KR920700307A - 분리 가스류의 제공방법 및 그 장치 - Google Patents

분리 가스류의 제공방법 및 그 장치

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Publication number
KR920700307A
KR920700307A KR1019900702640A KR900702640A KR920700307A KR 920700307 A KR920700307 A KR 920700307A KR 1019900702640 A KR1019900702640 A KR 1019900702640A KR 900702640 A KR900702640 A KR 900702640A KR 920700307 A KR920700307 A KR 920700307A
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South Korea
Prior art keywords
tiba
liquid
triisobutylaluminum
evaporator
pct
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KR1019900702640A
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English (en)
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KR0177494B1 (ko
Inventor
언스트헨드리 오거스트 그레네만
로렌스 프란스 템즌 콰크만
한스 윌렘 피카
보우데위즌 지스 베르트 슬루이젝
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원본미기재
에이 에스 엠 유럽 비.브리
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Publication of KR920700307A publication Critical patent/KR920700307A/ko
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Publication of KR0177494B1 publication Critical patent/KR0177494B1/ko

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C23C16/20Deposition of aluminium only
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4402Reduction of impurities in the source gas
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S159/00Concentrating evaporators
    • Y10S159/10Organic

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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Medicinal Preparation (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

내용 없음

Description

분리 가스류의 제공방법 및 그 장치
내용없음

Claims (8)

  1. 액상 트리이소부틸 알루미늄(TIBA), 를 증발시킴에 의해 제조되는 TIBA를 필수적으로 함유하며, 이 공정시 생성되는 이소부탄을 제거시킨 분리 가스류의 제공방법에 있어서, 단주기동안 액상 TIBA를 증발기에 제어공급함에 의해 증기류가 계측됨을 특징으로 하는 방법.
  2. 제1항에 있어서, TIBA는 액상으로 증발기에 공급되기전 예열되며, 이 공정시 생성되는 증기는 제거되는 방법.
  3. 제2항에 있어서, 예열은 30∼40℃로 이행되는 방법.
  4. 전술한 항들중 어느 한항에 있어서, 증발은 40∼60℃로 이행되는 방법.
  5. 전술한 항들중 어느 한항에 있어서, 필수적으로 TIBA를 함유한 분리 증기류
    는 반응기에 공급되며, 여기에서의 배출물은 제2항의 증기와 합쳐져 저장 및 냉각되어 제거되는 방법.
  6. 제5항에 있어서, 배출가스는 적어도 두 단계로 냉각되는 방법.
  7. 도입된 액체 TIBA를 수용하는 챔버를 갖고 플레이트 증발기에 개방된 유출부 수단을 구비한 예열장치를 포함하는, 전술한 항들중 어느 한 항의 방법을 수행하는 장치.
  8. 제7항에 있어서, TIBA 수용챔버는 지속시간을 조정하는 수단을 구비하는 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900702640A 1989-04-19 1990-04-03 Tiba를 주성분으로 하는 가스류의 제조 방법 및 그 장치 KR0177494B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NL8900980 1989-04-19
NL8900980A NL8900980A (nl) 1989-04-19 1989-04-19 Werkwijze voor het voorzien in een gedoseerde dampstroom alsmede inrichting voor het uitvoeren daarvan.
PCT/NL1990/000042 WO1990012900A1 (en) 1989-04-19 1990-04-03 Method for providing a proportioned vapour flow and also apparatus for carrying it out

Publications (2)

Publication Number Publication Date
KR920700307A true KR920700307A (ko) 1992-02-19
KR0177494B1 KR0177494B1 (ko) 1999-02-18

Family

ID=19854506

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Application Number Title Priority Date Filing Date
KR1019900702640A KR0177494B1 (ko) 1989-04-19 1990-04-03 Tiba를 주성분으로 하는 가스류의 제조 방법 및 그 장치

Country Status (8)

Country Link
US (1) US5354433A (ko)
EP (1) EP0468996B1 (ko)
JP (1) JP2904920B2 (ko)
KR (1) KR0177494B1 (ko)
AT (1) ATE126552T1 (ko)
DE (1) DE69021722T2 (ko)
NL (1) NL8900980A (ko)
WO (1) WO1990012900A1 (ko)

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ATE126552T1 (de) 1995-09-15
DE69021722T2 (de) 1996-02-29
DE69021722D1 (de) 1995-09-21
US5354433A (en) 1994-10-11
EP0468996B1 (en) 1995-08-16
EP0468996A1 (en) 1992-02-05
KR0177494B1 (ko) 1999-02-18

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