KR970052599A - Etching Method of Semiconductor Device - Google Patents

Etching Method of Semiconductor Device Download PDF

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Publication number
KR970052599A
KR970052599A KR1019950057072A KR19950057072A KR970052599A KR 970052599 A KR970052599 A KR 970052599A KR 1019950057072 A KR1019950057072 A KR 1019950057072A KR 19950057072 A KR19950057072 A KR 19950057072A KR 970052599 A KR970052599 A KR 970052599A
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KR
South Korea
Prior art keywords
conductive layer
etching method
semiconductor device
etching
photoresist pattern
Prior art date
Application number
KR1019950057072A
Other languages
Korean (ko)
Inventor
심경보
김기상
황연백
고성훈
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950057072A priority Critical patent/KR970052599A/en
Publication of KR970052599A publication Critical patent/KR970052599A/en

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Abstract

본 발명은 반도체장치의 식각방법에 관해 개시한다. 본 발명에 의한 식각방법은 아래에는 콘택홀을 포함하는 절연마 패턴이 형성되어 있고, 위에는 포토레지스트 패턴이 형성되어 있는 두꺼운 도전층을 식각하는 반도체장치의 식각방법에 있어서, 상기 포토레지스트 패턴을 형성하기 전에 상기 도전층 전면에 얇은 절연막을 형성하는 것을 특징으로 한다.The present invention discloses an etching method of a semiconductor device. According to the etching method of the present invention, an insulating hemp pattern including a contact hole is formed below, and a photoresist pattern is formed in the etching method of a semiconductor device for etching a thick conductive layer having a photoresist pattern formed thereon. Before this, a thin insulating film is formed on the entire conductive layer.

본 발명에 의하면, 도전층상에 산화막으로 형성되는 제3절연막을 형성하므로, 종래 기술에서 두꺼운 도전층을 식각할 때 발생되던 부작용들(예컨데, 스커드와 마우스 바이트등)을 제거하면서 높은 유도전력을 사용할 수 있으므로 식각시간을 크게 줄일수 있는 장점을 갖고 있다.According to the present invention, since a third insulating film formed of an oxide film is formed on the conductive layer, high induction power can be used while eliminating side effects (e.g., scud and mouse bite) caused by etching a thick conductive layer in the prior art. It can be used to reduce the etching time significantly.

Description

반도체장치의 식각방법Etching Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제5도는 본 발명에 의한 반도체장치의 식각방법을 나타낸 도면5 is a view showing an etching method of a semiconductor device according to the present invention.

Claims (3)

아래에는 콘택홀을 포함하는 절연막 패턴이 형성되어 있고, 위에는 포토레지스트 패턴이 형성되어 있는 두꺼운 도전층을 식각하는 반도체장치의 식각방법에 있어서, 상기 포토레지스트 패턴을 형성하기 전에 상기 도전층 전면에 얇은 절연막을 형성하는 것을 특징으로 하는 반도체장치의 식각방법.An etching method of a semiconductor device, in which an insulating layer pattern including a contact hole is formed below, and a thick conductive layer on which a photoresist pattern is formed is etched, wherein the thin film is formed on the entire surface of the conductive layer before forming the photoresist pattern. An etching method of a semiconductor device, comprising forming an insulating film. 제1항에 있어서, 상기 절연막은 산화막으로 형성되는 것을 특징으로 하는 반도체장치의 식각방법.The etching method of claim 1, wherein the insulating layer is formed of an oxide layer. 제1항에 있어서, 상기 도전층은 폴리실리콘층으로 형성하는 것을 특징으로 하는 반도체장치의 식각방법.The method of claim 1, wherein the conductive layer is formed of a polysilicon layer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950057072A 1995-12-26 1995-12-26 Etching Method of Semiconductor Device KR970052599A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950057072A KR970052599A (en) 1995-12-26 1995-12-26 Etching Method of Semiconductor Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950057072A KR970052599A (en) 1995-12-26 1995-12-26 Etching Method of Semiconductor Device

Publications (1)

Publication Number Publication Date
KR970052599A true KR970052599A (en) 1997-07-29

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ID=66618318

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950057072A KR970052599A (en) 1995-12-26 1995-12-26 Etching Method of Semiconductor Device

Country Status (1)

Country Link
KR (1) KR970052599A (en)

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