KR960039378A - Capacitor Manufacturing Method of Semiconductor Memory Device - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a capacitor of a semiconductor memory device, and to prevent the occurrence of leakage current due to stress and to simplify the manufacturing process by not using a nitride film when manufacturing a fin structure capacitor.

The present invention provides a process for forming an insulating film on the entire surface of the gate on a semiconductor substrate on which a transistor including a gate, a gate insulating film, a source and a drain is formed, a process of forming an oxide film containing impurities on the entire surface of the substrate, and an oxide film containing the impurities. Alternately forming one or more layers each of the conductive layer and the oxide film containing impurities, and selectively forming a contact hole for exposing a predetermined region of the semiconductor substrate by selectively etching the oxide film containing the impurities, the conductive layer and the insulating film on the gate. Forming a conductive layer on the entire surface of the substrate including the contact hole, patterning the oxide layers containing the conductive layers and the impurities into a predetermined capacitor storage node pattern, and removing the oxide layer containing the impurities. A capacitor of a semiconductor memory device comprising a step Provide corrective measures.

Description

Capacitor Manufacturing Method of Semiconductor Memory Device

As this is a public information case, the full text was not included.

2 is a process flowchart showing a capacitor manufacturing method of a semiconductor memory device according to the present invention.

Claims (3)

Forming an insulating film on the entire surface of the gate on a semiconductor substrate on which a transistor comprising a gate, a gate insulating film, a source and a drain is formed, forming an oxide film containing impurities on the entire surface of the substrate, and a conductive layer on the oxide film containing impurities Alternately forming one or more layers of an oxide film containing an oxide and an impurity; and forming a contact hole exposing a predetermined region on a semiconductor substrate by selectively etching the oxide film containing the impurity, the conductive layer, and the insulating film on the gate. Forming a conductive layer on the entire surface of the substrate including the contact hole; patterning the conductive layers and the oxide layers containing impurities into a predetermined capacitor storage node pattern; and removing the oxide layer containing impurities. Of the semiconductor memory device, characterized in that Capacitor manufacturing method. The method of claim 1, wherein the impurity containing coral film is PSG. The method of claim 1, wherein the oxide film containing impurities is removed by wet etching using an etching solution having a selectivity to an insulating film formed over the gate. ※ Note: The disclosure is based on the initial application.