KR970018745A - Capacitor Manufacturing Method of Semiconductor Device - Google Patents

Abstract

A manufacturing method of a semiconductor device capable of improving reliability and yield in a simple process is disclosed. The present invention provides a method of forming a first insulating film, a second insulating film, an etch stop layer, and a third insulating film on a semiconductor substrate on which a transistor is formed, and forming a first photoresist pattern on the third insulating film. Anisotropically etching the third insulating film, the etch stop layer, the second insulating film, and the first insulating film using a first photoresist pattern as a mask to form a contact hole exposing a source or a drain, and anisotropically etching the photoresist pattern. Forming a second photoresist pattern having a wider width, and anisotropically etching a part of the third insulating film, the first nitride film, and the second insulating film using the second photoresist pattern as a mask to form a stepped contact hole Forming a first conductive layer on an entire surface of the substrate on which the stepped contact holes are formed, and forming a fourth insulating layer to fill the stepped contact holes. Forming a storage node by anisotropically etching the first conductive layer using the fourth insulating layer as a mask, removing the fourth insulating layer and the third insulating layer by wet etching; Removing the etch stop layer by wet etching; and forming a dielectric film and a plate electrode on the entire surface of the resultant to form a capacitor. According to the present invention, the pattern formation of the storage node can be self-aligned to prevent short circuit due to the storage node pattern, and after the etch barrier is removed, a subsequent process can be performed to simplify the process and increase reliability and yield. have.

Description

Capacitor Manufacturing Method of Semiconductor Device

Since this is an open matter, no full text was included.

2A to 2G and 3A to 3G are sectional views showing the capacitor manufacturing method of the semiconductor device according to the present invention.

Claims (5)

Sequentially forming a first insulating film, a second insulating film, an etch stop layer, and a third insulating film on the semiconductor substrate on which the transistor is formed; Forming a first photoresist pattern on the third insulating film; Anisotropically etching the third insulating film, the etch stop layer, the second insulating film, and the first insulating film using the first photoresist pattern as a mask to form a contact hole exposing a source or a drain; Anisotropically etching the photoresist pattern to form a second photoresist pattern having an expanded width; Anisotropically etching a portion of the third insulating film, the first nitride film, and the second insulating film using the second photoresist pattern as a mask to form a stepped contact hole; Forming a first conductive layer on an entire surface of the substrate on which the stepped contact holes are formed; Forming a fourth insulating film to fill the stepped contact hole; Forming a storage node by anisotropically etching the first conductive layer using the fourth insulating layer as a mask; Removing the fourth insulating film and the third insulating film by wet etching; Removing the etch stop layer by wet etching; And forming a capacitor by forming a dielectric film and a plate electrode on the entire surface of the resultant. The method of claim 1, wherein the second insulating film is any one selected from a BPSG film, a plasma oxide film, and a TEOS film that is easily planarized. The method of claim 1, wherein the etch stop layer is a nitride layer having a large selectivity during wet etching with the second insulating layer. The method of claim 1, wherein the fourth insulating film is a SOG film or a photoresist film having high mobility. The method of manufacturing a capacitor of a semiconductor device according to claim 1, wherein said dielectric film is an ONO film or a tantalum oxide film. ※ Note: The disclosure is based on the initial application.