KR950030338A - Capacitor Manufacturing Method of Semiconductor Device - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a capacitor of a semiconductor device, comprising: applying an etched wall layer with a material having an etching selectivity difference on an interlayer insulating film to planarize a semiconductor substrate on which a field oxide film, a MOS transistor, and a bead line are formed, and then etching the source electrode. After removing the barrier layer and the interlayer insulating layer, a charge storage electrode contact hole is formed, and an insulation spacer is formed on the sidewall of the charge storage electrode contact hole, which is formed lower than the interlayer insulating layer using an etch barrier layer during the etching process of the insulating spacer. And a charge storage electrode including a first conductive layer pattern filling the charge storage electrode contact hole and a second conductive layer pattern having a circular shape connected to the first conductive layer pattern, thus providing an alignment margin of the charge storage electrode mask. Is increased, which is advantageous for high integration, and the insulation spacer is not damaged, thus improving process yield and device operation. It can improve the castle.

Description

Capacitor Manufacturing Method of Semiconductor Device

Since this is an open matter, no full text was included.

3A to 3D are diagrams illustrating a capacitor manufacturing process of a semiconductor device in accordance with another embodiment of the present invention.

Claims (7)

Forming a first insulating film on the entire surface of the semiconductor substrate having source and drain electrodes formed on the semiconductor substrates on both sides of the field oxide film, the gate oxide film, the gate electrode and the gate electrode for device isolation; Forming a bit line connected to the drain electrode; forming a second insulating layer on the entire surface of the structure; and forming an etch barrier layer on the second insulating layer with a material having an etching selectivity difference with the second insulating layer. Forming a charge storage electrode contact hole exposing the source electrode by sequentially removing the etching barrier layer from the etch barrier layer on the source electrode to the first insulating layer; and forming a charge storage electrode contact hole on the sidewall of the charge storage electrode contact hole. A method for manufacturing a capacitor of a semiconductor device, comprising the step of forming an insulating spacer lower than an upper surface of the substrate. The method of manufacturing a capacitor of a semiconductor device according to claim 1, wherein said first insulating film is formed of an oxide film. The method of manufacturing a capacitor of a semiconductor device according to claim 1, wherein said second insulating film is formed of a BPSG single film or a red film of USG / BPSG. The method of claim 1, wherein the etching barrier layer is formed of a nitride film or a silicon film. A first insulating film pattern having contact holes for exposing the source electrode on a semiconductor substrate having a source electrode and a drain electrode formed on the semiconductor substrates on both sides of the field oxide layer, the gate underlayer, and the gate electrode for device isolation. Forming a contact plug having a conductive layer pattern filling the contact hole, forming a second insulating film for leveling on the entire surface of the structure, and forming a second insulating film on the second insulating film. (2) forming an etch barrier layer with a material having an etching selectivity difference between the insulating layer, and forming a charge storage electrode contact mask on the etch barrier layer above the first insulating layer pattern to expose the contact plug; The etch barrier layer and the second insulating layer exposed by the storage electrode contact mask are sequentially removed to expose the contact plug. Forming a charge storage electrode contact hole, forming an insulating spacer lower than an upper surface of the second insulating film on the sidewall of the charge storage electrode contact hole, and forming a first conductive layer on the entire surface of the structure Filling the storage electrode contact hole, and forming a regenerative film pattern on the first conductive layer on the charge storage electrode contact hole, and removing the first conductive layer exposed by the regenerative film pattern to isolate the first conductive layer patterns. And forming a circular conductive second conductive layer pattern on the sidewall of the regenerative film pattern, connecting the first conductive layer pattern to the first conductive layer pattern, and removing the regenerative film pattern. Way. The method of claim 5, wherein the contact plug and the first and second conductive layers are formed of silicon. The method of manufacturing a capacitor of a semiconductor device according to claim 5, wherein the regenerative film pattern is formed of an oxide film. ※ Note: This is to be disclosed by the original application.