JPS6462471A - Vapor phase synthesis method for high pressure-phase boron nitride - Google Patents

Vapor phase synthesis method for high pressure-phase boron nitride

Info

Publication number
JPS6462471A
JPS6462471A JP21924187A JP21924187A JPS6462471A JP S6462471 A JPS6462471 A JP S6462471A JP 21924187 A JP21924187 A JP 21924187A JP 21924187 A JP21924187 A JP 21924187A JP S6462471 A JPS6462471 A JP S6462471A
Authority
JP
Japan
Prior art keywords
high pressure
boron nitride
plasma
substrate
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21924187A
Other languages
Japanese (ja)
Other versions
JPH0814024B2 (en
Inventor
Kazuaki Kurihara
Kenichi Sasaki
Motonobu Kawarada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP21924187A priority Critical patent/JPH0814024B2/en
Publication of JPS6462471A publication Critical patent/JPS6462471A/en
Publication of JPH0814024B2 publication Critical patent/JPH0814024B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To obtain high-quality high pressure-phase boron nitride at high film- forming speed, by irradiating a substrate with heat plasma produced from a gaseous raw material containing boron and nitrogen in the form of a plasma jet and then applying rapid cooling to the above. CONSTITUTION:A gaseous raw material containing boron atoms and nitrogen atoms is prepared. This gaseous starting material is introduced through a gas- introducing hole 3, which is formed into heat-plasma state by means of arc discharge due to the inductive coupling of microwaves. Subsequently, this heat plasma is applied in the form of a plasma jet 9 to a substrate 10, followed by rapid cooling, by which vapor growth of high pressure-phase boron nitride can be applied to the substrate 10.
JP21924187A 1987-09-03 1987-09-03 High-pressure phase boron nitride vapor phase synthesis method Expired - Lifetime JPH0814024B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21924187A JPH0814024B2 (en) 1987-09-03 1987-09-03 High-pressure phase boron nitride vapor phase synthesis method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21924187A JPH0814024B2 (en) 1987-09-03 1987-09-03 High-pressure phase boron nitride vapor phase synthesis method

Publications (2)

Publication Number Publication Date
JPS6462471A true JPS6462471A (en) 1989-03-08
JPH0814024B2 JPH0814024B2 (en) 1996-02-14

Family

ID=16732426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21924187A Expired - Lifetime JPH0814024B2 (en) 1987-09-03 1987-09-03 High-pressure phase boron nitride vapor phase synthesis method

Country Status (1)

Country Link
JP (1) JPH0814024B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02250969A (en) * 1989-03-24 1990-10-08 Yukio Ichinose Production of boron nitride
WO1998051632A1 (en) * 1997-05-14 1998-11-19 France Telecom Method for depositing a coating layer on an optical fibre while it is being drawn and device for its implementation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02250969A (en) * 1989-03-24 1990-10-08 Yukio Ichinose Production of boron nitride
WO1998051632A1 (en) * 1997-05-14 1998-11-19 France Telecom Method for depositing a coating layer on an optical fibre while it is being drawn and device for its implementation
FR2763327A1 (en) * 1997-05-14 1998-11-20 France Telecom METHOD FOR DEPOSITING A COATING LAYER ON AN OPTICAL FIBER DURING ITS FIBRATION AND DEVICE FOR IMPLEMENTING IT

Also Published As

Publication number Publication date
JPH0814024B2 (en) 1996-02-14

Similar Documents

Publication Publication Date Title
KR101475416B1 (en) Method of forming a film by deposition from a plasma
EP0099724A3 (en) Deposition of coatings upon substrates utilising a high pressure, non-local thermal equilibrium arc plasma
MY107107A (en) Method for preparing vaporized reactants for chemical vapor deposition.
EP0216932A4 (en) Rhombohedral polycrystalline boron nitride and process for its production.
WO1999014787A3 (en) Method for producing plasma by microwave irradiation
CA2037413A1 (en) Method for producing a fine grained powder consisting of nitrides and carbonitrides of titanium
JPS57158370A (en) Formation of metallic thin film
JPS6462471A (en) Vapor phase synthesis method for high pressure-phase boron nitride
JPS56138921A (en) Method of formation for impurity introduction layer
JPS63310795A (en) Vapor phase synthesis method for diamond by microwave plasma jet
JPS55164072A (en) Coating
JPS6447850A (en) Manufacture of thermoelement
JPS56129696A (en) Crystal growing apparatus
JPS56149306A (en) Formation of silicon nitride film
JPS5676240A (en) Quartz reaction tube for treatment of semiconductor
JPS5771127A (en) Manufacture of semiamorphous semiconductor
JPH01201481A (en) Method and apparatus for vapor phase synthesis of high-pressure phase boron nitride
Su Process of Making High Purity Aluminum Nitride
JPS649893A (en) Method for synthesizing diamond by vapor process using high-frequency plasma
JPS5642350A (en) Formation of insulating film
JPS6446936A (en) Growth method of thin film
Tsubouchi et al. Process for Forming Deposition Film
JPS6411976A (en) Plasma cvd device
JPH0354108A (en) Production of diamond particle
JPH01305896A (en) Method of vapor phase synthesis of diamond