KR970052599A - Etching Method of Semiconductor Device - Google Patents
Etching Method of Semiconductor Device Download PDFInfo
- Publication number
- KR970052599A KR970052599A KR1019950057072A KR19950057072A KR970052599A KR 970052599 A KR970052599 A KR 970052599A KR 1019950057072 A KR1019950057072 A KR 1019950057072A KR 19950057072 A KR19950057072 A KR 19950057072A KR 970052599 A KR970052599 A KR 970052599A
- Authority
- KR
- South Korea
- Prior art keywords
- conductive layer
- etching method
- semiconductor device
- etching
- photoresist pattern
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 반도체장치의 식각방법에 관해 개시한다. 본 발명에 의한 식각방법은 아래에는 콘택홀을 포함하는 절연마 패턴이 형성되어 있고, 위에는 포토레지스트 패턴이 형성되어 있는 두꺼운 도전층을 식각하는 반도체장치의 식각방법에 있어서, 상기 포토레지스트 패턴을 형성하기 전에 상기 도전층 전면에 얇은 절연막을 형성하는 것을 특징으로 한다.The present invention discloses an etching method of a semiconductor device. According to the etching method of the present invention, an insulating hemp pattern including a contact hole is formed below, and a photoresist pattern is formed in the etching method of a semiconductor device for etching a thick conductive layer having a photoresist pattern formed thereon. Before this, a thin insulating film is formed on the entire conductive layer.
본 발명에 의하면, 도전층상에 산화막으로 형성되는 제3절연막을 형성하므로, 종래 기술에서 두꺼운 도전층을 식각할 때 발생되던 부작용들(예컨데, 스커드와 마우스 바이트등)을 제거하면서 높은 유도전력을 사용할 수 있으므로 식각시간을 크게 줄일수 있는 장점을 갖고 있다.According to the present invention, since a third insulating film formed of an oxide film is formed on the conductive layer, high induction power can be used while eliminating side effects (e.g., scud and mouse bite) caused by etching a thick conductive layer in the prior art. It can be used to reduce the etching time significantly.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제5도는 본 발명에 의한 반도체장치의 식각방법을 나타낸 도면5 is a view showing an etching method of a semiconductor device according to the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950057072A KR970052599A (en) | 1995-12-26 | 1995-12-26 | Etching Method of Semiconductor Device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950057072A KR970052599A (en) | 1995-12-26 | 1995-12-26 | Etching Method of Semiconductor Device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970052599A true KR970052599A (en) | 1997-07-29 |
Family
ID=66618318
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950057072A KR970052599A (en) | 1995-12-26 | 1995-12-26 | Etching Method of Semiconductor Device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970052599A (en) |
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1995
- 1995-12-26 KR KR1019950057072A patent/KR970052599A/en not_active Application Discontinuation
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WITN | Withdrawal due to no request for examination |