KR960042812A - Method of manufacturing field emitter of display device for field emission by isotropic dry etching method - Google Patents

Method of manufacturing field emitter of display device for field emission by isotropic dry etching method Download PDF

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Publication number
KR960042812A
KR960042812A KR1019950012730A KR19950012730A KR960042812A KR 960042812 A KR960042812 A KR 960042812A KR 1019950012730 A KR1019950012730 A KR 1019950012730A KR 19950012730 A KR19950012730 A KR 19950012730A KR 960042812 A KR960042812 A KR 960042812A
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KR
South Korea
Prior art keywords
display device
etching
emitter
field
dry etching
Prior art date
Application number
KR1019950012730A
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Korean (ko)
Inventor
최영환
Original Assignee
김준성
사단법인 고등기술연구원 연구조합
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김준성, 사단법인 고등기술연구원 연구조합 filed Critical 김준성
Priority to KR1019950012730A priority Critical patent/KR960042812A/en
Publication of KR960042812A publication Critical patent/KR960042812A/en

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Abstract

등방성 건식식각법을 이용하여 전계방출용 표시소자의 필드에미터를 제조하는 방법에 있어서, 방법을 단순화시키며 소자 제작방법 시간을 단축시키기 위해, 실리콘층을 식각하는데 있어, 등방성식각법만을 사용하여 식각공정을 실시하고, 열처리에 의한 실리콘 산화막과 샤프닝 산화막을 형성하지 않음으로써 전계방출용 표시소자의 필드에미터를 제조하는데 소요되는 시간을 단축시킬 수 있고, 열처리에 의한 팁 에미터의 손상을 방지할 수 있다.In the method of manufacturing a field emitter of a field emission display device using an isotropic dry etching method, in order to simplify the method and shorten the time required to fabricate the device, in etching the silicon layer, only the isotropic etching method is used for etching. By performing the process and not forming the silicon oxide film and the sharpening oxide film by the heat treatment, it is possible to shorten the time required to manufacture the field emitter of the field emission display device, and to prevent the damage of the tip emitter by the heat treatment. Can be.

Description

등방성 건식식각법에 의한 전계방출용 표시소자의 필드에미터 제조방법Method of manufacturing field emitter of display device for field emission by isotropic dry etching method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3A도 내지 3E도는 본 발명에 따른 산화막을 형성하지 않고 등방성 건식식각법만을 사용한 필드 에미터의 제작공정을 순차적으로 나타낸 정단면도.3A to 3E are sectional views sequentially showing a manufacturing process of a field emitter using only an isotropic dry etching method without forming an oxide film according to the present invention.

Claims (2)

실리콘 기판 상부에 감광막(Photoresist)를 형성하는 단계와, 상기 감광막을 사진식각공정을 이용하여 마스크 패턴을 형성하는 단계와, 상기 마스크 패턴 하부의 실리콘 기판을 등방성 건식 식각법만을 사용하여 식각하는 단계와, 상기 실리콘 기판 상부에 절연체와 게이트 전극을 순차적으로 증착하는 단계와, 상기 감광막의 마스크 패턴을 식각한 후, 실리콘을 과도하게 식각하여 팁 에미터를 형성하는 단계를 포함하는 전계방출용 표시소자의 필드에미터 제조방법.Forming a photoresist on the silicon substrate, forming a mask pattern on the photoresist using a photolithography process, and etching the silicon substrate under the mask pattern using only an isotropic dry etching method; And sequentially depositing an insulator and a gate electrode on the silicon substrate, and etching the mask pattern of the photoresist layer, followed by excessively etching silicon to form a tip emitter. Field emitter manufacturing method. 제1항에 있어서, 상기 절연체와 게이트 전극을 증착법을 이용하여 형성하는 단계에서, 전자빔 증착법, 열 증착법, 스퍼터링(sputtering)증착법, 또는 PECVD법을 사용하는 것을 특징으로 하는 전계방출용 표시소자의 필드에미터 제조방법.The field of the field emission display device according to claim 1, wherein the insulator and the gate electrode are formed by a deposition method, using an electron beam deposition method, a thermal deposition method, a sputtering deposition method, or a PECVD method. Emitter manufacturing method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950012730A 1995-05-22 1995-05-22 Method of manufacturing field emitter of display device for field emission by isotropic dry etching method KR960042812A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950012730A KR960042812A (en) 1995-05-22 1995-05-22 Method of manufacturing field emitter of display device for field emission by isotropic dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950012730A KR960042812A (en) 1995-05-22 1995-05-22 Method of manufacturing field emitter of display device for field emission by isotropic dry etching method

Publications (1)

Publication Number Publication Date
KR960042812A true KR960042812A (en) 1996-12-21

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Application Number Title Priority Date Filing Date
KR1019950012730A KR960042812A (en) 1995-05-22 1995-05-22 Method of manufacturing field emitter of display device for field emission by isotropic dry etching method

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000045293A (en) * 1998-12-30 2000-07-15 김영환 Method for manufacturing field emission display device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000045293A (en) * 1998-12-30 2000-07-15 김영환 Method for manufacturing field emission display device

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