DE69111540D1 - Vorrichtung zum Herstellen einer Schicht im Vacuum. - Google Patents

Vorrichtung zum Herstellen einer Schicht im Vacuum.

Info

Publication number
DE69111540D1
DE69111540D1 DE69111540T DE69111540T DE69111540D1 DE 69111540 D1 DE69111540 D1 DE 69111540D1 DE 69111540 T DE69111540 T DE 69111540T DE 69111540 T DE69111540 T DE 69111540T DE 69111540 D1 DE69111540 D1 DE 69111540D1
Authority
DE
Germany
Prior art keywords
vacuum
producing
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69111540T
Other languages
English (en)
Other versions
DE69111540T2 (de
Inventor
Ken-Ichi C O Anelva Aketagawa
Junro C O Anelva Corpora Sakai
Shun-Ichi C O Anelva Murakami
Hiroyoshi C O Anelva Co Murota
Toru Tatsumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
NEC Corp
Original Assignee
NEC Corp
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Anelva Corp filed Critical NEC Corp
Publication of DE69111540D1 publication Critical patent/DE69111540D1/de
Application granted granted Critical
Publication of DE69111540T2 publication Critical patent/DE69111540T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE69111540T 1990-09-21 1991-09-10 Vorrichtung zum Herstellen einer Schicht im Vacuum. Expired - Lifetime DE69111540T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25319190 1990-09-21

Publications (2)

Publication Number Publication Date
DE69111540D1 true DE69111540D1 (de) 1995-08-31
DE69111540T2 DE69111540T2 (de) 1996-03-28

Family

ID=17247818

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69111540T Expired - Lifetime DE69111540T2 (de) 1990-09-21 1991-09-10 Vorrichtung zum Herstellen einer Schicht im Vacuum.

Country Status (5)

Country Link
US (1) US5284521A (de)
EP (1) EP0476480B1 (de)
KR (1) KR950007966B1 (de)
CA (1) CA2051214C (de)
DE (1) DE69111540T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0811718B2 (ja) * 1992-02-27 1996-02-07 大同ほくさん株式会社 ガスソース分子線エピタキシー装置
US5534072A (en) * 1992-06-24 1996-07-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing subtrates
JP3604706B2 (ja) * 1992-07-23 2004-12-22 キヤノン株式会社 成膜方法
KR100200705B1 (ko) * 1996-06-08 1999-06-15 윤종용 반도체 디바이스 제조장치, 제조장치의 공정 조건 조절방법 및 이를 이용한 커패시터 제조방법
DE19847101C1 (de) * 1998-10-13 2000-05-18 Wacker Siltronic Halbleitermat CVD-Reaktor und Verfahren zur Herstellung einer mit einer epitaktischen Schicht versehenen Halbleiterscheibe
DE19924649B4 (de) 1999-05-28 2004-08-05 Siltronic Ag Halbleiterscheiben mit Kristallgitter-Defekten und Verfahren zur Herstellung derselben
US20050037521A1 (en) * 2003-08-15 2005-02-17 Uwe Wellhausen Methods and apparatus for processing semiconductor devices by gas annealing
US20060260938A1 (en) * 2005-05-20 2006-11-23 Petrach Philip M Module for Coating System and Associated Technology
US20070256934A1 (en) * 2006-05-08 2007-11-08 Perata Michael R Apparatus and Method for Coating Substrates With Approximate Process Isolation

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL286507A (de) * 1961-12-11
US3394678A (en) * 1966-12-23 1968-07-30 Air Reduction Apparatus for vacuum coating
US4767251A (en) * 1986-05-06 1988-08-30 Amtech Systems, Inc. Cantilever apparatus and method for loading wafer boats into cantilever diffusion tubes
JPS63238263A (ja) * 1987-03-25 1988-10-04 Seiko Epson Corp 真空成膜装置のゴミ防止板
JPS6411320A (en) * 1987-07-06 1989-01-13 Toshiba Corp Photo-cvd device
FR2621930B1 (fr) * 1987-10-15 1990-02-02 Solems Sa Procede et appareil pour la production par plasma de couches minces a usage electronique et/ou optoelectronique
JP2543961B2 (ja) * 1987-11-30 1996-10-16 大同ほくさん株式会社 半導体製造装置
EP0319122B1 (de) * 1987-11-30 1993-10-27 Daidousanso Co., Ltd. Vorrichtung und ihre Verwendung zur Herstellung von Halbleitern
JP2528165B2 (ja) * 1987-11-30 1996-08-28 大同ほくさん株式会社 半導体製造装置
JPH01257322A (ja) * 1987-11-30 1989-10-13 Daido Sanso Kk 半導体の製造方法
JP2612602B2 (ja) * 1987-12-17 1997-05-21 東洋インキ製造 株式会社 連続蒸着フィルムの製造方法および装置
US5104694A (en) * 1989-04-21 1992-04-14 Nippon Telephone & Telegraph Corporation Selective chemical vapor deposition of a metallic film on the silicon surface
US5180432A (en) * 1990-01-08 1993-01-19 Lsi Logic Corporation Apparatus for conducting a refractory metal deposition process

Also Published As

Publication number Publication date
KR920007126A (ko) 1992-04-28
CA2051214A1 (en) 1992-03-22
DE69111540T2 (de) 1996-03-28
CA2051214C (en) 1998-11-24
KR950007966B1 (ko) 1995-07-21
EP0476480A1 (de) 1992-03-25
EP0476480B1 (de) 1995-07-26
US5284521A (en) 1994-02-08

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