FR2793939B1 - Cellule memoire a faible consommation - Google Patents

Cellule memoire a faible consommation

Info

Publication number
FR2793939B1
FR2793939B1 FR9906590A FR9906590A FR2793939B1 FR 2793939 B1 FR2793939 B1 FR 2793939B1 FR 9906590 A FR9906590 A FR 9906590A FR 9906590 A FR9906590 A FR 9906590A FR 2793939 B1 FR2793939 B1 FR 2793939B1
Authority
FR
France
Prior art keywords
memory cell
low consumption
consumption memory
low
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9906590A
Other languages
English (en)
Other versions
FR2793939A1 (fr
Inventor
Richard Ferrant
Joseph Borel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR9906590A priority Critical patent/FR2793939B1/fr
Publication of FR2793939A1 publication Critical patent/FR2793939A1/fr
Application granted granted Critical
Publication of FR2793939B1 publication Critical patent/FR2793939B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
FR9906590A 1999-05-19 1999-05-19 Cellule memoire a faible consommation Expired - Fee Related FR2793939B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR9906590A FR2793939B1 (fr) 1999-05-19 1999-05-19 Cellule memoire a faible consommation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9906590A FR2793939B1 (fr) 1999-05-19 1999-05-19 Cellule memoire a faible consommation

Publications (2)

Publication Number Publication Date
FR2793939A1 FR2793939A1 (fr) 2000-11-24
FR2793939B1 true FR2793939B1 (fr) 2004-01-02

Family

ID=9545969

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9906590A Expired - Fee Related FR2793939B1 (fr) 1999-05-19 1999-05-19 Cellule memoire a faible consommation

Country Status (1)

Country Link
FR (1) FR2793939B1 (fr)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4536859A (en) * 1981-08-31 1985-08-20 Sharp Kabushiki Kaisha Cross-coupled inverters static random access memory
JPS61127159A (ja) * 1984-11-26 1986-06-14 Nippon Texas Instr Kk スタテイツク形記憶素子
JPH0685431B2 (ja) * 1985-06-10 1994-10-26 株式会社日立製作所 半導体装置
US4984200A (en) * 1987-11-30 1991-01-08 Hitachi, Ltd. Semiconductor circuit device having a plurality of SRAM type memory cell arrangement
KR930015015A (ko) * 1991-12-20 1993-07-23 윌리엄 이. 힐러 강유전성 캐패시터를 갖는 메모리 셀
KR100305123B1 (ko) * 1992-12-11 2001-11-22 비센트 비.인그라시아, 알크 엠 아헨 정적랜덤액세스메모리셀및이를포함하는반도체장치
US5700707A (en) * 1996-06-13 1997-12-23 Chartered Semiconductor Manufacturing Pte Ltd. Method of manufacturing SRAM cell structure having a tunnel oxide capacitor

Also Published As

Publication number Publication date
FR2793939A1 (fr) 2000-11-24

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20080131