KR930009052A - 안티휴즈를 갖춘 반도체장치 - Google Patents

안티휴즈를 갖춘 반도체장치 Download PDF

Info

Publication number
KR930009052A
KR930009052A KR1019920019609A KR920019609A KR930009052A KR 930009052 A KR930009052 A KR 930009052A KR 1019920019609 A KR1019920019609 A KR 1019920019609A KR 920019609 A KR920019609 A KR 920019609A KR 930009052 A KR930009052 A KR 930009052A
Authority
KR
South Korea
Prior art keywords
layer
layers
electrical
semiconductor
semiconductor device
Prior art date
Application number
KR1019920019609A
Other languages
English (en)
Inventor
다까시 사이키
아키토시 모시주끼
노리히사 스즈끼
Original Assignee
세끼사와 요시
후지쓰 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세끼사와 요시, 후지쓰 가부시끼가이샤 filed Critical 세끼사와 요시
Publication of KR930009052A publication Critical patent/KR930009052A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

안티휴즈를 갖춘 반도체장치에 관하여, 두께나 형상의 균일한 안티휴즈용 비정질실리콘층을 형성하여, 안정한 소정특성의 반도체 회로를 가지는 반도체 장치를 제공한다. 반도체기판 41과 반도체기판위에 형성된 절연층 42와, 그 절연층위에 형성된 하층배선층 43a, 43b와, 하층배선층 43a 위에 형성된 안티휴즈용 비정질 반도체층 45와, 절연층과 비정질 반도체층 위에 형성되고 또한 그 비정질반도체장치에 달하는 콘택트홀을 가지는 층간절연층 50과, 층간절연층위에 형성되고 또한 콘택트홀 52a를 개입하여 비정질 반도체층 45에 접속된 상층배선층 53과로서, 되는 것을 특징으로 하는 안티휴즈를 갖춘 반도체층에 구성한다. 배선층이 알미늄인 경우에, 비정질 반도체층과 하층배선층 ( 및 상층배선층)과의 사이에 바이러층 44(46)이 형성되어 있다.

Description

안티휴즈를 갖춘 반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명의 제1실시태양예에 관계되는 안티휴즈가 붙은 반도체 장치의 제조공정으로 안티휴즈대응부분의 레지스트층을 형성한 때의 개략단면도이다
제4도는 본 발명의 제1실시태양예에 관계되는 안티휴즈가 붙은 반도체 장치의 제조공정으로 선택적 엣칭처리를 하였을 때의 개략단면도이다
제5도는 본 발명의 제1실시태양예에 관계되는 안티휴즈가 붙은 반도체 장치의 제조공정으로 하층 배선층 패터닝를 하였을 때의 개략단면도이다

Claims (5)

  1. 반도체기판(41,61)과, 전기 반도체기판위에 형성된 절연층(42,62)과, 그 절연층위에 형성된 하층배선층(43a, 63)과, 전기 하층배선층위에 형성된 안티휴즈용의 비정질 반도체층(45,65)과, 전기 절연층 및 전기 비정질 반도체층 위에 형성되고 또한 그 비정질반도체층(45,65)에 달하는 콘택트홀을 가지는 층간절연층(50,66)과, 전기 층간절연층위에 형성되고 또한 전기 콘택트홀을 개입하여 전기 비정질반도체층에 접속된 상층배선층(53,72a)과, 로써 되는 것을 특징으로 하는 안티휴즈를 갖춘 반도체장치.
  2. 전기 하층배선층(43a, 63)과 전기 비정질반도체층(45,65)과의 사이에 하층 베리어층(44,64)이 형성되며, 그리고 전기 비정질반도체층(45,65)과 전기 상층배선층(53,72a)과의 사이에 상층베리어층(46,56a,71a,76a)이 형성되어 있는 것을 특징으로 하는 청구항 1기재의 반도체장치.
  3. 전기 상층베리어층(56a,76a)이 전기 콘택트홀의 가운데만에 형성되어 있는 것을 특징으로 하는 청구항 2기재의 반도체장치.
  4. 전기 상층베리어층(71a)이 전기 상층배선층(72a)의 아래에 있어, 전기 층간절연층(50,66)위에 연재하고 있는 것을 특징으로 하는 청구항 2기재의 반도체장치.
  5. 전기 비정질반도체층(45,65)이 비정질실리콘층인 것을 특징으로 하는 청구항 1기재의 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920019609A 1991-10-23 1992-10-23 안티휴즈를 갖춘 반도체장치 KR930009052A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP27582291 1991-10-23
JP91-275822 1991-10-23
JP27582391 1991-10-23
JP91-275823 1991-10-23
JP91-278206 1991-10-25
JP27820691 1991-10-25

Publications (1)

Publication Number Publication Date
KR930009052A true KR930009052A (ko) 1993-05-22

Family

ID=27336296

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920019609A KR930009052A (ko) 1991-10-23 1992-10-23 안티휴즈를 갖춘 반도체장치

Country Status (2)

