KR930005191A - 상보형 금속 산화물 반도체(cmos)집적 회로용 정전방전보호 - Google Patents

상보형 금속 산화물 반도체(cmos)집적 회로용 정전방전보호 Download PDF

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Publication number
KR930005191A
KR930005191A KR1019920014950A KR920014950A KR930005191A KR 930005191 A KR930005191 A KR 930005191A KR 1019920014950 A KR1019920014950 A KR 1019920014950A KR 920014950 A KR920014950 A KR 920014950A KR 930005191 A KR930005191 A KR 930005191A
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KR
South Korea
Prior art keywords
electrostatic discharge
conductive ring
pad
cmos
metal oxide
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KR1019920014950A
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English (en)
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KR100260960B1 (ko
Inventor
이. 밀러 윌리암
Original Assignee
존 엠. 클락
내쇼날 세미컨덕터 코포레이션
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Publication of KR930005191A publication Critical patent/KR930005191A/ko
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Publication of KR100260960B1 publication Critical patent/KR100260960B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

내용 없음.

Description

상보형 금속 산화물 반도체(CMOS)집적 회로용 정전방전보호
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명의 제1실시예에 대한 회로도,
제4도는 제3도에 예시된 회로를 통한 ESD전류 경로도,
제5도는 반전 턴온 전압레벨을 낮춘 개선된 수동 클램프 회로의 한 실시예를 예시한 도면.

Claims (1)

  1. CMOS 반도체 디바이스에 있어서, 정전 방전으로부터 상기 디바이스의 손상을 방지하며, 제1도전성 반도체 기판, 상기 반도체 기판의 상부 표면상에 배치되어 있으며 캐패시터에 의해 전기적으로 연결되는 제1 및 제2의 공간 도전링, 신호 패드, 상기 제1도전링으로 부터 정전 방전 전류를 상기 패드로 흐르게 하며, 삭 패드에 접속된 에미터, 상기 제1도전링에 접속된 콜렉터 및 상기 제2도전링에 접속된 베이스를 갖는 3단자 NPN 트랜지스터, 및 상기 패드로부터 정전 방전전류를 상기 제2도전링에 흐르게 하며, 상기 패드에 접속 에미터, 상기 제2도전링에 접속된 콜렉터 및 상기 제1도전링에 접속된 베이스를 지니는 3단자 PNP 트랜지스터를 포함하고, 상기 NPN 및 상기 PNP 트랜지스터가 상기 결합 캐패시터와 병렬로 접속되어 있는 회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920014950A 1991-08-21 1992-08-20 상보형 금속 산화물 반도체 집적 회로용 정전방전보호 KR100260960B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US07/748,119 US5301084A (en) 1991-08-21 1991-08-21 Electrostatic discharge protection for CMOS integrated circuits
US7/748119 1991-08-21
US07/748119 1991-08-21

Publications (2)

Publication Number Publication Date
KR930005191A true KR930005191A (ko) 1993-03-23
KR100260960B1 KR100260960B1 (ko) 2000-07-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920014950A KR100260960B1 (ko) 1991-08-21 1992-08-20 상보형 금속 산화물 반도체 집적 회로용 정전방전보호

Country Status (3)

Country Link
US (1) US5301084A (ko)
JP (1) JP3174636B2 (ko)
KR (1) KR100260960B1 (ko)

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Publication number Publication date
KR100260960B1 (ko) 2000-07-01
JPH05283618A (ja) 1993-10-29
JP3174636B2 (ja) 2001-06-11
US5301084A (en) 1994-04-05

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