KR960026555A - Method of forming device isolation layer of semiconductor device - Google Patents

Method of forming device isolation layer of semiconductor device Download PDF

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Publication number
KR960026555A
KR960026555A KR1019940035433A KR19940035433A KR960026555A KR 960026555 A KR960026555 A KR 960026555A KR 1019940035433 A KR1019940035433 A KR 1019940035433A KR 19940035433 A KR19940035433 A KR 19940035433A KR 960026555 A KR960026555 A KR 960026555A
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KR
South Korea
Prior art keywords
layer
forming
mask pattern
device isolation
isolation layer
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KR1019940035433A
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Korean (ko)
Inventor
엄금용
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019940035433A priority Critical patent/KR960026555A/en
Publication of KR960026555A publication Critical patent/KR960026555A/en

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Abstract

본 발명은 소자분리층 형성방법에 있어서, 반도체기판(11) 상부에 스트래스 방지층(12), 완충층(13), 제1산화방지층(14)을 포함하는 소자분리층 형성을 위한 마스크 패턴을 형성하는 제1단계; 상기 마스크 패턴 표면에 제2산화방지층(15)을 형성하는 제2단계; 산화공정을 수행하는 제3단계를 포함하는 것을 특징으로 하여, 버드빅을 최소화시킴으로써 큰 셀영역을 확보할 수 있는 특유의 효과가 있는 반도체 소자의 소자분리층 형성방법에 관한 것이다.In the method of forming a device isolation layer, a mask pattern for forming a device isolation layer including an anti-stress layer 12, a buffer layer 13, and a first antioxidant layer 14 is formed on a semiconductor substrate 11. First step; Forming a second antioxidant layer 15 on the mask pattern surface; And a third step of performing an oxidation process. The present invention relates to a method of forming a device isolation layer of a semiconductor device having a unique effect of securing a large cell region by minimizing budic.

Description

반도체 소자의 소자분리층 형성방법Method of forming device isolation layer of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A도 및 제2B도는 본 발명의 일실시예에 따른 필드산화층 형성과정을 도시한 공정 단면도.2A and 2B are cross-sectional views illustrating a process of forming a field oxide layer according to an embodiment of the present invention.

Claims (8)

소자분리층 형성방법에 있어서, 반도체기판 상부에 스트래스 방지층, 완충층, 제1산화방지층을 포함하는 소자분리층 형성을 위한 마스크 패턴을 형성하는 제1단계; 상기 마스크 패턴 표면에 제2산화방지층을 형성하는 제2단계; 산화공정을 수행하는 제3단계를 포함하는 것을 특징으로 하는 반도체 소자의 소자분리층 형성방법.A device isolation layer forming method comprising: a first step of forming a mask pattern for forming a device isolation layer including an anti-stress layer, a buffer layer, and a first antioxidant layer on a semiconductor substrate; Forming a second antioxidant layer on a surface of the mask pattern; And a third step of performing an oxidation process. 제1항에 있어서, 상기 제1단계에서, 상기 마스크 패턴은 계단형으로 형성한 층을 적어도 하나 가지는 것을 특징으로 하는 반도체 소자의 소자분리층 형성방법.The method of claim 1, wherein in the first step, the mask pattern has at least one layer formed in a step shape. 제2항에 있어서, 상기 계단형으로 형성한 층은 완충층인 것을 특징으로 하는 반도체 소자의 소자분리층 형성방법.The method of claim 2, wherein the stepped layer is a buffer layer. 제3항에 있어서, 상기 완충층은 폴리실리콘층인 것을 특징으로 하는 반도체 소자의 소자분리층 형성방법.The method of claim 3, wherein the buffer layer is a polysilicon layer. 제2항에 있어서, 상기 계단형으로 형성한 층은, 상기 마스크 패턴의 패터닝시나 패턴 형성 후 제거공정을 통해 형성되는 것을 특징으로 하는 반도체 소자의 소자분리층 형성방법.The method of claim 2, wherein the stepped layer is formed by removing the mask pattern during patterning or after the pattern is formed. 제2항에 있어서, 상기 제2단계에서, 상기 제2산화방지층은 상기 마스크 패턴중 계단형 층을 채우며 형성되는 것을 특징으로 하는 반도체 소자의 소자분리층 형성방법.The method of claim 2, wherein in the second step, the second antioxidant layer is formed by filling a stepped layer of the mask pattern. 제1항에 있어서, 상기 제2산화방지층은 적어도 나이트라이드층을 갖는 것을 특징으로 하는 반도체 소자의 소자분리층 형성방법.The method of claim 1, wherein the second antioxidant layer has at least a nitride layer. 제7항에 있어서, 상기 나이트라이드층은, 300 내지 500Å의 두께로 형성되는 것을 특징으로 하는 반도체 소자의 소자분리층 형성방법.8. The method of claim 7, wherein the nitride layer is formed to a thickness of 300 to 500 kPa. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940035433A 1994-12-20 1994-12-20 Method of forming device isolation layer of semiconductor device KR960026555A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940035433A KR960026555A (en) 1994-12-20 1994-12-20 Method of forming device isolation layer of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940035433A KR960026555A (en) 1994-12-20 1994-12-20 Method of forming device isolation layer of semiconductor device

Publications (1)

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KR960026555A true KR960026555A (en) 1996-07-22

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KR1019940035433A KR960026555A (en) 1994-12-20 1994-12-20 Method of forming device isolation layer of semiconductor device

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KR (1) KR960026555A (en)

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