KR940016543A - Removal method of natural oxide film on polysilicon layer - Google Patents

Removal method of natural oxide film on polysilicon layer Download PDF

Info

Publication number
KR940016543A
KR940016543A KR1019920027332A KR920027332A KR940016543A KR 940016543 A KR940016543 A KR 940016543A KR 1019920027332 A KR1019920027332 A KR 1019920027332A KR 920027332 A KR920027332 A KR 920027332A KR 940016543 A KR940016543 A KR 940016543A
Authority
KR
South Korea
Prior art keywords
oxide film
polysilicon layer
natural oxide
native oxide
removal method
Prior art date
Application number
KR1019920027332A
Other languages
Korean (ko)
Inventor
김동균
이상선
김명수
심상현
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019920027332A priority Critical patent/KR940016543A/en
Publication of KR940016543A publication Critical patent/KR940016543A/en

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

본 발명은 폴리실리콘 증착 및 인(P)주입후, 텅스텐 실리사이드 증착을 위한 챔버내에서 WI-Si 증착전에 플라즈마(NF3또는 SF6가스)를 이용하여 폴리실리콘층의 자연 산화막을 제거한 후, 웨이퍼를 대기중에 노출시키지 않고, in-situ(원위치) 방식으로 동일 챔버내에서 W-Si 박막을 증착하는 방법이다.After the polysilicon deposition and phosphorus (P) injection, after removing the natural oxide film of the polysilicon layer using a plasma (NF 3 or SF 6 gas) before the WI-Si deposition in the chamber for tungsten silicide deposition, the wafer It is a method of depositing a W-Si thin film in the same chamber in an in-situ manner without exposing to the atmosphere.

Description

폴리실리콘층상의 자연 산화막 제거 방법Removal method of natural oxide film on polysilicon layer

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (3)

반도체 제조 공정중 폴리실리콘 증착후 POCl3도핑 또는 인(P) 주입된 웨이퍼의 자연 산화막을 제거하는 방법에 있어서, 폴리실리콘층상의 자연 산화막 제거를 위한 에칭 공정 및 텅스텐 실리사이드(W-Si)박막 증착 공정을 동일한 챔버내에서 연속적으로 수행하는 것을 특징으로 하는 자연 산화막 제거 방법.In the method of removing a native oxide film of POCl 3 doped or phosphorus (P) implanted wafer after polysilicon deposition during semiconductor manufacturing process, an etching process and a tungsten silicide (W-Si) thin film deposition for removing the native oxide film on the polysilicon layer A method for removing a native oxide film, characterized in that the process is carried out continuously in the same chamber. 제 1 항에 있어서, 상기 자연 산화막 제거는 플라즈마를 이용한 에칭 공정에 의해 수행되는 것을 특징으로 하는 자연 산화막 제거 방법.The method of claim 1, wherein the removal of the native oxide film is performed by an etching process using plasma. 제 2 항에 있어서, 상기 플라즈마는 NF3또는 SF6가스 플라즈마인 것을 특징으로 하는 자연 산화막 제거 방법.The method of claim 2, wherein the plasma is NF 3 or SF 6 gas plasma. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920027332A 1992-12-31 1992-12-31 Removal method of natural oxide film on polysilicon layer KR940016543A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920027332A KR940016543A (en) 1992-12-31 1992-12-31 Removal method of natural oxide film on polysilicon layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920027332A KR940016543A (en) 1992-12-31 1992-12-31 Removal method of natural oxide film on polysilicon layer

Publications (1)

Publication Number Publication Date
KR940016543A true KR940016543A (en) 1994-07-23

Family

ID=67220098

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920027332A KR940016543A (en) 1992-12-31 1992-12-31 Removal method of natural oxide film on polysilicon layer

Country Status (1)

Country Link
KR (1) KR940016543A (en)

Similar Documents

Publication Publication Date Title
KR900013588A (en) Film formation method
KR970013387A (en) Method of manufacturing thin film transistor
KR970008377A (en) Semiconductor device manufacturing method and semiconductor manufacturing apparatus
KR960039157A (en) Manufacturing method of semiconductor device having buried contact structure
KR940016543A (en) Removal method of natural oxide film on polysilicon layer
KR940016887A (en) Method of forming fine gate electrode of semiconductor device
KR950030238A (en) Method of forming polyside layer for wiring of semiconductor device
KR910019127A (en) Well region formation method of semiconductor device
KR950009914A (en) Method for forming source / drain junction of semiconductor device
KR940001279A (en) Metal wiring formation method of semiconductor
KR960026122A (en) Polysilicon layer formation method of semiconductor device
KR950021090A (en) Contact hole formation method of semiconductor device
KR970063477A (en) High energy ion implantation method using mask
KR980005703A (en) Method of manufacturing semiconductor device
KR920013625A (en) Ion Implantation Method of Semiconductor Device
KR960005940A (en) Device isolation oxide film formation method
KR920015592A (en) LDD structure transistor manufacturing method
KR900002419A (en) A method of forming a high concentration source region and a capacitor surface region of a semiconductor device using a selective sidewall doping technique (SSWDT) and the semiconductor integrated device
KR910005441A (en) Buried contact formation method using silicide
KR970053021A (en) Method of forming a semiconductor device
KR960035875A (en) Gate electrode formation method of semiconductor device
KR900002423A (en) Source region and capacitor surface region formation method of semiconductor device and semiconductor integrated device
KR940001313A (en) How to remove small pocket
KR980005426A (en) Electrode Formation Method of Semiconductor Device
KR960022712A (en) Polysilicon Deglaze Method

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application