KR920007126A - 진공막 형성장치 - Google Patents

진공막 형성장치 Download PDF

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Publication number
KR920007126A
KR920007126A KR1019910015794A KR910015794A KR920007126A KR 920007126 A KR920007126 A KR 920007126A KR 1019910015794 A KR1019910015794 A KR 1019910015794A KR 910015794 A KR910015794 A KR 910015794A KR 920007126 A KR920007126 A KR 920007126A
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KR
South Korea
Prior art keywords
vacuum
substrate
film forming
forming apparatus
vacuum chamber
Prior art date
Application number
KR1019910015794A
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English (en)
Other versions
KR950007966B1 (ko
Inventor
아케다가와 겐이치
사카이 쥰로
무라카미 순이치
무로타 히로요시
타츠미 토루
Original Assignee
스스무 야스다
아넬바 코오포레이션
야스쿠니 고타카
엔 이 시 코오포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 스스무 야스다, 아넬바 코오포레이션, 야스쿠니 고타카, 엔 이 시 코오포레이션 filed Critical 스스무 야스다
Publication of KR920007126A publication Critical patent/KR920007126A/ko
Application granted granted Critical
Publication of KR950007966B1 publication Critical patent/KR950007966B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

내용 없음

Description

진공막 형성장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 진공막 형성장치의 실시예를 일불 단면으로 도시한 정면도.

Claims (9)

  1. 제1, 제2진공 챔버 공간을 갖는 진공용기와, 상기 제1진공챔버와 상지 제2진공챔버 각각으로 통하는 제1 및 제2진공배기 수단과, 상기 제2진공 챔버에 설치된 기판 가열수단과, 상기 제2진공 챔버에 설치된 가스 공급수단과, 기판의 막 형성면을 제2진공 챔버를 향하여 홀딩하고, 상기 기판과 함께 상기 제1, 제2 진공챔버를 분리하는 위치로 배치되는 기판 혼딩 수단으로 구성함을 특징으로 하는 진공막 형성장치.
  2. 제1항에 있어서, 상기 기판 홀딩 수단은 상기 기판을 밀착 홀딩하고, 상하 방향으로 이동가능하며, 상기 진공용기의 내벽에 설치된 상기 제1및 제2진공챔버를 분리하는 위치에 설치된 단절용의 부재로 밀착시키는 부재임을 특징으로 하는 진공막 형성장치.
  3. 제1항에 있어서, 상기 기판 홀딩 수단을 형성하는 재료가 이 기판상에 증착하는 박막과 동일 재료로서 구성됨을 특징으로 하는 진공막 형성장치.
  4. 제1항에 있어서, 상기 기판 홀딩 수단을 이동시켜 기판을 교환하기 위해, 상기 진공유기의 대기측으로 조작 가능하게 운동 도입수단을 설치한 것을 특징으로 하는 진공막 형성장치.
  5. 제1항에 있어서, 상기 기판 가열수단이 대기 히터임을 특징으로 하는 진공막 형성장치.
  6. 제1항에 있어서, 상기 가스 공급수단이 상기 기판을 향하여 가스를 방출하는 노즐임을 특징으로 하는 진공막 형성장치.
  7. 제1항에 있어서, 상기 제1진공챔버와 제2진공챔버의 각각에 설치된 진공배기 수단이 터보 분자 펌프임을 특징으로 하는 진공막 형성장치.
  8. 제1항에 있어서, 상기 제1진공 챔버에 설치된 진공 배기 수단의 배기 능력은 상기 제2진공 챔버에 설치된 상기 진공 배기 수단의 배기 능력보다 작도록 함을 특징으로 하는 진공막 형성장치.
  9. 제1항에 있어서, 상기 기판상에 증착하는 박막이 에피텍셜 Si박막임을 특징으로 하는 진공막 형성장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910015794A 1990-09-21 1991-09-10 진공막 형성장치 KR950007966B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25319190 1990-09-21
JP253191/1990 1990-09-21

Publications (2)

