KR920010596B1 - Npn 트랜지스터의 래치전압을 이용한 정전내력향상 래터럴 pnp 트랜지스터 - Google Patents

Npn 트랜지스터의 래치전압을 이용한 정전내력향상 래터럴 pnp 트랜지스터 Download PDF

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Publication number
KR920010596B1
KR920010596B1 KR1019890018743A KR890018743A KR920010596B1 KR 920010596 B1 KR920010596 B1 KR 920010596B1 KR 1019890018743 A KR1019890018743 A KR 1019890018743A KR 890018743 A KR890018743 A KR 890018743A KR 920010596 B1 KR920010596 B1 KR 920010596B1
Authority
KR
South Korea
Prior art keywords
emitter
collector
transistor
pnp transistor
lateral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019890018743A
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English (en)
Korean (ko)
Other versions
KR910013586A (ko
Inventor
이호진
Original Assignee
삼성전자 주식회사
김광호
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사, 김광호 filed Critical 삼성전자 주식회사
Priority to KR1019890018743A priority Critical patent/KR920010596B1/ko
Priority to TW079110351A priority patent/TW198136B/zh
Priority to JP2402505A priority patent/JP2597753B2/ja
Priority to DE4040070A priority patent/DE4040070C2/de
Priority to CN90109971A priority patent/CN1020027C/zh
Publication of KR910013586A publication Critical patent/KR910013586A/ko
Priority to US07/860,271 priority patent/US5237198A/en
Application granted granted Critical
Publication of KR920010596B1 publication Critical patent/KR920010596B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H10D89/713—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base region coupled to the collector region of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H10P14/6349—

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019890018743A 1989-12-16 1989-12-16 Npn 트랜지스터의 래치전압을 이용한 정전내력향상 래터럴 pnp 트랜지스터 Expired KR920010596B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1019890018743A KR920010596B1 (ko) 1989-12-16 1989-12-16 Npn 트랜지스터의 래치전압을 이용한 정전내력향상 래터럴 pnp 트랜지스터
TW079110351A TW198136B (cg-RX-API-DMAC10.html) 1989-12-16 1990-12-08
JP2402505A JP2597753B2 (ja) 1989-12-16 1990-12-14 Ｎｐｎトランジスターのラッチ電圧を利用した静電耐力向上ラテラルｐｎｐトランジスター
DE4040070A DE4040070C2 (de) 1989-12-16 1990-12-14 PNP-Transistor mit einem Schutzelement zum Schutz vor statischer Elektrizität
CN90109971A CN1020027C (zh) 1989-12-16 1990-12-15 一种利用npn晶体管锁闩电压的横向pnp晶体管
US07/860,271 US5237198A (en) 1989-12-16 1992-04-01 Lateral PNP transistor using a latch voltage of NPN transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890018743A KR920010596B1 (ko) 1989-12-16 1989-12-16 Npn 트랜지스터의 래치전압을 이용한 정전내력향상 래터럴 pnp 트랜지스터

Publications (2)

Publication Number Publication Date
KR910013586A KR910013586A (ko) 1991-08-08
KR920010596B1 true KR920010596B1 (ko) 1992-12-10

Family

ID=19293038

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890018743A Expired KR920010596B1 (ko) 1989-12-16 1989-12-16 Npn 트랜지스터의 래치전압을 이용한 정전내력향상 래터럴 pnp 트랜지스터

Country Status (5)

Country Link
JP (1) JP2597753B2 (cg-RX-API-DMAC10.html)
KR (1) KR920010596B1 (cg-RX-API-DMAC10.html)
CN (1) CN1020027C (cg-RX-API-DMAC10.html)
DE (1) DE4040070C2 (cg-RX-API-DMAC10.html)
TW (1) TW198136B (cg-RX-API-DMAC10.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10343681B4 (de) * 2003-09-18 2007-08-09 Atmel Germany Gmbh Halbleiterstruktur und deren Verwendung, insbesondere zum Begrenzen von Überspannungen
CN102280484B (zh) * 2011-08-06 2015-06-03 深圳市稳先微电子有限公司 一种栅源和栅漏过压保护的晶体管功率器件及其制造方法
JP6077692B1 (ja) * 2016-03-04 2017-02-08 伸興化成株式会社 リサイクル可能な合成樹脂タイル及びその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4291319A (en) * 1976-05-19 1981-09-22 National Semiconductor Corporation Open base bipolar transistor protective device
JPS6068721A (ja) * 1983-09-22 1985-04-19 Fujitsu Ltd Ｅｃｌ回路
JPS60253257A (ja) * 1984-05-29 1985-12-13 Sanyo Electric Co Ltd 半導体集積回路装置
JPS6364058A (ja) * 1986-09-05 1988-03-22 Canon Inc 画像形成装置

Also Published As

Publication number Publication date
CN1020027C (zh) 1993-03-03
DE4040070C2 (de) 1997-01-23
JPH0483374A (ja) 1992-03-17
JP2597753B2 (ja) 1997-04-09
TW198136B (cg-RX-API-DMAC10.html) 1993-01-11
CN1052573A (zh) 1991-06-26
KR910013586A (ko) 1991-08-08
DE4040070A1 (de) 1991-06-20

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