KR930001371A - 반도체 제조용 기판 및 그 형성방법 - Google Patents

반도체 제조용 기판 및 그 형성방법 Download PDF

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Publication number
KR930001371A
KR930001371A KR1019910010829A KR910010829A KR930001371A KR 930001371 A KR930001371 A KR 930001371A KR 1019910010829 A KR1019910010829 A KR 1019910010829A KR 910010829 A KR910010829 A KR 910010829A KR 930001371 A KR930001371 A KR 930001371A
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KR
South Korea
Prior art keywords
films
substrate
film
scribe line
length
Prior art date
Application number
KR1019910010829A
Other languages
English (en)
Inventor
이정우
심명섭
신헌정
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019910010829A priority Critical patent/KR930001371A/ko
Priority to DE4220721A priority patent/DE4220721A1/de
Priority to ITMI921562A priority patent/IT1255174B/it
Priority to GB9213586A priority patent/GB2257298A/en
Priority to JP4169127A priority patent/JPH06204401A/ja
Priority to US07/904,613 priority patent/US5300816A/en
Priority to FR9207980A priority patent/FR2678427A1/fr
Publication of KR930001371A publication Critical patent/KR930001371A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2

Abstract

내용 없음

Description

반도체 제조용 기판 및 그 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 이 발명의 계단식 단차 형성을 보인 한 실시예의 단면도.
제3도 내지 제5도는 이 발명의 다른 실시예를 보인 단면도.

Claims (7)

  1. 기판 위에 다수의 막이 적층된 구조의 반도체 장치에 있어서, 기판 위에 적층된 다수의 막의 스크라이브 라인에서의 길이를 달리하여 계단식 단차를 갖게 한 반도체 장치 제조용 기판.
  2. 반도체 장치의 소자 형성에 사용되는 다수의 막이 기판의 스크라이브 라인상에서 이루는 단차 형성방법에 있어서, 기판의 스크리이브 라인 상에 다수의 막질이 적층되는 순서에 따라 먼저 형성되는 하부막과 그보다 나중에 형성되는 상부막의 연장길이를 달리하여 적층된 다수의 막질이 상기 기판과 계단식 경사각을 갖도록 하는 것을 특징으로 하는 계단식 단차 형성방법.
  3. 제2항에 있어서, 상기 하부막은 절연막이고, 상기 상부막은 금속배선막인 것을 특징으로 하는 계단식 단차형성방법.
  4. 제2항에 있어서, 상기 하부막은 금속배선막이고, 상기 상부막은 절연막인 것을 특징으로 하는 계단식 단차형성방법.
  5. 제2항에 있어서, 상기 계단식 단차의 경사각은 스크라이브 라인폭을 감안하여 적층되는 막질의 연장길이를 달리함으로써 그의 경사각을 다르게 형성하는 것을 특징으로 하는 계단식 단차 형성방법.
  6. 제2항에 있어서, 먼저 형성되는 막의 연장길이보다 나중에 차례로 형성되는 막의 연장길이가 소정의 길이만큼 짧게 형성되는 것을 특징으로 하는 계단식 단차 형성방법.
  7. 제2항에 있어서, 먼저 형성되는 막의 연장길이보다 나중에 차례로 형성되는 막의 연장길이가 소정의 길이만큼 길게 형성되는 것을 특징으로 하는 계단식 단차 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019910010829A 1991-06-27 1991-06-27 반도체 제조용 기판 및 그 형성방법 KR930001371A (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1019910010829A KR930001371A (ko) 1991-06-27 1991-06-27 반도체 제조용 기판 및 그 형성방법
DE4220721A DE4220721A1 (de) 1991-06-27 1992-06-24 Halbleiterwafer
ITMI921562A IT1255174B (it) 1991-06-27 1992-06-25 Wafer semiconduttore e suo procedimento di fabbricazione
GB9213586A GB2257298A (en) 1991-06-27 1992-06-26 Semiconductor wafer with multilayer structure
JP4169127A JPH06204401A (ja) 1991-06-27 1992-06-26 半導体ウェーハ
US07/904,613 US5300816A (en) 1991-06-27 1992-06-26 Semiconductor wafer with improved step coverage along scribe lines
FR9207980A FR2678427A1 (fr) 1991-06-27 1992-06-29 Pastille semiconductrice.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910010829A KR930001371A (ko) 1991-06-27 1991-06-27 반도체 제조용 기판 및 그 형성방법

