KR930015015A - 강유전성 캐패시터를 갖는 메모리 셀 - Google Patents

강유전성 캐패시터를 갖는 메모리 셀 Download PDF

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Publication number
KR930015015A
KR930015015A KR1019920024853A KR920024853A KR930015015A KR 930015015 A KR930015015 A KR 930015015A KR 1019920024853 A KR1019920024853 A KR 1019920024853A KR 920024853 A KR920024853 A KR 920024853A KR 930015015 A KR930015015 A KR 930015015A
Authority
KR
South Korea
Prior art keywords
transistor
coupled
pole
voltage source
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019920024853A
Other languages
English (en)
Korean (ko)
Inventor
에이취. 샤 아스윈
Original Assignee
윌리엄 이. 힐러
텍사스 인스트루먼츠 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윌리엄 이. 힐러, 텍사스 인스트루먼츠 인코포레이티드 filed Critical 윌리엄 이. 힐러
Publication of KR930015015A publication Critical patent/KR930015015A/ko
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/0072—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a ferroelectric element

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
KR1019920024853A 1991-12-20 1992-12-19 강유전성 캐패시터를 갖는 메모리 셀 Ceased KR930015015A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US81097591A 1991-12-20 1991-12-20
US810,975 1991-12-20

Publications (1)

Publication Number Publication Date
KR930015015A true KR930015015A (ko) 1993-07-23

Family

ID=25205196

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920024853A Ceased KR930015015A (ko) 1991-12-20 1992-12-19 강유전성 캐패시터를 갖는 메모리 셀

Country Status (4)

Country Link
EP (1) EP0551756A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPH05266671A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR930015015A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW221537B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100476483B1 (ko) * 1995-11-02 2005-06-23 프리스케일 세미컨덕터, 인크. 비휘발성레지스터,데이타기록방법및데이타판독방법

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5487030A (en) * 1994-08-26 1996-01-23 Hughes Aircraft Company Ferroelectric interruptible read memory
US5729488A (en) * 1994-08-26 1998-03-17 Hughes Electronics Non-destructive read ferroelectric memory cell utilizing the ramer-drab effect
JP3186485B2 (ja) * 1995-01-04 2001-07-11 日本電気株式会社 強誘電体メモリ装置およびその動作制御方法
KR19980027519A (ko) * 1996-10-16 1998-07-15 김광호 열전하 방출 회로를 갖는 강유전체 랜덤 액세서 메모리
US6038163A (en) * 1998-11-09 2000-03-14 Lucent Technologies Inc. Capacitor loaded memory cell
FR2793939B1 (fr) * 1999-05-19 2004-01-02 St Microelectronics Sa Cellule memoire a faible consommation
US6980459B2 (en) 2002-10-24 2005-12-27 Texas Instruments Incorporated Non-volatile SRAM

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4091460A (en) * 1976-10-05 1978-05-23 The United States Of America As Represented By The Secretary Of The Air Force Quasi static, virtually nonvolatile random access memory cell
JPS5372429A (en) * 1976-12-09 1978-06-27 Toshiba Corp Non-volatile semiconductor memory unit
US4809225A (en) * 1987-07-02 1989-02-28 Ramtron Corporation Memory cell with volatile and non-volatile portions having ferroelectric capacitors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100476483B1 (ko) * 1995-11-02 2005-06-23 프리스케일 세미컨덕터, 인크. 비휘발성레지스터,데이타기록방법및데이타판독방법

Also Published As

Publication number Publication date
EP0551756A1 (en) 1993-07-21
JPH05266671A (ja) 1993-10-15
TW221537B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1994-03-01

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PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19921219

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A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19971219

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 19921219

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20000428

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20010419

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20000428

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I