KR930001501A - 발광 다이오우드의 제조방법 - Google Patents
발광 다이오우드의 제조방법 Download PDFInfo
- Publication number
- KR930001501A KR930001501A KR1019920010764A KR920010764A KR930001501A KR 930001501 A KR930001501 A KR 930001501A KR 1019920010764 A KR1019920010764 A KR 1019920010764A KR 920010764 A KR920010764 A KR 920010764A KR 930001501 A KR930001501 A KR 930001501A
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- emitting diode
- manufacturing
- shaped metal
- metal wire
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 발광 다이오우드의 제조방법.
제2도는 제1도의 Ⅱ - Ⅱ 확대단면도.
제3도는 소제인 금속선을 절단한 금속선재의 정면도.
제4도는 금속선재를 U자형상으로 절곡한 상태의 정면도.
제5도는 각 U자형상 금속선재에 있어서의 한쪽 리이드단자의 선단부를 횡방향으로 굴곡한 상태의 정면도.
Claims (6)
- 외주면에 광택을 보유하는 금속도금을 실시한 소재의 금속선으로부터 적정길이로 절단한 금속선재를 U자형상으로 절곡하므로써, 양 리이드단자(2), (3)를 형성하는 공정과, 상기한 U자형상 금속선재(A)에 있어서의 한쪽의 리이드단자(2)의 선단부를, 그 외주면의 좌우양측으로부터의 압압변형에 의하여 컵부(4)로 형성하는 공정과, 상기한 캡부(4) 내에 반도체칩(5)을 마운트하는 공정과, 상기한 U자형상 금속선재에 있어서의 다른쪽 리이드단자(3)의 선단과 반도체칩(5)과의 사이를 와이어 본딩하는 공정과, 상기한 U자형상 금속선재에 있어서의 양 리이드단자 선단붑을 투명 또는 반투명합성수지체의 모울드부(9로 패키지하는 공정으로 이루어지는 것을 특징으로하는 발광 다이오우드의 제조방법.
- 제1항에 있어서, 각 공정에 적어도 상기한 와이어본딩 공정보다도 이전에 있어서, 상기한 양 리이드단자의 상호간에 합성수지액을 도포·경화하여 연결부를 형성하는 공정을 부가하는 것을 특징으로 하는 발광 다이오우드의 제조방법.
- 제2항에 있어서, 연결부가 자외선 경화성합성수지제인 것을 특징으로 하는 발광 다이오드의 제조방법.
- 제1항 또는 제2항의 각 공정에, 적어도 반도체칩의 마운트 공정보다도 이전에 있어서, 복수개의 U자형상금속선재(A)를 캐리어테이프(B)에 대하여 적정간격으로 지지시키는 공정을 부가하는 것을 특징으로 하는 발광 다이오우드의 제조방법.
- 제4항에 있어서, 모울드부(8)로 패키지하는 공정이, 캐리어테이프(B)에 모울드부의 성형용형(M)을 착탈자재하게 장착하는 공정과, 이러한 각 성형용형(M)내에 합성수지를 액체상태로 충전한 후 경화하는 공정으로되어 있는 것을 특징으로 하는 발광 다이오우드의 제조방법.
