KR940009767A - Field oxide film formation method of a semiconductor device - Google Patents
Field oxide film formation method of a semiconductor device Download PDFInfo
- Publication number
- KR940009767A KR940009767A KR1019920019683A KR920019683A KR940009767A KR 940009767 A KR940009767 A KR 940009767A KR 1019920019683 A KR1019920019683 A KR 1019920019683A KR 920019683 A KR920019683 A KR 920019683A KR 940009767 A KR940009767 A KR 940009767A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- oxide film
- field oxide
- semiconductor device
- forming
- Prior art date
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- Local Oxidation Of Silicon (AREA)
- Formation Of Insulating Films (AREA)
Abstract
본 발명은 반도체 소자의 필드 산화막 형성 방법에 관한 것으로, 반도체 기판(1)에 스트레스 완충 역할을 하는 패드 산화막(2)을 증착하고 300내지 1000Å두께의 폴리실리콘막(3)을 증착하는 제1단계, 상기 제1단계 후에 질화막(4), 감광막(5)을 차례로 증착하고 상기 감광막(5)을 사용하여 필드산화막(6a,6b) 형성부위를 소정의 크기로 패턴한 다음에 상기 감광막(5)을 이용하여 상기 질화막(4)을 소정의 크기로 식각하고 상기 감광막(5)을 제거하여 900내지 1000℃에서 습식 산화법으로 필드산화막(6b)을 형성하는 제2단계를 특징으로 하는 반도체 소자의 필드 산화막 형성 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a field oxide film of a semiconductor device, the method comprising: depositing a pad oxide film 2 that acts as a buffer for stress on a semiconductor substrate 1 and depositing a polysilicon film 3 having a thickness of 300 to 1000 占 Å After the first step, the nitride film 4 and the photoresist film 5 are sequentially deposited, and the photoresist film 5 is patterned by forming a field oxide film 6a and 6b to a predetermined size using the photoresist film 5. A field of a semiconductor device, characterized in that the nitride film 4 is etched to a predetermined size and the photoresist film 5 is removed to form the field oxide film 6b by wet oxidation at 900 to 1000 ° C. It relates to an oxide film forming method.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도는 본 발명의 일실시예에 따른 필드 산화막 제조 공정도,1 is a field oxide film production process according to an embodiment of the present invention,
제2도는 본 발명의 다른 실시예에 따른 필드 산화막 형성도,2 is a field oxide film formation diagram according to another embodiment of the present invention,
제3도는 본 발명의 또 다른 실시예에 따른 필드 산화막 형성도3 is a field oxide film formation diagram according to another embodiment of the present invention
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920019683A KR940009767A (en) | 1992-10-24 | 1992-10-24 | Field oxide film formation method of a semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920019683A KR940009767A (en) | 1992-10-24 | 1992-10-24 | Field oxide film formation method of a semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR940009767A true KR940009767A (en) | 1994-05-24 |
Family
ID=67210100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920019683A KR940009767A (en) | 1992-10-24 | 1992-10-24 | Field oxide film formation method of a semiconductor device |
Country Status (1)
Country | Link |
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KR (1) | KR940009767A (en) |
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1992
- 1992-10-24 KR KR1019920019683A patent/KR940009767A/en not_active Application Discontinuation
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