KR940009767A - Field oxide film formation method of a semiconductor device - Google Patents

Field oxide film formation method of a semiconductor device Download PDF

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Publication number
KR940009767A
KR940009767A KR1019920019683A KR920019683A KR940009767A KR 940009767 A KR940009767 A KR 940009767A KR 1019920019683 A KR1019920019683 A KR 1019920019683A KR 920019683 A KR920019683 A KR 920019683A KR 940009767 A KR940009767 A KR 940009767A
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KR
South Korea
Prior art keywords
film
oxide film
field oxide
semiconductor device
forming
Prior art date
Application number
KR1019920019683A
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Korean (ko)
Inventor
이경미
장세억
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority to KR1019920019683A priority Critical patent/KR940009767A/en
Publication of KR940009767A publication Critical patent/KR940009767A/en

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  • Local Oxidation Of Silicon (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

본 발명은 반도체 소자의 필드 산화막 형성 방법에 관한 것으로, 반도체 기판(1)에 스트레스 완충 역할을 하는 패드 산화막(2)을 증착하고 300내지 1000Å두께의 폴리실리콘막(3)을 증착하는 제1단계, 상기 제1단계 후에 질화막(4), 감광막(5)을 차례로 증착하고 상기 감광막(5)을 사용하여 필드산화막(6a,6b) 형성부위를 소정의 크기로 패턴한 다음에 상기 감광막(5)을 이용하여 상기 질화막(4)을 소정의 크기로 식각하고 상기 감광막(5)을 제거하여 900내지 1000℃에서 습식 산화법으로 필드산화막(6b)을 형성하는 제2단계를 특징으로 하는 반도체 소자의 필드 산화막 형성 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a field oxide film of a semiconductor device, the method comprising: depositing a pad oxide film 2 that acts as a buffer for stress on a semiconductor substrate 1 and depositing a polysilicon film 3 having a thickness of 300 to 1000 占 Å After the first step, the nitride film 4 and the photoresist film 5 are sequentially deposited, and the photoresist film 5 is patterned by forming a field oxide film 6a and 6b to a predetermined size using the photoresist film 5. A field of a semiconductor device, characterized in that the nitride film 4 is etched to a predetermined size and the photoresist film 5 is removed to form the field oxide film 6b by wet oxidation at 900 to 1000 ° C. It relates to an oxide film forming method.

Description

반도체 소자의 필드 산화막 형성 방법Field oxide film formation method of a semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 일실시예에 따른 필드 산화막 제조 공정도,1 is a field oxide film production process according to an embodiment of the present invention,

제2도는 본 발명의 다른 실시예에 따른 필드 산화막 형성도,2 is a field oxide film formation diagram according to another embodiment of the present invention,

제3도는 본 발명의 또 다른 실시예에 따른 필드 산화막 형성도3 is a field oxide film formation diagram according to another embodiment of the present invention

Claims (2)

반도체 소자의 필드 산화막 형성방법에 있어서, 반도체 기판(1)에 스트레스 완충 역할을 하는 패드 산화막(2)을 증착하고 300내지 1000Å두께의 폴리실리콘막(3)을 증착하는 제1단계, 상기 제1단계 후에 질화막(4), 감광막(5)을 차례로 증착하고 상기 감광막(5)을 사용하여 필드산화막(6a,6b) 형성부위를 소정의 크기로 패턴한 다음에 상기 감광막(5)을 이용하여 상기 질화막(4)을 소정의 크기로 식각하고 상기 감광막(5)을 제거하여 900내지 1000℃에서 습식 산화법으로 필드산화막(6b)을 형성하는 제2단계를 구비하여 이루어지는 것을 특징으로 하는 반도체 소자의 필드 산화막 형성 방법.1. A method of forming a field oxide film of a semiconductor device, the method comprising: depositing a pad oxide film 2 that acts as a buffer for stress in a semiconductor substrate 1, and depositing a polysilicon film 3 having a thickness of 300 to 1000 Å and a first step; After the step, the nitride film 4 and the photosensitive film 5 are sequentially deposited, and the field oxide films 6a and 6b are formed in a predetermined size using the photosensitive film 5, and then the photosensitive film 5 is used. And a second step of etching the nitride film 4 to a predetermined size and removing the photoresist film 5 to form the field oxide film 6b by a wet oxidation method at 900 to 1000 ° C. Oxide film formation method. 제1항에 있어서, 상기 필드산화막(6b) 형성 공정 온도가 1100℃일 때 상기 제1단계의 폴리실리콘막(3)의 두께가 200 내지 500Å인 것을 특징으로 하는 반도체 소자의 필드 산화막 형성 방법.The method of forming a field oxide film of a semiconductor device according to claim 1, wherein the thickness of said polysilicon film (3) of said first step is 200 to 500 kPa when the process temperature of said field oxide film (6b) formation is 1100 degreeC. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920019683A 1992-10-24 1992-10-24 Field oxide film formation method of a semiconductor device KR940009767A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920019683A KR940009767A (en) 1992-10-24 1992-10-24 Field oxide film formation method of a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920019683A KR940009767A (en) 1992-10-24 1992-10-24 Field oxide film formation method of a semiconductor device

Publications (1)

Publication Number Publication Date
KR940009767A true KR940009767A (en) 1994-05-24

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920019683A KR940009767A (en) 1992-10-24 1992-10-24 Field oxide film formation method of a semiconductor device

Country Status (1)

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KR (1) KR940009767A (en)

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