KR930008959A - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법 Download PDF

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KR930008959A
KR930008959A KR1019920018969A KR920018969A KR930008959A KR 930008959 A KR930008959 A KR 930008959A KR 1019920018969 A KR1019920018969 A KR 1019920018969A KR 920018969 A KR920018969 A KR 920018969A KR 930008959 A KR930008959 A KR 930008959A
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gas
reaction chamber
semiconductor device
manufacturing
wafer
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KR1019920018969A
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KR100273602B1 (ko
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비세르 잔
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프레데릭 얀 스미트
엔.브이. 필립스 글로아이람펜파브리켄
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    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45517—Confinement of gases to vicinity of substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

본 발명은 펌프(2)에 의해 저압으로 유지되는 반응챔버(1)에서 처리가스(5)로 반도체 웨이퍼(4)의 표면상에 물질층(6)을 침적하되, 상기 반응 챔버(1)내에서 상기 웨이퍼(4)를 가스분배판(7)에 나란하게 배열하여 상기 반응챔버(1)에 대해 주변이 개방 접속구(9)를 가지는 평탄한 처리공간(8)을 형성한 후, 상기 가스분배판(7)내의 유입구(10)들을 통하여 처리공간(8)으로 처리가스(5)를 유입시키고 상기 개방접속구(9)주위에 상기 반응챔버(1)내로 보조가스(11)를 유입시키는 반도체장치의 제조방법에 관한 것이다. 본 발명에 따르면, 보조가스(11)가 개방접속구(9)의 가스압력이 처리공간(8)내의 가스압력과 사실상 같게 되도록 반응 챔버(1)내로 유입된다. 본 발명에 따른 방법은 처리공간(8)내의 처리가스(5)가 사실상없어, 그러므로 '정체된 층'이 형성되는 것을 이룬다, 그때, 상기 초리공간(8)내의 처리가스(5)는 층(6)을 형성하기 위해 사실상 모두 사용될 수 있으므로 소량의 처리가스(5)가 사용된다. 더욱이, 정체된 처리가스(5)로 인하여 더 균일한 층(6)을 얻는다.

Description

반도체장치의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 방법에 의한 반도체장치를 제조하기 위한 시스템의 개략도,
제2도는 본 발명에 따른 방법의 실시예에 따른 시스템의 처리공간과 반응 챔버사이의 개방접속구의 상세도.

Claims (6)

  1. 펌프에 의해 저압으로 유지되는 반응챔버에서 처리가스로 반도체 웨이퍼의 표면상에 물질층을 침적하되, 상기 반응 챔버내에서 상기 웨이퍼를 가스분배판에 나란하게 배열하여 상기 반응챔버에 대해 주변이 열린 접속구를 가지는 평탄한 처리공간을 형성한 후, 상기 가스분배판의 유입구들을 통하여 처리공간으로 처리가스를 유입시키고 상기 개방접속구 주위에 상기 반응챔버내로 보조가스를 유입시키는 반도체장치의 제조방법에 있어서, 상기 개방접속구내의 압력을 처리공간내의 가스압력과 사실상 같게 실현하는 그러한 방법으로 상기 보조가스를 반응챔버안으로 유입시키는 것을 특징으로 하는 반도체장치의 제조방법.
  2. 제1항에 있어서, 상기 웨이퍼의 주위 및 범위로 넘어서 돌출하는 링이 사용되는데, 이 링이 상기 웨이퍼에 바로 인접하고 상기 가스 분배판과 연속하여 처리공간의 확장부를 형성하는 것을 특징으로 하는 반도체장치의 제조방법.
  3. 제2항에 있어서, 상기 처리공간의 확장부는 가스분배판과 웨이퍼 사이의 거리보다 큰 길이를 갖는 것을 특징으로 하는 반도체장치의 제조방법.
  4. 제2항 또는 제3항에 있어서, 상기 링도 상기 웨이퍼의 홀더 같이 사용되는 것을 특징으로 하는 반도체장치의 제조방법.
  5. 제1항 내지 제4항에 있어서, 균일하게 분포된 유입구들을 가지는 가스분배판은 처리가스를 공급하기 위해 사용되는 것을 특징으로 하는 반도체장치의 제조방법.
  6. 제1항 내지 제5항 중 어느 한 항에 있어서, 상기 보조가스가 상기 개방접속구의 주위에서 동작하고 그의 주위의 사방에 개구들이 구비된 튜브를 통하여 반응 챔버안으로 주입되는 것을 특징으로 하는 반도체장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920018969A 1991-10-18 1992-10-15 반도체 장치의 제조 방법 KR100273602B1 (ko)

