KR930000962B1 - 반도체 기억장치 - Google Patents

반도체 기억장치 Download PDF

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Publication number
KR930000962B1
KR930000962B1 KR1019890009296A KR890009296A KR930000962B1 KR 930000962 B1 KR930000962 B1 KR 930000962B1 KR 1019890009296 A KR1019890009296 A KR 1019890009296A KR 890009296 A KR890009296 A KR 890009296A KR 930000962 B1 KR930000962 B1 KR 930000962B1
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KR
South Korea
Prior art keywords
read
write
memory cells
memory cell
lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019890009296A
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English (en)
Korean (ko)
Other versions
KR900000904A (ko
Inventor
히로후미 시노하라
Original Assignee
미쓰비시뎅끼 가부시끼가이샤
시기 모리야
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시뎅끼 가부시끼가이샤, 시기 모리야 filed Critical 미쓰비시뎅끼 가부시끼가이샤
Publication of KR900000904A publication Critical patent/KR900000904A/ko
Application granted granted Critical
Publication of KR930000962B1 publication Critical patent/KR930000962B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Memory System (AREA)
KR1019890009296A 1988-06-30 1989-06-30 반도체 기억장치 Expired - Fee Related KR930000962B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63165647A JP2600304B2 (ja) 1988-06-30 1988-06-30 半導体記憶装置とこれを用いたデータパス
JP88-165647 1988-06-30
JP63-165647 1988-06-30

Publications (2)

Publication Number Publication Date
KR900000904A KR900000904A (ko) 1990-01-31
KR930000962B1 true KR930000962B1 (ko) 1993-02-11

Family

ID=15816337

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890009296A Expired - Fee Related KR930000962B1 (ko) 1988-06-30 1989-06-30 반도체 기억장치

Country Status (4)

Country Link
US (1) US5089992A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP2600304B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR930000962B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3906895A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0430101B1 (en) * 1989-11-24 1996-01-17 Nec Corporation Semiconductor memory device having resettable memory cells
JPH03171662A (ja) * 1989-11-29 1991-07-25 Sharp Corp 信号線システム
JP2891504B2 (ja) * 1990-03-13 1999-05-17 三菱電機株式会社 マルチポートメモリ
EP0505926B1 (en) * 1991-03-19 1997-01-02 Fujitsu Limited Multiport memory
US5652723A (en) 1991-04-18 1997-07-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device
US5829007A (en) * 1993-06-24 1998-10-27 Discovision Associates Technique for implementing a swing buffer in a memory array
US5737569A (en) * 1993-06-30 1998-04-07 Intel Corporation Multiport high speed memory having contention arbitration capability without standby delay
JP3432548B2 (ja) * 1993-07-26 2003-08-04 株式会社日立製作所 半導体記憶装置
US5519655A (en) * 1994-09-29 1996-05-21 Texas Instruments Incorporated Memory architecture using new power saving row decode implementation
JPH08167291A (ja) * 1994-12-07 1996-06-25 Sony Corp 半導体メモリ装置
JPH08212132A (ja) * 1995-02-07 1996-08-20 Mitsubishi Electric Corp 記憶装置
US5619447A (en) * 1995-05-02 1997-04-08 Motorola, Inc. Ferro-electric memory array architecture and method for forming the same
US5668761A (en) * 1995-09-08 1997-09-16 International Business Machines Corporation Fast read domino SRAM
US5815458A (en) * 1996-09-06 1998-09-29 Micron Technology, Inc. System and method for writing data to memory cells so as to enable faster reads of the data using dual wordline drivers
US6144325A (en) * 1996-12-20 2000-11-07 International Business Machines Corporation Register file array having a two-bit to four-bit encoder
KR100388319B1 (ko) 1998-12-30 2003-10-10 주식회사 하이닉스반도체 로우디코딩어레이의출력신호배치구조
US6535963B1 (en) * 1999-06-30 2003-03-18 Cisco Technology, Inc. Memory apparatus and method for multicast devices
FR2829278B1 (fr) * 2001-08-31 2005-04-15 Dolphin Integration Sa Memoire a lignes de bits partagees
JP2006268028A (ja) * 2005-02-28 2006-10-05 Seiko Epson Corp 電気光学装置用基板、電気光学装置及び電子機器
JP4849817B2 (ja) * 2005-04-08 2012-01-11 ルネサスエレクトロニクス株式会社 半導体記憶装置
KR101380187B1 (ko) * 2007-10-08 2014-04-03 삼성전자주식회사 저전력, 낮은 독출 디스터번스를 갖는 비휘발성 메모리 장치 및 그것의 프리챠지 방법 및 독출 방법
JP5578706B2 (ja) * 2010-03-31 2014-08-27 ルネサスエレクトロニクス株式会社 半導体記憶装置
US9287370B2 (en) * 2012-03-02 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Memory device comprising a transistor including an oxide semiconductor and semiconductor device including the same
US9058860B2 (en) * 2012-03-29 2015-06-16 Memoir Systems, Inc. Methods and apparatus for synthesizing multi-port memory circuits
US8929153B1 (en) * 2013-08-23 2015-01-06 Qualcomm Incorporated Memory with multiple word line design
CN111814418B (zh) * 2020-06-30 2024-11-22 京微齐力(北京)科技股份有限公司 一种fpga配置存储器
US20230164975A1 (en) * 2021-11-19 2023-05-25 Taiwan Semiconductor Manufacturing Company Limited Dynamic random access memory devices with enhanced data retention and methods of forming the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4287575A (en) * 1979-12-28 1981-09-01 International Business Machines Corporation High speed high density, multi-port random access memory cell
JPS58211392A (ja) * 1982-05-31 1983-12-08 Toshiba Corp 半導体記憶装置
JPS60254489A (ja) * 1984-05-31 1985-12-16 Fujitsu Ltd 半導体記憶装置
US4613958A (en) * 1984-06-28 1986-09-23 International Business Machines Corporation Gate array chip
JPH0652784B2 (ja) * 1984-12-07 1994-07-06 富士通株式会社 ゲートアレイ集積回路装置及びその製造方法
DE3680371D1 (de) * 1985-04-10 1991-08-29 Nec Corp Speicher mit auswaehlbarer wortlaenge.
US4833651A (en) * 1986-07-24 1989-05-23 National Semiconductor Corporation High-speed, asynchronous, No-Fall-Through, first-in-first out memory with high data integrity
JPS63104297A (ja) * 1986-10-22 1988-05-09 Nec Corp 半導体記憶装置
JPS63108593A (ja) * 1986-10-27 1988-05-13 Fujitsu Ltd ダイナミツクランダムアクセスメモリ
JPS63272121A (ja) * 1987-04-30 1988-11-09 Oki Electric Ind Co Ltd ゲ−トアレイ
JPH0713872B2 (ja) * 1987-11-24 1995-02-15 三菱電機株式会社 半導体記憶装置
US4910712A (en) * 1988-02-18 1990-03-20 Saratoga Semiconductor Corporation Memory cell with a plurality of pass gates

Also Published As

Publication number Publication date
DE3906895A1 (de) 1990-02-08
US5089992A (en) 1992-02-18
JP2600304B2 (ja) 1997-04-16
DE3906895C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-08-26
KR900000904A (ko) 1990-01-31
JPH0214488A (ja) 1990-01-18

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