Country Link
EP (1) EP0539197A1 (ko)
KR (1) KR930009052A (ko)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5272101A (en) * 1990-04-12 1993-12-21 Actel Corporation Electrically programmable antifuse and fabrication processes
US5552627A (en) * 1990-04-12 1996-09-03 Actel Corporation Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayers
US5381035A (en) * 1992-09-23 1995-01-10 Chen; Wenn-Jei Metal-to-metal antifuse including etch stop layer
EP0558176A1 (en) * 1992-02-26 1993-09-01 Actel Corporation Metal-to-metal antifuse with improved diffusion barrier layer
US5308795A (en) * 1992-11-04 1994-05-03 Actel Corporation Above via metal-to-metal antifuse
US5369054A (en) 1993-07-07 1994-11-29 Actel Corporation Circuits for ESD protection of metal-to-metal antifuses during processing
US5498895A (en) * 1993-07-07 1996-03-12 Actel Corporation Process ESD protection devices for use with antifuses
US5581111A (en) * 1993-07-07 1996-12-03 Actel Corporation Dielectric-polysilicon-dielectric antifuse for field programmable logic applications
US5856234A (en) * 1993-09-14 1999-01-05 Actel Corporation Method of fabricating an antifuse
US5485031A (en) 1993-11-22 1996-01-16 Actel Corporation Antifuse structure suitable for VLSI application
EP0660408A1 (en) * 1993-12-16 1995-06-28 United Technologies Corporation A method of manufacturing antifuse devices
US5592016A (en) * 1995-04-14 1997-01-07 Actel Corporation Antifuse with improved antifuse material
JP3027195B2 (ja) 1995-06-02 2000-03-27 アクテル・コーポレイション 隆起タングステンプラグ アンチヒューズ及びその製造方法
US5986322A (en) * 1995-06-06 1999-11-16 Mccollum; John L. Reduced leakage antifuse structure
US5741720A (en) 1995-10-04 1998-04-21 Actel Corporation Method of programming an improved metal-to-metal via-type antifuse
US5909049A (en) 1997-02-11 1999-06-01 Actel Corporation Antifuse programmed PROM cell
US6251710B1 (en) 2000-04-27 2001-06-26 International Business Machines Corporation Method of making a dual damascene anti-fuse with via before wire
DE10030444A1 (de) * 2000-06-22 2002-01-10 Infineon Technologies Ag Verfahren zur Herstellung einer dielektrischen Antifuse-Struktur

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4748490A (en) * 1985-08-01 1988-05-31 Texas Instruments Incorporated Deep polysilicon emitter antifuse memory cell
US4914055A (en) * 1989-08-24 1990-04-03 Advanced Micro Devices, Inc. Semiconductor antifuse structure and method
US5989943A (en) * 1989-09-07 1999-11-23 Quicklogic Corporation Method for fabrication of programmable interconnect structure
US5070384A (en) * 1990-04-12 1991-12-03 Actel Corporation Electrically programmable antifuse element incorporating a dielectric and amorphous silicon interlayer

Also Published As

Publication number Publication date
EP0539197A1 (en) 1993-04-28

Similar Documents

Publication Publication Date Title
KR930009052A (ko) 안티휴즈를 갖춘 반도체장치
US5469981A (en) Electrically blowable fuse structure manufacturing for organic insulators
KR970067775A (ko) 반도체 장치
KR970060496A (ko) 반도체 장치 및 그 제조 방법
KR920018843A (ko) 자기-정합 접점 형성 방법 및 구조
KR970077699A (ko) 투명전극과 패드전극사이 낮은 접촉 저항을 갖는 반도체 장치 및 그 제조 방법
KR970024015A (ko) 다층 배선을 형성하는 방법(Method of Forming Multi-Layer Interconnection)
KR920020618A (ko) 반도체 장치의 배선 접속 구조 및 그 제조방법
KR930003297A (ko) 반도체장치용 테이프 케리어 및 그 제조방법
KR950004532A (ko) 고집적 반도체 배선구조 및 그 제조방법
KR930003260A (ko) 반도체 장치 및 그 제조 방법
US5789796A (en) Programmable anti-fuse device and method for manufacturing the same
KR900005602A (ko) 반도체장치 및 그 제조방법
KR970072325A (ko) 반도체 장치 및 그 제조 방법
KR890015403A (ko) 반도체집적회로장치
KR870004519A (ko) 집적 반도체 회로
KR920018849A (ko) 반도체장치 및 그의 제조방법
KR870008388A (ko) 반도체장치 및 그 제조방법
KR910005443A (ko) 직접 장착 반도체 팩케이지
JPH0233949A (ja) 半導体ヒューズ素子
KR970017961A (ko) 반도체 집적회로장치 및 그의 제조방법
KR20000003630A (ko) 반도체소자의 저항
KR19990025489A (ko) 안티 퓨즈 및 그 형성 방법
KR200309911Y1 (ko) 다층 배선
JPH02192145A (ja) 半導体装置

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application