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EP91202701 1991-10-18
EP91202701.8 1991-10-18

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JP (1) JP2760717B2 (ko)
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Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH687258A5 (de) * 1993-04-22 1996-10-31 Balzers Hochvakuum Gaseinlassanordnung.
JPH0925586A (ja) * 1995-07-11 1997-01-28 Anelva Corp 基板処理装置および基板処理方法
US6009212A (en) 1996-07-10 1999-12-28 Washington University Method and apparatus for image registration
US6408107B1 (en) 1996-07-10 2002-06-18 Michael I. Miller Rapid convolution based large deformation image matching via landmark and volume imagery
US6611630B1 (en) 1996-07-10 2003-08-26 Washington University Method and apparatus for automatic shape characterization
US6226418B1 (en) 1997-11-07 2001-05-01 Washington University Rapid convolution based large deformation image matching via landmark and volume imagery
WO1998045501A1 (en) * 1997-04-10 1998-10-15 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device and a device for applying such a method
US5970499A (en) 1997-04-11 1999-10-19 Smith; Kurt R. Method and apparatus for producing and accessing composite data
JP3343200B2 (ja) * 1997-05-20 2002-11-11 東京エレクトロン株式会社 プラズマ処理装置
US6190732B1 (en) 1998-09-03 2001-02-20 Cvc Products, Inc. Method and system for dispensing process gas for fabricating a device on a substrate
KR100299914B1 (ko) * 1998-11-03 2001-10-29 윤종용 반도체디바이스제조방법
DE19851824C2 (de) * 1998-11-10 2002-04-04 Infineon Technologies Ag CVD-Reaktor
US6432255B1 (en) * 2000-01-31 2002-08-13 Applied Materials, Inc. Method and apparatus for enhancing chamber cleaning
EP1452626B9 (en) * 2001-12-03 2012-01-18 Ulvac, Inc. Mixer, and device and method for manufacturing thin film
TWI273642B (en) * 2002-04-19 2007-02-11 Ulvac Inc Film-forming apparatus and film-forming method
US7166199B2 (en) * 2002-12-18 2007-01-23 Cardinal Cg Company Magnetron sputtering systems including anodic gas distribution systems
DE10320597A1 (de) * 2003-04-30 2004-12-02 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von Halbleiterschichten mit zwei Prozessgasen, von denen das eine vorkonditioniert ist
US7727588B2 (en) * 2003-09-05 2010-06-01 Yield Engineering Systems, Inc. Apparatus for the efficient coating of substrates
US7850828B2 (en) * 2006-09-15 2010-12-14 Cardinal Cg Company Enhanced virtual anode
GB201021870D0 (en) * 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
US9388494B2 (en) 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
WO2016126650A1 (en) 2015-02-03 2016-08-11 Cardinal Cg Company Sputtering apparatus including gas distribution system
US10253412B2 (en) * 2015-05-22 2019-04-09 Lam Research Corporation Deposition apparatus including edge plenum showerhead assembly
CN106011793B (zh) * 2016-07-26 2019-07-26 山西中科潞安紫外光电科技有限公司 气盘及气体反应设备
JP7273086B2 (ja) * 2021-03-24 2023-05-12 株式会社Kokusai Electric 半導体装置の製造方法、プログラム及び基板処理装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3621812A (en) * 1969-06-18 1971-11-23 Texas Instruments Inc Epitaxial deposition reactor
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
JP2573493B2 (ja) * 1987-07-23 1997-01-22 株式会社フジクラ 物理量の測定方法
JPS6429974A (en) * 1987-07-24 1989-01-31 Nec Corp Document displaying method
JPH07116609B2 (ja) * 1987-11-13 1995-12-13 富士通株式会社 化学気相成長装置
JP2501948B2 (ja) * 1990-10-26 1996-05-29 三菱電機株式会社 プラズマ処理方法及びプラズマ処理装置

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EP0537854A1 (en) 1993-04-21
US5747362A (en) 1998-05-05
DE69222110T2 (de) 1998-03-05
JP2760717B2 (ja) 1998-06-04
JPH05218002A (ja) 1993-08-27
EP0537854B1 (en) 1997-09-10
KR100273602B1 (ko) 2001-01-15
DE69222110D1 (de) 1997-10-16

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