KR960026555A - Method of forming device isolation layer of semiconductor device - Google Patents
Method of forming device isolation layer of semiconductor device Download PDFInfo
- Publication number
- KR960026555A KR960026555A KR1019940035433A KR19940035433A KR960026555A KR 960026555 A KR960026555 A KR 960026555A KR 1019940035433 A KR1019940035433 A KR 1019940035433A KR 19940035433 A KR19940035433 A KR 19940035433A KR 960026555 A KR960026555 A KR 960026555A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- forming
- mask pattern
- device isolation
- isolation layer
- Prior art date
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- Local Oxidation Of Silicon (AREA)
Abstract
본 발명은 소자분리층 형성방법에 있어서, 반도체기판(11) 상부에 스트래스 방지층(12), 완충층(13), 제1산화방지층(14)을 포함하는 소자분리층 형성을 위한 마스크 패턴을 형성하는 제1단계; 상기 마스크 패턴 표면에 제2산화방지층(15)을 형성하는 제2단계; 산화공정을 수행하는 제3단계를 포함하는 것을 특징으로 하여, 버드빅을 최소화시킴으로써 큰 셀영역을 확보할 수 있는 특유의 효과가 있는 반도체 소자의 소자분리층 형성방법에 관한 것이다.In the method of forming a device isolation layer, a mask pattern for forming a device isolation layer including an anti-stress layer 12, a buffer layer 13, and a first antioxidant layer 14 is formed on a semiconductor substrate 11. First step; Forming a second antioxidant layer 15 on the mask pattern surface; And a third step of performing an oxidation process. The present invention relates to a method of forming a device isolation layer of a semiconductor device having a unique effect of securing a large cell region by minimizing budic.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2A도 및 제2B도는 본 발명의 일실시예에 따른 필드산화층 형성과정을 도시한 공정 단면도.2A and 2B are cross-sectional views illustrating a process of forming a field oxide layer according to an embodiment of the present invention.
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940035433A KR960026555A (en) | 1994-12-20 | 1994-12-20 | Method of forming device isolation layer of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940035433A KR960026555A (en) | 1994-12-20 | 1994-12-20 | Method of forming device isolation layer of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960026555A true KR960026555A (en) | 1996-07-22 |
Family
ID=66688203
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940035433A KR960026555A (en) | 1994-12-20 | 1994-12-20 | Method of forming device isolation layer of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960026555A (en) |
-
1994
- 1994-12-20 KR KR1019940035433A patent/KR960026555A/en not_active Application Discontinuation
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Legal Events
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |