KR950006909A - Field emission cathode and preparation method thereof - Google Patents

Field emission cathode and preparation method thereof Download PDF

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Publication number
KR950006909A
KR950006909A KR1019930017319A KR930017319A KR950006909A KR 950006909 A KR950006909 A KR 950006909A KR 1019930017319 A KR1019930017319 A KR 1019930017319A KR 930017319 A KR930017319 A KR 930017319A KR 950006909 A KR950006909 A KR 950006909A
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KR
South Korea
Prior art keywords
gate electrode
field emission
gate
protective layer
emission cathode
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KR1019930017319A
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Korean (ko)
Inventor
이천규
Original Assignee
박경팔
삼성전관 주식회사
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Publication date
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Priority to KR1019930017319A priority Critical patent/KR950006909A/en
Publication of KR950006909A publication Critical patent/KR950006909A/en

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Abstract

본 발명은 전계방출 캐소드 및 이의 제조방법에 관한 것으로, 좀더 상세하게는 기저 전극(11)상에 게이트 절연층(12) 및 게이트 전극(13)을 차례로 적층하고 포토리소그래피 공정으로 게이트 호울(15)을 형성시킨 후, 상기 호울부분의 게이트 전극 및 게이트 절연층을 에칭시키는 단계；PECVD법을 사용하여 보호층(16)을 증착시킨 다음 비등방성 에침을 수행하여 기저 전극(11) 및 게이트 전극(13)상의 보호층을 제거하는 단계;E-빔 증착기를 사용하여 게이트 전극상에 분리층(17)을 형성시킨 후 팁(14)을 중착시키는 단체；그후 분리층(17)을 에칭시켜 게이트 전극상의 팁물질을 제거하여 전계방출 캐소드를 제거하는 단계；상기 전계방출 캐소드를 진공실내에 위치시킨 후 Cs증기를 주입하여 코팅시키는 단계； 및 상기 캐소드를 꺼낸 후 습식에칭을 수행하여 보호층 및 보호층상의 Cs막을 제거하는 단계로 이루어짐으로써 궁극적으로 게이트 절연층에는 보호층이 형성되기 때문에 게이트 전극과 기저 전극간의 누설전류를 ~1pA 이하로 줄일 수 있는 잇점이 있는 전계방출 캐소드 및 이의 제조방법에 관한 것이다.The present invention relates to a field emission cathode and a method for manufacturing the same, and more particularly, the gate insulating layer 12 and the gate electrode 13 are sequentially stacked on the base electrode 11 and the gate hole 15 is formed by a photolithography process. Etching the gate electrode and the gate insulating layer in the hole portion; depositing the protective layer 16 using PECVD and then performing anisotropic etching to obtain the base electrode 11 and the gate electrode 13. Removing the protective layer on the gate electrode; forming a separation layer 17 on the gate electrode using an E-beam evaporator, and then neutralizing the tip 14; and then etching the separation layer 17 onto the gate electrode. Removing the tip material to remove the field emission cathode; placing the field emission cathode in a vacuum chamber and injecting Cs vapor to coat the coating; and removing the cathode and performing wet etching to protect the field emission cathode. And removing the Cs film on the protective layer, thereby forming a protective layer on the gate insulating layer, thereby reducing the leakage current between the gate electrode and the base electrode to ˜1 pA or less. It is about.

Description

전계방출 캐소드 및 이의 제조방법Field emission cathode and preparation method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 전계방출 캐소드의 단면도이며,2 is a cross-sectional view of the field emission cathode of the present invention,

제3도는 본 발명의 전계방출 캐소드의 제조공정도이고,3 is a manufacturing process diagram of the field emission cathode of the present invention,

제4도는 본 발명의 전계방출 캐소드의 코팅장치를 나타낸 도면이다.4 is a view showing the coating device of the field emission cathode of the present invention.