- 제5항에 있어서, 캐리어테이프(B)에 있어서의 각U자형상금속선재(A)사이의 부위에 절곡선(C)을 설치하는 것을 특징으로 하는 발광 다이오우드의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3150321A JP2600028B2 (ja) | 1991-06-21 | 1991-06-21 | 半導体部品の製造方法 |
JP91-150321 | 1991-06-21 | ||
JP91-219980 | 1991-08-30 | ||
JP3219980A JP2774885B2 (ja) | 1991-08-30 | 1991-08-30 | 発光ダイオードの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR930001501A true KR930001501A (ko) | 1993-01-16 |
KR100239332B1 KR100239332B1 (ko) | 2000-01-15 |
Family
ID=26479961
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920010764A KR100239332B1 (ko) | 1991-06-21 | 1992-06-20 | 발광 다이오우드의 제조방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5221641A (ko) |
EP (1) | EP0521312B1 (ko) |
KR (1) | KR100239332B1 (ko) |
DE (1) | DE69223091T2 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101216932B1 (ko) * | 2006-04-03 | 2013-01-18 | 서울반도체 주식회사 | 램프형 발광소자 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4340862C2 (de) * | 1993-12-01 | 2002-04-11 | Vishay Semiconductor Gmbh | Vergießvorrichtung zum Herstellen von optoelektronischen Bauelementen |
DE4340864C2 (de) * | 1993-12-01 | 1996-08-01 | Telefunken Microelectron | Vorrichtung und Verfahren zum Herstellen von optoelektronischen Bauelementen |
DE19549818B4 (de) | 1995-09-29 | 2010-03-18 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiter-Bauelement |
JPH09307144A (ja) * | 1996-05-14 | 1997-11-28 | Matsushita Electric Ind Co Ltd | 発光素子及びその製造方法 |
TW414924B (en) * | 1998-05-29 | 2000-12-11 | Rohm Co Ltd | Semiconductor device of resin package |
TW436856B (en) * | 1999-07-16 | 2001-05-28 | Taiwan Oasis Entpr Co Ltd | Method for producing LED Christmas lightbulb and structure thereof |
TW433551U (en) * | 1999-10-26 | 2001-05-01 | You Shang Hua | Improvement of cup base for light emitting diode chip |
JP4926337B2 (ja) * | 2000-06-28 | 2012-05-09 | アバゴ・テクノロジーズ・ジェネラル・アイピー(シンガポール)プライベート・リミテッド | 光源 |
NZ574520A (en) * | 2002-11-27 | 2011-02-25 | Dmi Biosciences Inc | Use of casein which is at least 10% dephosphorylated for the treatment of diseases and conditions mediated by increased phosphorylation |
US20050036311A1 (en) * | 2003-08-14 | 2005-02-17 | Li-Wen Liu | LED light string manufacturing method |
US7352583B2 (en) | 2005-10-03 | 2008-04-01 | Remy Technologies, L.L.C. | Flexible lead for a pressfit diode bridge |
US8044412B2 (en) | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
TWM340555U (en) * | 2007-11-23 | 2008-09-11 | Everlight Electronics Co Ltd | Light emmitting diode device |
KR101859149B1 (ko) | 2011-04-14 | 2018-05-17 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
KR101103674B1 (ko) | 2010-06-01 | 2012-01-11 | 엘지이노텍 주식회사 | 발광 소자 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2444440A (en) * | 1946-09-27 | 1948-07-06 | Nordberg Manufacturing Co | Internal-combustion engine |
US3820237A (en) * | 1971-05-17 | 1974-06-28 | Northern Electric Co | Process for packaging light emitting devices |
JPS5527463B2 (ko) * | 1973-02-28 | 1980-07-21 | ||
US4209358A (en) * | 1978-12-04 | 1980-06-24 | Western Electric Company, Incorporated | Method of fabricating a microelectronic device utilizing unfilled epoxy adhesive |
JPS564047A (en) * | 1979-06-26 | 1981-01-16 | Nissan Motor Co Ltd | Lamination type membrane-covered oxygen sensor |
FR2466866A1 (fr) * | 1979-10-05 | 1981-04-10 | Thomson Csf | Procede de couplage entre une fibre optique et une diode opto-electronique, et tete d'emission ou de reception realisee par ce procede |
JPH0612796B2 (ja) * | 1984-06-04 | 1994-02-16 | 株式会社日立製作所 | 半導体装置 |
JPS6175570A (ja) * | 1984-09-18 | 1986-04-17 | Stanley Electric Co Ltd | 車両用灯具の光源ユニツトの製造方法 |
JPS62252181A (ja) * | 1986-04-24 | 1987-11-02 | Stanley Electric Co Ltd | 光半導体素子の製造方法 |
-
1992
- 1992-05-27 US US07/888,509 patent/US5221641A/en not_active Expired - Lifetime
- 1992-06-05 EP EP92109532A patent/EP0521312B1/en not_active Expired - Lifetime
- 1992-06-05 DE DE69223091T patent/DE69223091T2/de not_active Expired - Fee Related
- 1992-06-20 KR KR1019920010764A patent/KR100239332B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101216932B1 (ko) * | 2006-04-03 | 2013-01-18 | 서울반도체 주식회사 | 램프형 발광소자 |
Also Published As
Publication number | Publication date |
---|---|
DE69223091T2 (de) | 1998-03-05 |
EP0521312B1 (en) | 1997-11-12 |
US5221641A (en) | 1993-06-22 |
DE69223091D1 (de) | 1997-12-18 |
EP0521312A1 (en) | 1993-01-07 |
KR100239332B1 (ko) | 2000-01-15 |
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