KR910013586A - Npn 트랜지스터의 래치전압을 이용한 정전내력향상 래터릴 pnp 트랜지스터 - Google Patents
Npn 트랜지스터의 래치전압을 이용한 정전내력향상 래터릴 pnp 트랜지스터 Download PDFInfo
- Publication number
- KR910013586A KR910013586A KR1019890018743A KR890018743A KR910013586A KR 910013586 A KR910013586 A KR 910013586A KR 1019890018743 A KR1019890018743 A KR 1019890018743A KR 890018743 A KR890018743 A KR 890018743A KR 910013586 A KR910013586 A KR 910013586A
- Authority
- KR
- South Korea
- Prior art keywords
- diffusion
- latch voltage
- electrostatic capacity
- collector
- npn transistors
- Prior art date
Links
- 238000009792 diffusion process Methods 0.000 claims 13
- 230000015556 catabolic process Effects 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 230000003068 static effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 수평 및 수직구조도.
제3도는 본 발명의 다른 수평 및 수직구조도,
제4도 (a)는 제2도의 등가회로, (b)는 제3도의 등가회로.
Claims (4)
- 래터럴 PNP 트랜지스터 P 디퓨젼 내에 n+디퓨젼을 각각 공통단자로 형성하여서 되는 NPN 트랜지스터의 콜렉터 이미터간의 래치전압으로, 상기 PNP 트랜지스터의 항복전압을 대신하게 하여 정전기의 방전로에 의한정전내력을 향상시킨 NPN 트랜지스터의 래치전압을 이용한 래터릴 PNP 트랜지스터.
- 제1항에 있어서, P 디퓨젼은 콜렉터용 P 디퓨전인 NPN 트랜지스터의 래치전압을 이용한 래터럴 PNP 트랜지스터.
- 제1항에 있어서, P 디퓨젼은 이미터용 P 디퓨젼인 NPN 트랜지스터의 래치전압을 이용한 래터럴 PNP 트랜지스터.
- 제1항에 있어서, P 디퓨젼은 콜렉터용 P 디퓨젼과 이미터용 P 디퓨젼이며 n+디퓨전이 콜렉터용 P 디퓨젼과 이미터용 P 디퓨젼에 각각 형성된 NPN 트랜지스터의 래치전압을 이용한 래터럴 PNP 트랜지스터.※ 참고사항 : 최초출된 내용에 의하여 공개하는 것임.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019890018743A KR920010596B1 (ko) | 1989-12-16 | 1989-12-16 | Npn 트랜지스터의 래치전압을 이용한 정전내력향상 래터럴 pnp 트랜지스터 |
TW079110351A TW198136B (ko) | 1989-12-16 | 1990-12-08 | |
DE4040070A DE4040070C2 (de) | 1989-12-16 | 1990-12-14 | PNP-Transistor mit einem Schutzelement zum Schutz vor statischer Elektrizität |
JP2402505A JP2597753B2 (ja) | 1989-12-16 | 1990-12-14 | Npnトランジスターのラッチ電圧を利用した静電耐力向上ラテラルpnpトランジスター |
CN90109971A CN1020027C (zh) | 1989-12-16 | 1990-12-15 | 一种利用npn晶体管锁闩电压的横向pnp晶体管 |
US07/860,271 US5237198A (en) | 1989-12-16 | 1992-04-01 | Lateral PNP transistor using a latch voltage of NPN transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019890018743A KR920010596B1 (ko) | 1989-12-16 | 1989-12-16 | Npn 트랜지스터의 래치전압을 이용한 정전내력향상 래터럴 pnp 트랜지스터 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910013586A true KR910013586A (ko) | 1991-08-08 |
KR920010596B1 KR920010596B1 (ko) | 1992-12-10 |
Family
ID=19293038
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890018743A KR920010596B1 (ko) | 1989-12-16 | 1989-12-16 | Npn 트랜지스터의 래치전압을 이용한 정전내력향상 래터럴 pnp 트랜지스터 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2597753B2 (ko) |
KR (1) | KR920010596B1 (ko) |
CN (1) | CN1020027C (ko) |
DE (1) | DE4040070C2 (ko) |
TW (1) | TW198136B (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10343681B4 (de) * | 2003-09-18 | 2007-08-09 | Atmel Germany Gmbh | Halbleiterstruktur und deren Verwendung, insbesondere zum Begrenzen von Überspannungen |
CN102280484B (zh) * | 2011-08-06 | 2015-06-03 | 深圳市稳先微电子有限公司 | 一种栅源和栅漏过压保护的晶体管功率器件及其制造方法 |
JP6077692B1 (ja) * | 2016-03-04 | 2017-02-08 | 伸興化成株式会社 | リサイクル可能な合成樹脂タイル及びその製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4291319A (en) * | 1976-05-19 | 1981-09-22 | National Semiconductor Corporation | Open base bipolar transistor protective device |
JPS6068721A (ja) * | 1983-09-22 | 1985-04-19 | Fujitsu Ltd | Ecl回路 |
JPS60253257A (ja) * | 1984-05-29 | 1985-12-13 | Sanyo Electric Co Ltd | 半導体集積回路装置 |
JPS6364058A (ja) * | 1986-09-05 | 1988-03-22 | Canon Inc | 画像形成装置 |
-
1989
- 1989-12-16 KR KR1019890018743A patent/KR920010596B1/ko not_active IP Right Cessation
-
1990
- 1990-12-08 TW TW079110351A patent/TW198136B/zh active
- 1990-12-14 DE DE4040070A patent/DE4040070C2/de not_active Expired - Lifetime
- 1990-12-14 JP JP2402505A patent/JP2597753B2/ja not_active Expired - Lifetime
- 1990-12-15 CN CN90109971A patent/CN1020027C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE4040070C2 (de) | 1997-01-23 |
CN1052573A (zh) | 1991-06-26 |
DE4040070A1 (de) | 1991-06-20 |
KR920010596B1 (ko) | 1992-12-10 |
JP2597753B2 (ja) | 1997-04-09 |
CN1020027C (zh) | 1993-03-03 |
TW198136B (ko) | 1993-01-11 |
JPH0483374A (ja) | 1992-03-17 |
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