TW221537B - - Google Patents

Info

Publication number
TW221537B
TW221537B TW082104329A TW82104329A TW221537B TW 221537 B TW221537 B TW 221537B TW 082104329 A TW082104329 A TW 082104329A TW 82104329 A TW82104329 A TW 82104329A TW 221537 B TW221537 B TW 221537B
Authority
TW
Taiwan
Application number
TW082104329A
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of TW221537B publication Critical patent/TW221537B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/0072—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a ferroelectric element

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
TW082104329A 1991-12-20 1993-06-01 TW221537B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US81097591A 1991-12-20 1991-12-20

Publications (1)

Publication Number Publication Date
TW221537B true TW221537B (zh) 1994-03-01

Family

ID=25205196

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082104329A TW221537B (zh) 1991-12-20 1993-06-01

Country Status (4)

Country Link
EP (1) EP0551756A1 (zh)
JP (1) JPH05266671A (zh)
KR (1) KR930015015A (zh)
TW (1) TW221537B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5729488A (en) * 1994-08-26 1998-03-17 Hughes Electronics Non-destructive read ferroelectric memory cell utilizing the ramer-drab effect
US5487030A (en) * 1994-08-26 1996-01-23 Hughes Aircraft Company Ferroelectric interruptible read memory
JP3186485B2 (ja) * 1995-01-04 2001-07-11 日本電気株式会社 強誘電体メモリ装置およびその動作制御方法
US5592411A (en) * 1995-11-02 1997-01-07 Motorola, Inc. Non-volatile register and method for accessing data therein
KR19980027519A (ko) * 1996-10-16 1998-07-15 김광호 열전하 방출 회로를 갖는 강유전체 랜덤 액세서 메모리
US6038163A (en) * 1998-11-09 2000-03-14 Lucent Technologies Inc. Capacitor loaded memory cell
FR2793939B1 (fr) * 1999-05-19 2004-01-02 St Microelectronics Sa Cellule memoire a faible consommation
US6980459B2 (en) * 2002-10-24 2005-12-27 Texas Instruments Incorporated Non-volatile SRAM

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4091460A (en) * 1976-10-05 1978-05-23 The United States Of America As Represented By The Secretary Of The Air Force Quasi static, virtually nonvolatile random access memory cell
JPS5372429A (en) * 1976-12-09 1978-06-27 Toshiba Corp Non-volatile semiconductor memory unit
US4809225A (en) * 1987-07-02 1989-02-28 Ramtron Corporation Memory cell with volatile and non-volatile portions having ferroelectric capacitors

Also Published As

Publication number Publication date
JPH05266671A (ja) 1993-10-15
KR930015015A (ko) 1993-07-23
EP0551756A1 (en) 1993-07-21

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