JPS6439370A - Thin film forming device - Google Patents

Thin film forming device

Info

Publication number
JPS6439370A
JPS6439370A JP19537387A JP19537387A JPS6439370A JP S6439370 A JPS6439370 A JP S6439370A JP 19537387 A JP19537387 A JP 19537387A JP 19537387 A JP19537387 A JP 19537387A JP S6439370 A JPS6439370 A JP S6439370A
Authority
JP
Japan
Prior art keywords
thin film
nozzle
raw material
cluster
carrier gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19537387A
Other languages
Japanese (ja)
Inventor
Iwao Nishiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP19537387A priority Critical patent/JPS6439370A/en
Publication of JPS6439370A publication Critical patent/JPS6439370A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To form a good-quality thin film having high crystallinity by vaporizing a solid raw material, mixing the vapor with a carrier gas, injecting the mixture into a vacuum through a nozzle to form a neutral cluster beam, and forming the film. CONSTITUTION:A supersonic molecular beam generating chamber 11, a differential exhaust hood 12, and a thin film growth chamber 13 are respectively evacuated by an evacuation system at a high speed, the nozzle 21 is heated by a heater 22, and a carrier gas (nitrogen, etc.) at 0.1-10atm. is simultaneously sent to the nozzle 21. The raw material 23 is heated and vaporized, the vapor is mixed with the carrier gas to form a gaseous mixture contg. about 0.1-10% vaporized raw material, and the gaseous mixture is injected from the nozzle 21 by free expansion. As a result, the gaseous raw material is cooled and condensed to form a cluster, and the obtained cluster beam enters the differential exhaust hood 12 through a skimmer 24 to form an almost collisionless molecular beam. The cluster molecular beam is passed through a collimator 25 to enhance its directivity, and allowed to collide with the substrate 26 set in the thin film growth chamber 13 to form a thin film.
JP19537387A 1987-08-06 1987-08-06 Thin film forming device Pending JPS6439370A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19537387A JPS6439370A (en) 1987-08-06 1987-08-06 Thin film forming device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19537387A JPS6439370A (en) 1987-08-06 1987-08-06 Thin film forming device

Publications (1)

Publication Number Publication Date
JPS6439370A true JPS6439370A (en) 1989-02-09

Family

ID=16340091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19537387A Pending JPS6439370A (en) 1987-08-06 1987-08-06 Thin film forming device

Country Status (1)

Country Link
JP (1) JPS6439370A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5234105A (en) * 1990-02-22 1993-08-10 Matsushita Electric Industrial Co., Ltd. Packages for circuit boards for preventing oxidation thereof
US5510166A (en) * 1989-01-23 1996-04-23 Mitsubishi Gas Chemical Company, Inc. Inhibitor parcel and method for preserving electronic devices or electronic parts
US5582879A (en) * 1993-11-08 1996-12-10 Canon Kabushiki Kaisha Cluster beam deposition method for manufacturing thin film
WO2003092033A1 (en) * 2002-04-23 2003-11-06 National Institute Of Advanced Industrial Science And Technology Polynuclear metal molecular beam apparatus
EP1486583A1 (en) * 2002-02-26 2004-12-15 Japan Science and Technology Agency Method and device for manufacturing semiconductor or insulator/metallic laminar composite cluster
US11165002B2 (en) 2017-08-30 2021-11-02 Soko Kagau Co., Ltd. Light-emitting device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5510166A (en) * 1989-01-23 1996-04-23 Mitsubishi Gas Chemical Company, Inc. Inhibitor parcel and method for preserving electronic devices or electronic parts
US5234105A (en) * 1990-02-22 1993-08-10 Matsushita Electric Industrial Co., Ltd. Packages for circuit boards for preventing oxidation thereof
US5582879A (en) * 1993-11-08 1996-12-10 Canon Kabushiki Kaisha Cluster beam deposition method for manufacturing thin film
EP1486583A1 (en) * 2002-02-26 2004-12-15 Japan Science and Technology Agency Method and device for manufacturing semiconductor or insulator/metallic laminar composite cluster
EP1486583A4 (en) * 2002-02-26 2008-03-26 Japan Science & Tech Agency Method and device for manufacturing semiconductor or insulator/metallic laminar composite cluster
US7638019B2 (en) 2002-02-26 2009-12-29 Japan Science And Technology Agency Method and device for manufacturing semiconductor or insulator-metallic laminar composite cluster
WO2003092033A1 (en) * 2002-04-23 2003-11-06 National Institute Of Advanced Industrial Science And Technology Polynuclear metal molecular beam apparatus
US11165002B2 (en) 2017-08-30 2021-11-02 Soko Kagau Co., Ltd. Light-emitting device

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