Publication Number Publication Date
KR920007126A true KR920007126A (ko) 1992-04-28
KR950007966B1 KR950007966B1 (ko) 1995-07-21

Family

ID=17247818

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910015794A KR950007966B1 (ko) 1990-09-21 1991-09-10 진공막 형성장치

Country Status (5)

Country Link
US (1) US5284521A (ko)
EP (1) EP0476480B1 (ko)
KR (1) KR950007966B1 (ko)
CA (1) CA2051214C (ko)
DE (1) DE69111540T2 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0811718B2 (ja) * 1992-02-27 1996-02-07 大同ほくさん株式会社 ガスソース分子線エピタキシー装置
US5534072A (en) * 1992-06-24 1996-07-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing subtrates
JP3604706B2 (ja) * 1992-07-23 2004-12-22 キヤノン株式会社 成膜方法
KR100200705B1 (ko) * 1996-06-08 1999-06-15 윤종용 반도체 디바이스 제조장치, 제조장치의 공정 조건 조절방법 및 이를 이용한 커패시터 제조방법
DE19847101C1 (de) * 1998-10-13 2000-05-18 Wacker Siltronic Halbleitermat CVD-Reaktor und Verfahren zur Herstellung einer mit einer epitaktischen Schicht versehenen Halbleiterscheibe
DE19924649B4 (de) 1999-05-28 2004-08-05 Siltronic Ag Halbleiterscheiben mit Kristallgitter-Defekten und Verfahren zur Herstellung derselben
US20050037521A1 (en) * 2003-08-15 2005-02-17 Uwe Wellhausen Methods and apparatus for processing semiconductor devices by gas annealing
US20060260938A1 (en) * 2005-05-20 2006-11-23 Petrach Philip M Module for Coating System and Associated Technology
US20070256934A1 (en) * 2006-05-08 2007-11-08 Perata Michael R Apparatus and Method for Coating Substrates With Approximate Process Isolation

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL286507A (ko) * 1961-12-11
US3394678A (en) * 1966-12-23 1968-07-30 Air Reduction Apparatus for vacuum coating
US4767251A (en) * 1986-05-06 1988-08-30 Amtech Systems, Inc. Cantilever apparatus and method for loading wafer boats into cantilever diffusion tubes
JPS63238263A (ja) * 1987-03-25 1988-10-04 Seiko Epson Corp 真空成膜装置のゴミ防止板
JPS6411320A (en) * 1987-07-06 1989-01-13 Toshiba Corp Photo-cvd device
FR2621930B1 (fr) * 1987-10-15 1990-02-02 Solems Sa Procede et appareil pour la production par plasma de couches minces a usage electronique et/ou optoelectronique
JPH01257322A (ja) * 1987-11-30 1989-10-13 Daido Sanso Kk 半導体の製造方法
DE3885243T2 (de) * 1987-11-30 1994-05-11 Daido Oxygen Vorrichtung und ihre Verwendung zur Herstellung von Halbleitern.
JP2543961B2 (ja) * 1987-11-30 1996-10-16 大同ほくさん株式会社 半導体製造装置
JP2528165B2 (ja) * 1987-11-30 1996-08-28 大同ほくさん株式会社 半導体製造装置
JP2612602B2 (ja) * 1987-12-17 1997-05-21 東洋インキ製造 株式会社 連続蒸着フィルムの製造方法および装置
US5104694A (en) * 1989-04-21 1992-04-14 Nippon Telephone & Telegraph Corporation Selective chemical vapor deposition of a metallic film on the silicon surface
US5180432A (en) * 1990-01-08 1993-01-19 Lsi Logic Corporation Apparatus for conducting a refractory metal deposition process

Also Published As

Publication number Publication date
DE69111540T2 (de) 1996-03-28
US5284521A (en) 1994-02-08
EP0476480B1 (en) 1995-07-26
KR950007966B1 (ko) 1995-07-21
CA2051214A1 (en) 1992-03-22
CA2051214C (en) 1998-11-24
DE69111540D1 (de) 1995-08-31
EP0476480A1 (en) 1992-03-25

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