Claims (3)

a) 기저 전극(11)상에 게이트 절연층(12) 및 게이트 전극(13)을 차례로 적층하고 포토리소그래피 공정으로 게이트 호울(15)을 형성시킨후, 상기 호울부분의 게이트 전극 및 게이트 절연층을 에칭시키는 단계, b) PECVD법을 사용하여 보호층(16)을 증착시킨 다음 비등방성 에칭을 수행하여 기저전극(11) 및 게이트 전극(13)상의 보호층을 제거하는 단계；c) E-빔 증착기를 사용하여 게이트 전극상에 분리층(17)을 형성시킨 후 팁(14)을 증착시키는 단계；d) 분리층(17)을 에칭시켜 게이트 전극상의 팁물질을 제거하여 전계방출 캐소드를 제조하는 단계；e) 상기 전계방출 캐소드를 진공실내에 위치시킨후 Cs증기를 주입하여 코팅시키는 단계； 및 f) 상기 캐소드를 꺼낸후 습식에칭을 수행하여 보호층 및 보호층상의 Cs막을 제거하는 단계로 이루어짐을 특징으로 하는 전계방출 캐소드의 제조방법.a) the gate insulating layer 12 and the gate electrode 13 are sequentially stacked on the base electrode 11 and a gate hole 15 is formed by a photolithography process, and then the gate electrode and the gate insulating layer of the hole portion are removed. Etching, b) depositing a protective layer 16 using PECVD followed by anisotropic etching to remove the protective layer on the base electrode 11 and the gate electrode 13; c) an E-beam Forming a separation layer 17 on the gate electrode using a vapor deposition machine, and then depositing a tip 14; d) etching the separation layer 17 to remove the tip material on the gate electrode to produce a field emission cathode. Step; e) placing the field emission cathode in a vacuum chamber and injecting Cs vapor to coat; and f) removing the cathode and performing wet etching to remove the protective layer and the Cs film on the protective layer. Electric field characterized by Method for preparing the emission cathode. 기저 전극(11) 또는 기판상에 전계방출 팁(14)이 형성되어 있고, 그 주위에 상기 팁(14)과의 일정거리를 두고 게이트 절연층(12) 및 게이트 전극(13)이 형성되어 있는 전계방출 캐소드에서, 게이트 호울(15)내의 게이트 절연층(12) 벽에 보호층(16)이 형성된 것을 특징으로 하는 전계방출 캐소드.The field emission tip 14 is formed on the base electrode 11 or the substrate, and the gate insulating layer 12 and the gate electrode 13 are formed around the base 14 at a predetermined distance from the tip 14. A field emission cathode, characterized in that a protective layer (16) is formed on the wall of the gate insulating layer (12) in the gate hole (15). 제2항에 있어서, 상기 보호층 물질이 PSG 또는 SiN4임을 특징으로 하는 전계방출 캐소드.3. The field emission cathode of claim 2 wherein the protective layer material is PSG or SiN 4 . ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930017319A 1993-08-31 1993-08-31 Field emission cathode and preparation method thereof KR950006909A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100279749B1 (en) * 1997-12-23 2001-03-02 정선종 Manufacturing method of field emission array superimposed gate and emitter
KR100325074B1 (en) * 1998-10-29 2002-06-26 주식회사 현대 디스플레이 테크놀로지 Field emission display device and manufacturing method
US9064670B2 (en) 2012-03-02 2015-06-23 Samsung Electronics Co., Ltd. Electron emission device and X-ray generator including the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100279749B1 (en) * 1997-12-23 2001-03-02 정선종 Manufacturing method of field emission array superimposed gate and emitter
KR100325074B1 (en) * 1998-10-29 2002-06-26 주식회사 현대 디스플레이 테크놀로지 Field emission display device and manufacturing method
US9064670B2 (en) 2012-03-02 2015-06-23 Samsung Electronics Co., Ltd. Electron emission device and X-ray generator including the same

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