KR970023884A - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device Download PDF

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Publication number
KR970023884A
KR970023884A KR1019950033721A KR19950033721A KR970023884A KR 970023884 A KR970023884 A KR 970023884A KR 1019950033721 A KR1019950033721 A KR 1019950033721A KR 19950033721 A KR19950033721 A KR 19950033721A KR 970023884 A KR970023884 A KR 970023884A
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KR
South Korea
Prior art keywords
manufacturing
semiconductor device
oxide film
field oxide
film
Prior art date
Application number
KR1019950033721A
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Korean (ko)
Inventor
김응수
심상철
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950033721A priority Critical patent/KR970023884A/en
Publication of KR970023884A publication Critical patent/KR970023884A/en

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Abstract

본 발명은 필드산화막 형성후 돌출된 필드산화막을 CMP방법으로 제거하여 줌으로써 간단한 공정으로 평탄화시켜 줄 수 있는 반도체 소자의 제조방법에 관한 것이다. 본 발명의 반도체 소자의 제조방법은 제1도전형의 반도체기판상의 액티브 영역상에 산화 억제막을 형성하는 공정과, 산화 억제막을 이용하여 필드 영역상에 필드 산화막을 형성하는 공정과, CMP 방식을 이용하여 필드 산화막의 돌출부위를 식각하는 공정을 포함한다.The present invention relates to a method for manufacturing a semiconductor device that can be planarized by a simple process by removing the protruding field oxide film after the formation of the field oxide film by the CMP method. The method of manufacturing a semiconductor device of the present invention uses a step of forming an oxide suppression film on an active region on a first conductive semiconductor substrate, a step of forming a field oxide film on a field region using an oxidation suppression film, and a CMP method. Thereby etching the protruding portion of the field oxide film.

Description

반도체 소자의 제조방법Manufacturing method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도(A)-(E)는 본 발명의 실시예에 따른 반도체 소자의 제조공정도이다.2 (A)-(E) are manufacturing process diagrams of a semiconductor device according to an embodiment of the present invention.

Claims (5)

제1도전형의 반도체 기판상의 액티브 영역상에 산화 억제막을 형성하는 공정과, 산화 억제막을 이용하여 필드 영역상에 필드 산화막을 형성하는 공정과, CMP 방식을 이용하여 필드 산화막의 돌출부위를 식각하는 공정을 포함하는 것을 특징으로 하는 반도체 소자의 제조방법.Forming an oxide suppression film on the active region on the first conductive semiconductor substrate, forming a field oxide film on the field region using the oxidation suppression film, and etching protruding portions of the field oxide film using the CMP method A method of manufacturing a semiconductor device comprising the step. 제1항 있어서, 액티브 영역상에 게이트를 형성하는 공정과, 게이트를 마스크로 하여 제2도전형의 불순물을 이온주입하여 소오스/드레인 영역을 형성하는 공정을 더 포함하는 것을 특징으로 하는 반도체 소자의 제조방법.The semiconductor device of claim 1, further comprising forming a gate on the active region and forming a source / drain region by ion implanting impurities of a second conductivity type using the gate as a mask. Manufacturing method. 제1항에 있어서, 산화 억제막을 필드 산화막의 돌출부위를 식각하는 공정 전에 제거하는 것을 특징으로 하는 반도체 소자의 제조방법.The method of manufacturing a semiconductor device according to claim 1, wherein the oxidation inhibiting film is removed before the step of etching the protruding portion of the field oxide film. 제1항에 있어서, 산화 억제막을 필드산화막의 돌출부위를 식각하는 공정후에 제거하는 것을 특징으로 하는 반도체소자의 제조방법.The method of manufacturing a semiconductor device according to claim 1, wherein the oxidation inhibiting film is removed after the step of etching the protruding portion of the field oxide film. 제1항에 있어서, 필드산화막의 돌출부위를 표면단차가 200 내지 1000Å가 되도록 식각하는 것을 특징으로 하는 반도체 소자의 제조방법.The method of manufacturing a semiconductor device according to claim 1, wherein the protruding portion of the field oxide film is etched so as to have a surface step of 200 to 1000 GPa. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950033721A 1995-10-02 1995-10-02 Manufacturing method of semiconductor device KR970023884A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950033721A KR970023884A (en) 1995-10-02 1995-10-02 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950033721A KR970023884A (en) 1995-10-02 1995-10-02 Manufacturing method of semiconductor device

Publications (1)

Publication Number Publication Date
KR970023884A true KR970023884A (en) 1997-05-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950033721A KR970023884A (en) 1995-10-02 1995-10-02 Manufacturing method of semiconductor device

Country Status (1)

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KR (1) KR970023884A (en)

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