KR900002423A - Source region and capacitor surface region formation method of semiconductor device and semiconductor integrated device - Google Patents

Abstract

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Description

Source region and capacitor surface region formation method of semiconductor device and semiconductor integrated device

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1A to 2B are diagrams for explaining a method for forming a source region and a capacitor surface region or an electrode region of the present invention, and FIG. 1A shows an epitaxial growth layer formed on an N ⁺ substrate to explain the present invention. A cross-sectional view of a state in which a photoresist layer is coated after the mask layer is formed thereon. FIG. 1B is a cross-sectional view of a portion of the photoresist layer removed from FIG. 1A. FIG. FIG. 1C is a cross-sectional view of a mask pattern formed in FIG. 1B and a photoresist layer on the mask layer removed.

FIG. 2A is a cross sectional view showing a process of forming the trench of FIG. 1C, depositing dope oxide, and then performing high heat treatment. FIG. FIG. 2B is a cross-sectional view of a state in which a doped region is formed inside the trench structure after the heat treatment process of FIG.

3 is a cross-sectional view of an embodiment of the present invention in which a doped source region is formed by forming a trench structure on an N ⁺ substrate so as to overlap an epitaxial growth layer.

Claims (3)

In the method of forming a source region of a semiconductor high-density device of mega D RAM or more, an epitaxial growth layer is formed on an N ⁺ (or P ⁺ ) substrate, an oxide layer is deposited thereon, and a nitride layer is doped thereon to form a mask layer. Next, a process of coating the photoresist, removing a portion of the photoresist to etch the exposed mask layer to the epitaxial surface to form a mask pattern and to remove the remaining photoresist layer and the mask pattern forming process Forming a trench structure on the epitaxial layer formed on the epitaxial layer 7, and depositing a dope oxide to a predetermined thickness and then performing high heat treatment to inject the material into the epitaxial growth layer. Doping techniques comprising forming a region and removing the deposited material by etching. Source region formation method of a semiconductor device using. A semiconductor integrated device, comprising: a trench capacitor having a source region serving as a doping region in the entire trench inner wall by forming a mask pattern on the epitaxial growth layer and forming a trench structure. The trench structure of claim 2, wherein the trench structure includes an epitaxial growth layer, and the trench structure includes a trench capacitor configured to have a source region doped on the left and right sides and a bottom of the trench structure overlapped with an upper portion of the substrate by a dope oxide deposition process. A semiconductor integrated device. ※ Note: The disclosure is based on the initial application.