device operation reliability.

Description

반도체소자의 콘택홀 형성 방법Contact hole formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3A도 및 제3B도는 본 발명에 따른 반도체소자의 콘택홀 제조 공정도.3A and 3B are diagrams illustrating a process for manufacturing contact holes in a semiconductor device according to the present invention.

Claims (4)

반도체기판상에 층간절연막을 형성하는 공정과, 상기 반도체기판에서 상측 도전배선과의 콘택으로 예정되어 있는 부분 상측의 평탄화막의 일부 두께를 제거하는 공정과 상기 식각 공정시 생성된 폴리머를 제거하는 공정을 다수번 반복하여 콘택홀을 형성하는 고정을 구비하는 반도체소자의 콘택홀 제조방법.Forming an interlayer insulating film on the semiconductor substrate; removing a portion of the planarization film on the upper portion of the semiconductor substrate, which is intended to be in contact with the upper conductive wiring; and removing the polymer produced during the etching process. A contact hole manufacturing method of a semiconductor device having a fixing to form a contact hole repeatedly a plurality of times. 제1항에 있어서, 상기 층간절연막을 BPSG 이나 TEOS 산화막을 형성하는 것을 특징으로 하는 반도체소자의 콘택홀 제조방법.The method of claim 1, wherein the interlayer insulating film is formed of a BPSG or TEOS oxide film. 제1항에 있어서, 상기 폴리머 식각공정을 그후, 상기 폴리머 제거 공정을 F를 함유하는 가스와 O가 함유된 가스를 혼합 사용하여 제거하는 것을 특징으로 하는 반도체소자의 콘택홀 제조방법.2. The method of claim 1, wherein the polymer etching process is followed by removing the polymer removing process by using a gas containing F and a gas containing O. 3. 제1항에 있어서, 상기 폴리머 식각 공정시 감광막패턴의 측방향 식각이 일어나지 않도록 바이어스 파워를 50W 이상으로하여 실시하는 것을 특징으로 하는 반도체소자의 콘택홀 제조방법.The method of claim 1, wherein the bias power is 50 W or more so as not to cause lateral etching of the photoresist pattern during the polymer etching process. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950050499A 1995-12-15 1995-12-15 Contact hole formation method of semiconductor device KR970052248A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950050499A KR970052248A (en) 1995-12-15 1995-12-15 Contact hole formation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950050499A KR970052248A (en) 1995-12-15 1995-12-15 Contact hole formation method of semiconductor device

Publications (1)

Publication Number Publication Date
KR970052248A true KR970052248A (en) 1997-07-29

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Family Applications (1)

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KR1019950050499A KR970052248A (en) 1995-12-15 1995-12-15 Contact hole formation method of semiconductor device

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KR (1) KR970052248A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9337105B1 (en) 2014-12-03 2016-05-10 Samsung Electronics Co., Ltd. Methods for fabricating semiconductor devices with wet etching

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9337105B1 (en) 2014-12-03 2016-05-10 Samsung Electronics Co., Ltd. Methods for fabricating semiconductor devices with wet etching

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