Publications (1)

Publication Number Publication Date
KR930001371A true KR930001371A (ko) 1993-01-16

Family

ID=19316427

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910010829A KR930001371A (ko) 1991-06-27 1991-06-27 반도체 제조용 기판 및 그 형성방법

Country Status (7)

Country Link
US (1) US5300816A (ko)
JP (1) JPH06204401A (ko)
KR (1) KR930001371A (ko)
DE (1) DE4220721A1 (ko)
FR (1) FR2678427A1 (ko)
GB (1) GB2257298A (ko)
IT (1) IT1255174B (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2894165B2 (ja) * 1993-07-24 1999-05-24 ヤマハ株式会社 半導体装置
JP2755131B2 (ja) * 1993-10-27 1998-05-20 日本電気株式会社 半導体装置
US5686171A (en) * 1993-12-30 1997-11-11 Vlsi Technology, Inc. Integrated circuit scribe line structures and methods for making same
US5861660A (en) * 1995-08-21 1999-01-19 Stmicroelectronics, Inc. Integrated-circuit die suitable for wafer-level testing and method for forming the same
US5700732A (en) * 1996-08-02 1997-12-23 Micron Technology, Inc. Semiconductor wafer, wafer alignment patterns and method of forming wafer alignment patterns
US6197645B1 (en) 1997-04-21 2001-03-06 Advanced Micro Devices, Inc. Method of making an IGFET with elevated source/drain regions in close proximity to gate with sloped sidewalls
JP3132451B2 (ja) * 1998-01-21 2001-02-05 日本電気株式会社 半導体装置およびその製造方法
US6441465B2 (en) 1999-02-09 2002-08-27 Winbond Electronics Corp. Scribe line structure for preventing from damages thereof induced during fabrication
JP2000294771A (ja) * 1999-04-02 2000-10-20 Fuji Electric Co Ltd プレーナ型半導体装置
KR100509651B1 (ko) * 2001-10-31 2005-08-23 미쓰보시 다이야몬도 고교 가부시키가이샤 반도체 웨이퍼의 스크라이브 라인의 형성방법 및스크라이브 라인의 형성장치
US7829462B2 (en) * 2007-05-03 2010-11-09 Teledyne Licensing, Llc Through-wafer vias
US8263496B1 (en) * 2011-04-12 2012-09-11 Tokyo Electron Limited Etching method for preparing a stepped structure
TWI467757B (zh) * 2013-08-02 2015-01-01 Chipbond Technology Corp 半導體結構
TWI467711B (zh) * 2013-09-10 2015-01-01 Chipbond Technology Corp 半導體結構

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
US3707760A (en) * 1971-05-19 1973-01-02 Sieburg Ind Inc Method and device for article working such as fracturing of semiconductor slices and separating semiconductor chips
JPS5467370A (en) * 1977-11-09 1979-05-30 Hitachi Ltd Mos semiconductor device
US4381201A (en) * 1980-03-11 1983-04-26 Fujitsu Limited Method for production of semiconductor devices
US4835592A (en) * 1986-03-05 1989-05-30 Ixys Corporation Semiconductor wafer with dice having briding metal structure and method of manufacturing same
JPS6428827A (en) * 1987-07-24 1989-01-31 Hitachi Ltd Manufacture of semiconductor device
JPH01120029A (ja) * 1987-11-02 1989-05-12 Seiko Epson Corp 半導体製造装置のスクライブ構造
JPH0821559B2 (ja) * 1988-02-12 1996-03-04 三菱電機株式会社 半導体集積回路装置の製造方法
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US5053836A (en) * 1989-11-21 1991-10-01 Eastman Kodak Company Cleaving of diode arrays with scribing channels
JPH03185750A (ja) * 1989-12-14 1991-08-13 Victor Co Of Japan Ltd 半導体装置
JPH1028827A (ja) * 1996-07-19 1998-02-03 Mitsubishi Heavy Ind Ltd 除塵装置

Also Published As

Publication number Publication date
JPH06204401A (ja) 1994-07-22
US5300816A (en) 1994-04-05
ITMI921562A1 (it) 1993-12-25
IT1255174B (it) 1995-10-20
GB9213586D0 (en) 1992-08-12
FR2678427A1 (fr) 1992-12-31
ITMI921562A0 (it) 1992-06-25
GB2257298A (en) 1993-01-06
DE4220721A1 (de) 1993-01-14

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