JPH05266671A - 強誘電性のコンデンサを備えたメモリセル - Google Patents
強誘電性のコンデンサを備えたメモリセルInfo
- Publication number
- JPH05266671A JPH05266671A JP4361858A JP36185892A JPH05266671A JP H05266671 A JPH05266671 A JP H05266671A JP 4361858 A JP4361858 A JP 4361858A JP 36185892 A JP36185892 A JP 36185892A JP H05266671 A JPH05266671 A JP H05266671A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- memory cell
- voltage
- coupled
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 76
- 238000000034 method Methods 0.000 abstract description 6
- 230000003068 static effect Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 8
- 230000005684 electric field Effects 0.000 description 6
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 108010067216 glycyl-glycyl-glycine Proteins 0.000 description 4
- GZXOHHPYODFEGO-UHFFFAOYSA-N triglycine sulfate Chemical compound NCC(O)=O.NCC(O)=O.NCC(O)=O.OS(O)(=O)=O GZXOHHPYODFEGO-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000006880 cross-coupling reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
- G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
- G11C14/0072—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a ferroelectric element
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US81097591A | 1991-12-20 | 1991-12-20 | |
| US810975 | 1991-12-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05266671A true JPH05266671A (ja) | 1993-10-15 |
Family
ID=25205196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4361858A Pending JPH05266671A (ja) | 1991-12-20 | 1992-12-21 | 強誘電性のコンデンサを備えたメモリセル |
Country Status (4)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19980027519A (ko) * | 1996-10-16 | 1998-07-15 | 김광호 | 열전하 방출 회로를 갖는 강유전체 랜덤 액세서 메모리 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5487030A (en) * | 1994-08-26 | 1996-01-23 | Hughes Aircraft Company | Ferroelectric interruptible read memory |
| US5729488A (en) * | 1994-08-26 | 1998-03-17 | Hughes Electronics | Non-destructive read ferroelectric memory cell utilizing the ramer-drab effect |
| JP3186485B2 (ja) * | 1995-01-04 | 2001-07-11 | 日本電気株式会社 | 強誘電体メモリ装置およびその動作制御方法 |
| US5592411A (en) * | 1995-11-02 | 1997-01-07 | Motorola, Inc. | Non-volatile register and method for accessing data therein |
| US6038163A (en) * | 1998-11-09 | 2000-03-14 | Lucent Technologies Inc. | Capacitor loaded memory cell |
| FR2793939B1 (fr) * | 1999-05-19 | 2004-01-02 | St Microelectronics Sa | Cellule memoire a faible consommation |
| US6980459B2 (en) * | 2002-10-24 | 2005-12-27 | Texas Instruments Incorporated | Non-volatile SRAM |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4091460A (en) * | 1976-10-05 | 1978-05-23 | The United States Of America As Represented By The Secretary Of The Air Force | Quasi static, virtually nonvolatile random access memory cell |
| JPS5372429A (en) * | 1976-12-09 | 1978-06-27 | Toshiba Corp | Non-volatile semiconductor memory unit |
| US4809225A (en) * | 1987-07-02 | 1989-02-28 | Ramtron Corporation | Memory cell with volatile and non-volatile portions having ferroelectric capacitors |
-
1992
- 1992-12-19 KR KR1019920024853A patent/KR930015015A/ko not_active Ceased
- 1992-12-21 EP EP92311672A patent/EP0551756A1/en not_active Withdrawn
- 1992-12-21 JP JP4361858A patent/JPH05266671A/ja active Pending
-
1993
- 1993-06-01 TW TW082104329A patent/TW221537B/zh active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19980027519A (ko) * | 1996-10-16 | 1998-07-15 | 김광호 | 열전하 방출 회로를 갖는 강유전체 랜덤 액세서 메모리 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW221537B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1994-03-01 |
| KR930015015A (ko) | 1993-07-23 |
| EP0551756A1 (en) | 1993-07-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20090303801A1 (en) | Carbon nanotube memory including a buffered data path | |
| US5206533A (en) | Transistor device with resistive coupling | |
| TW459230B (en) | Static RAM having word line driving circuitry shared by all the memory cells provided therein | |
| US4845676A (en) | Non-clocked static memory cell | |
| JPH05266671A (ja) | 強誘電性のコンデンサを備えたメモリセル | |
| KR20000052483A (ko) | 감소된 표면적을 갖는 ｓｒａｍ 메모리 셀 | |
| KR0146075B1 (ko) | 반도체 메모리 셀 | |
| US5384730A (en) | Coincident activation of pass transistors in a random access memory | |
| JPH06104405A (ja) | スタティック型メモリ | |
| JPH0774318A (ja) | 半導体集積回路 | |
| US5781482A (en) | Semiconductor memory device | |
| TWI754278B (zh) | 寫入輔助電路以及建立平衡負位元線電壓的方法 | |
| JPS5855597B2 (ja) | 双安定半導体メモリセル | |
| JPH07302847A (ja) | Ｓｒａｍメモリセル | |
| US4506349A (en) | Cross-coupled transistor memory cell for MOS random access memory of reduced power dissipation | |
| US6314041B1 (en) | Memory with a reduced leakage current | |
| KR100244425B1 (ko) | 메모리 셀 회로 및 그 동작방법 | |
| US9196322B2 (en) | Semiconductor memory device that does not require a sense amplifier | |
| JPH04111297A (ja) | スタティック・ランダム・アクセス・メモリセル | |
| EP0461429A1 (en) | Self-locking load structure for staticram | |
| US5852573A (en) | Polyload sram memory cell with low stanby current | |
| WO2002052572A1 (en) | Static 2t-1c ferroelectric memory | |
| JPH07335838A (ja) | 単一終端電流検出付きの半導体集積回路ｓｒａｍセルアレー | |
| KR100386473B1 (ko) | 삼중의 전원선을 가지는 에스램 | |
| TW212847B (en) | Cells of static memory |