KR920017278A - 저전력, 저잡음 및 고출력 회로 응용에 적합한 마이크로파 헤테로 접합 바이폴라 트랜지스터 및 이의 제조방법 - Google Patents

저전력, 저잡음 및 고출력 회로 응용에 적합한 마이크로파 헤테로 접합 바이폴라 트랜지스터 및 이의 제조방법 Download PDF

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Publication number
KR920017278A
KR920017278A KR1019920003077A KR920003077A KR920017278A KR 920017278 A KR920017278 A KR 920017278A KR 1019920003077 A KR1019920003077 A KR 1019920003077A KR 920003077 A KR920003077 A KR 920003077A KR 920017278 A KR920017278 A KR 920017278A
Authority
KR
South Korea
Prior art keywords
emitter
layer
base layer
heterojunction bipolar
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019920003077A
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English (en)
Korean (ko)
Inventor
베이락타로글루 버한
Original Assignee
윌리엄 이. 힐러
텍사스 인스트루먼츠 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 윌리엄 이. 힐러, 텍사스 인스트루먼츠 인코포레이티드 filed Critical 윌리엄 이. 힐러
Publication of KR920017278A publication Critical patent/KR920017278A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/136—Emitter regions of BJTs of heterojunction BJTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Bipolar Transistors (AREA)
KR1019920003077A 1991-02-28 1992-02-27 저전력, 저잡음 및 고출력 회로 응용에 적합한 마이크로파 헤테로 접합 바이폴라 트랜지스터 및 이의 제조방법 Ceased KR920017278A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US66209391A 1991-02-28 1991-02-28
US662,093 1991-02-28

Publications (1)

Publication Number Publication Date
KR920017278A true KR920017278A (ko) 1992-09-26

Family

ID=24656356

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920003077A Ceased KR920017278A (ko) 1991-02-28 1992-02-27 저전력, 저잡음 및 고출력 회로 응용에 적합한 마이크로파 헤테로 접합 바이폴라 트랜지스터 및 이의 제조방법

Country Status (5)

Country Link
US (1) US5528060A (cg-RX-API-DMAC7.html)
EP (1) EP0501279A1 (cg-RX-API-DMAC7.html)
JP (1) JPH07169776A (cg-RX-API-DMAC7.html)
KR (1) KR920017278A (cg-RX-API-DMAC7.html)
TW (1) TW204412B (cg-RX-API-DMAC7.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0160542B1 (ko) * 1994-12-15 1999-02-01 정선종 모노리틱 마이크로 웨이브 집적회로용 기판 및 그 제조방법
US5761028A (en) * 1996-05-02 1998-06-02 Chrysler Corporation Transistor connection assembly having IGBT (X) cross ties
CN101189728A (zh) * 2005-06-01 2008-05-28 Nxp股份有限公司 利用改进的npn双极晶体管基极接入电阻的方法和器件

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3444443A (en) * 1966-12-26 1969-05-13 Hitachi Ltd Semiconductor device for high frequency and high power use
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
FR2352404A1 (fr) * 1976-05-20 1977-12-16 Comp Generale Electricite Transistor a heterojonction
KR900001394B1 (en) * 1985-04-05 1990-03-09 Fujitsu Ltd Super high frequency intergrated circuit device
US5063427A (en) * 1987-10-13 1991-11-05 Northrop Corporation Planar bipolar transistors including heterojunction transistors
JP2851044B2 (ja) * 1988-03-30 1999-01-27 株式会社東芝 半導体装置の製造方法
US5097312A (en) * 1989-02-16 1992-03-17 Texas Instruments Incorporated Heterojunction bipolar transistor and integration of same with field effect device
JP2804095B2 (ja) * 1989-07-10 1998-09-24 株式会社東芝 ヘテロ接合バイボーラトランジスタ

Also Published As

Publication number Publication date
US5528060A (en) 1996-06-18
TW204412B (cg-RX-API-DMAC7.html) 1993-04-21
EP0501279A1 (en) 1992-09-02
JPH07169776A (ja) 1995-07-04

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