KR960042929A - Semiconductor device including SOI structure and manufacturing method thereof - Google Patents

Abstract

A method of manufacturing a semiconductor including a silicon-on insulator (SOI) structure is disclosed. A semiconductor device comprising an active region and an inactive region in a silicon substrate, wherein only a part of the active region has an SOI structure, and the remaining active region is formed in the silicon substrate. The active region formed on the silicon substrate of the semiconductor device having such a structure may include a device having an excellent current driving capability, so that the semiconductor device according to the present invention has the advantages of the SOI structure and excellent current driving capability.

Description

Semiconductor device including SOI structure and manufacturing method thereof

As this is a public information case, the full text was not included.

3A to 3E are cross-sectional views illustrating a method of manufacturing a semiconductor device including an active region of an SOI structure in accordance with the present invention. 4A is a plan view showing a portion of an active region of the SOI structure, and FIG. 4B is a cross-sectional view taken along line AA ′ of FIG. 4A.

Claims (6)

Forming an oxide film on an entire surface of the semiconductor substrate including an active region and an inactive region; Depositing a silicon film on the silicon oxide film; Heat treating the silicon film to crystallize to form a single crystal silicon layer; Etching the single crystal silicon layer in a portion of the semiconductor substrate to form an active region to form a single crystal silicon layer pattern; Depositing a silicon nitride film on the entire surface of the single crystal silicon layer pattern; Etching the silicon nitride film in the inactive region to form a silicon nitride film pattern; Forming an oxide film on the inactive region; Removing the silicon nitride film pattern; And etching the silicon oxide film exposed to the air to form a field oxide film. The method of manufacturing a semiconductor device according to claim 1, wherein said silocon film is formed of polycrystalline silicon. The method of manufacturing a semiconductor device according to claim 1, further comprising forming an opening for exposing the semiconductor substrate to the silicon oxide film after the forming of the silicon oxide film. Forming an oxide film on an entire surface of the semiconductor substrate including an active region and an inactive region; Depositing a silicon film on the silicon oxide film; Forming a silicon film pattern by etching the silicon film in a portion forming an active region on the semiconductor substrate; Heat treating the silicon film pattern to crystallize to form a single crystal silicon layer pattern; Depositing a silicon nitride film on the entire surface of the single crystal silicon layer pattern; Etching the silicon nitride film in the inactive region to form a silicon nitride film pattern; Forming an oxide film in the inactive region; Removing the silicon nitride film pattern; And etching the silicon oxide film exposed to the air to form a field oxide film. The method of manufacturing a semiconductor device according to claim 4, wherein said silicon film is formed of polycrystalline silicon. The method of manufacturing a semiconductor device according to claim 4, further comprising forming an opening for exposing the semiconductor substrate in the silicon oxide film after the forming of the silicon oxide film. ※ Note: The disclosure is based on the initial application.