KR950025997A - Capacitor Manufacturing Method of Semiconductor Device - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a capacitor of a semiconductor device. In particular, when manufacturing a capacitor having a stacked structure, the bit line is formed to have a certain height in order to increase the surface area of the charge storage electrode. While extending, the formation of silicide by the transition metal film on the surface of the protruding bit line improves the operation speed of the device and increases the insulation effect of the device by forming a transition metal oxide film between the charge storage electrode and the bit line. It is a skill.

Description

Capacitor Manufacturing Method of Semiconductor Device

Since this is an open matter, no full text was included.

2A through 2D are cross-sectional views illustrating steps of forming a capacitor according to the present invention.

Claims (5)

A method of manufacturing a capacitor of a semiconductor device, comprising: forming a transistor having a gate electrode and a source / drain region on a silicon substrate, and sequentially forming an insulating oxide film, a nitride film, and a planarizing oxide film over the entire structure of the transistor. Forming a contact hole exposing the source / drain regions by removing the planarizing oxide film, the nitride film, and the insulating oxide film of the bit line contact portion, and forming a first polysilicon film on the entire structure; Etching the polysilicon film until the planarization oxide film is exposed to form a bit line pattern having a predetermined height, leaving the first polysilicon film only in the contact hole; and removing the planarization oxide film and removing the transition gold film and nitride film. After forming on top of the whole structure, a high temperature heat treatment is followed by a transition metal film on the surface of the bit line. Silver silicide and a transition metal film on the surface of the nitride film are formed of a transition metal oxide film, and the source / drain regions are exposed by sequentially etching the nitride film, the transition metal oxide film, the nitride film, and the oxide film of the charge storage electrode contact region. Forming a contact hole, depositing a second polysilicon film on the entire structure, and forming a charge storage electrode formed by patterning the second polysilicon film by a photolithography process using a charge storage electrode mask, and forming a dielectric on the A method for manufacturing a capacitor of a semiconductor device comprising the step of forming a film and a plate electrode to form a capacitor having an increased surface area. The charge storage electrode of claim 1, wherein the bit line second polysilicon layer is partially etched when the charge storage electrode including the second polysilicon layer pattern is formed by a photolithography process using the charge storage electrode mask. Capacitor manufacturing method of a semiconductor device characterized in that it is separated from each other. The semiconductor device according to claim 1, wherein the high temperature heat treatment is performed in a diffusion furnace of 800 ° C. or higher so that silicide is formed on the surface of the first polysilicon film and a transition metal oxide film is formed on the surface of the nitride film. Capacitor Manufacturing Method. A method of manufacturing a capacitor of a semiconductor device, comprising: forming a transistor having a gate electrode and a source / drain region on a silicon substrate, and sequentially forming an insulating oxide film, a nitride film, and a planarizing oxide film over the entire structure of the transistor. Forming a contact hole exposing the source / drain regions by removing the planarizing oxide film, the nitride film, and the insulating oxide film of the bit line contact portion, and forming a first polysilicon film on the entire structure; Etching the polysilicon film until the planarization oxide film is exposed to form a bit line pattern having a predetermined height, leaving the first polysilicon film only in the contact hole; removing the planarization oxide film and removing the transition metal film and the nitride film. After forming on top of the whole structure, a high temperature heat treatment is followed by a transition metal film on the surface of the bit line. Silver silicide, and the transition metal film on the surface of the nitride film are formed of a transition metal oxide film, and the nitride film, the transition metal oxide film, the nitride film, and the oxide film of the charge storage electrode contact region are sequentially etched to expose the source / drain regions. Forming a contact hole, depositing a second polysilicon layer on the entire structure, forming the second polysilicon layer pattern by a photolithography process using a charge storage electrode mask, and applying a CVD oxide layer on the entire structure. Forming a CVD oxide film pattern for exposing the charge storage electrode, depositing a third polysilicon film on the entire structure, filling a photoresist film with the recesses of the third polysilicon film, and etching the exposed third polysilicon film Forming a cylinder-shaped charge storage electrode electrically connected to the second polysilicon film, and I, and the capacitor manufacturing method of the semiconductor device by forming a dielectric film and a plate electrode on the surface of the charge storage electrode comprising the step of increasing the surface area of the capacitor. The method of claim 4, wherein when forming the second polysilicon layer by a photolithography process using the charge storage electrode mask, a portion of the second polysilicon layer is etched on the bit line to separate neighboring second polysilicon layers from each other. A method for manufacturing a capacitor of a semiconductor device, characterized in that. ※ Note: The disclosure is based on the initial application.