KR970023884A - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor device Download PDFInfo
- Publication number
- KR970023884A KR970023884A KR1019950033721A KR19950033721A KR970023884A KR 970023884 A KR970023884 A KR 970023884A KR 1019950033721 A KR1019950033721 A KR 1019950033721A KR 19950033721 A KR19950033721 A KR 19950033721A KR 970023884 A KR970023884 A KR 970023884A
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- semiconductor device
- oxide film
- field oxide
- film
- Prior art date
Links
Abstract
본 발명은 필드산화막 형성후 돌출된 필드산화막을 CMP방법으로 제거하여 줌으로써 간단한 공정으로 평탄화시켜 줄 수 있는 반도체 소자의 제조방법에 관한 것이다. 본 발명의 반도체 소자의 제조방법은 제1도전형의 반도체기판상의 액티브 영역상에 산화 억제막을 형성하는 공정과, 산화 억제막을 이용하여 필드 영역상에 필드 산화막을 형성하는 공정과, CMP 방식을 이용하여 필드 산화막의 돌출부위를 식각하는 공정을 포함한다.The present invention relates to a method for manufacturing a semiconductor device that can be planarized by a simple process by removing the protruding field oxide film after the formation of the field oxide film by the CMP method. The method of manufacturing a semiconductor device of the present invention uses a step of forming an oxide suppression film on an active region on a first conductive semiconductor substrate, a step of forming a field oxide film on a field region using an oxidation suppression film, and a CMP method. Thereby etching the protruding portion of the field oxide film.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제2도(A)-(E)는 본 발명의 실시예에 따른 반도체 소자의 제조공정도이다.2 (A)-(E) are manufacturing process diagrams of a semiconductor device according to an embodiment of the present invention.
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950033721A KR970023884A (en) | 1995-10-02 | 1995-10-02 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950033721A KR970023884A (en) | 1995-10-02 | 1995-10-02 | Manufacturing method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970023884A true KR970023884A (en) | 1997-05-30 |
Family
ID=66583509
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950033721A KR970023884A (en) | 1995-10-02 | 1995-10-02 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970023884A (en) |
-
1995
- 1995-10-02 KR KR1019950033721A patent/KR970023884A/en not_active Application Discontinuation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR980006510A (en) | Manufacturing Method of Semiconductor Device | |
KR970030640A (en) | Method of forming device isolation film in semiconductor device | |
KR960042931A (en) | Manufacturing Method of Semiconductor Device Having SOI Structure | |
KR970023884A (en) | Manufacturing method of semiconductor device | |
KR960019522A (en) | Plug Formation Method for Semiconductor Devices | |
KR980006032A (en) | Method of forming an isolation region of a semiconductor device | |
KR970054438A (en) | Power MOS device having an inclined gate oxide film and method of manufacturing same | |
KR960002691A (en) | Semiconductor device and manufacturing method | |
KR100485933B1 (en) | Method for manufacturing nano-gate semiconductor | |
KR940012572A (en) | Contact Forming Method in Semiconductor Device | |
KR970052394A (en) | Method for forming contact hole in semiconductor device | |
KR960002471A (en) | Method for manufacturing silicon-on-insulator (SOI) device and its structure | |
KR960005811A (en) | Polysilicon layer formation method of semiconductor device | |
KR970052599A (en) | Etching Method of Semiconductor Device | |
KR970052145A (en) | Twin well formation method of semiconductor device | |
KR970053050A (en) | Manufacturing method of MOS transistor of semiconductor device | |
KR970024283A (en) | MOS transistor and manufacturing method thereof | |
KR960043103A (en) | Device isolation insulating film formation method of semiconductor device | |
KR960039378A (en) | Capacitor Manufacturing Method of Semiconductor Memory Device | |
KR970023887A (en) | MOSFET manufacturing method | |
KR920008923A (en) | Device isolation region formation method of semiconductor integrated circuit | |
KR970003520A (en) | Contact hole formation method of a fine semiconductor device | |
KR960015845A (en) | Isolation Method of Semiconductor Devices | |
KR980005893A (en) | Method of manufacturing transistor of semiconductor device | |
KR980005486A (en) | Contact hole formation method of semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Withdrawal due to no request for examination |