KR860006566A - 금속박막의 형성방법 및 그 형성장치 - Google Patents

금속박막의 형성방법 및 그 형성장치 Download PDF

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KR860006566A
KR860006566A KR1019850009892A KR850009892A KR860006566A KR 860006566 A KR860006566 A KR 860006566A KR 1019850009892 A KR1019850009892 A KR 1019850009892A KR 850009892 A KR850009892 A KR 850009892A KR 860006566 A KR860006566 A KR 860006566A
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thin film
metal thin
electric
forming
growth
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KR1019850009892A
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KR900000300B1 (ko
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히로시 하라다
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시기 모리야
미쓰비시뎅기 가부시끼가이샤
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/12—Deposition of aluminium only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0073—Reactive sputtering by exposing the substrates to reactive gases intermittently
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y10T428/24967—Absolute thicknesses specified

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

내용 없음

Description

금속박막의 형성방법 및 그 형성장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예이고 스퍼터링(sputtering)에 따라 Si 웨이퍼(wafer)위에 Al 박막을 형성할 경우의 스퍼터링 장치를 나타낸 도면.
제2도는 본발명의 실시예인 금속박막의 형성방법에 있어서 진공조에 O2가스를 도입하는 시이퀸스(sequence) 도면.
제3도는 본 발명의 실시예인 금속박막의 형성방법에 따라 Si 웨이퍼 위에 형성된 Al 박막의 모식 단면도.
*도면의 주요부분에 대한 부호의 설명
1 : 진공조 2 : 음전극 3 : 양전극 4 : Si웨이퍼 5 : 직류전원 6,6' : Al박막 7 : 히이터 8 : 교류전원 9,11 : 진공밸브 10 : 산화막 12,12' : 결정립 13,13' : 결정입계 14,14' : Al과 O2가스의 반응층
(도면중 동일부호는 동일 또는 상당부분분을 표시한다)

Claims (4)

  1. 기판위에 금속박막을 형성하는 경우에 있어서 전기금속박막의 성장도중 미리 정한 기간에 전기금속 박막과 반응성을 갖는 가스를 미량으로 전기금속박막의 형성분위기중에 도입하면서 전기금속박막을 형성하는 것을 특징으로 하는 금속박막의 형성방법.
  2. 제1항에 있어서 스퍼터링, 진공증착, 또는 화학기상 성장에서 형성되는 것을 특징으로 하는 금속박막의 형성방법.
  3. 그 표면에 금속박막을 형성하여야 하는 기판을 넣는 용기와 전기 용기내에 있어서 전기기판의 전기표면에 전기금속박막의 재료를 미립자상으로 부착하기 위한 부착수단과 전기 금속박막의 성장도중, 미리 정한 기간에 전기 금속박막과 반응성을 갖는 가스를 미량으로 전기 용기내의 전기 금속박막 형성분위기중에 도입하는 가스도입 수단을 구비한 것을 특징으로하는 금속 박막 형성장치.
  4. 제3항에 있어서, 스퍼터링, 진공증착, 또는 화학기상 성장에서 형성되는 것을 특징으로 하는 금속박막 형성장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019850009892A 1985-02-20 1985-12-27 금속엷은 막의 형성방법 및 그 형성장치 KR900000300B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP60-33725 1985-02-20
JP33725 1985-02-20
JP60033725A JPH0799739B2 (ja) 1985-02-20 1985-02-20 金属薄膜の形成方法

Publications (2)

Publication Number Publication Date
KR860006566A true KR860006566A (ko) 1986-09-13
KR900000300B1 KR900000300B1 (ko) 1990-01-25

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US (1) US4726983A (ko)
JP (1) JPH0799739B2 (ko)
KR (1) KR900000300B1 (ko)
DE (1) DE3604741A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240085386A (ko) * 2022-12-08 2024-06-17 충북대학교 산학협력단 ZnO 박막 제조방법, 및 이에 기반한 구조색 발현체의 제조방법

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US4906524A (en) * 1987-05-29 1990-03-06 Orient Watch Co., Ltd. Surface-coated article and a method for the preparation thereof
US4985371A (en) * 1988-12-09 1991-01-15 At&T Bell Laboratories Process for making integrated-circuit device metallization
JP2850393B2 (ja) * 1988-12-15 1999-01-27 株式会社デンソー アルミニウム配線及びその製造方法
DE4000664A1 (de) * 1990-01-11 1991-07-18 Siemens Ag Transparente elektrode aus leitfaehigem oxid fuer photodioden und verfahren zu ihrer herstellung
KR970072057A (ko) * 1996-04-04 1997-11-07 윌리엄 비. 켐플러 반도체 제조 공정시 입자 성장을 제어하는 방법
US6222271B1 (en) * 1997-07-15 2001-04-24 Micron Technology, Inc. Method of using hydrogen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom
US5969423A (en) * 1997-07-15 1999-10-19 Micron Technology, Inc. Aluminum-containing films derived from using hydrogen and oxygen gas in sputter deposition
US7675174B2 (en) * 2003-05-13 2010-03-09 Stmicroelectronics, Inc. Method and structure of a thick metal layer using multiple deposition chambers
WO2011032074A1 (en) 2009-09-11 2011-03-17 Avery Dennison Corporation Dual crosslinked tackified pressure sensitive adhesive

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US3631304A (en) * 1970-05-26 1971-12-28 Cogar Corp Semiconductor device, electrical conductor and fabrication methods therefor
US4381595A (en) * 1979-10-09 1983-05-03 Mitsubishi Denki Kabushiki Kaisha Process for preparing multilayer interconnection
JPS5771131A (en) * 1980-10-22 1982-05-01 Mitsubishi Electric Corp Formation of conductor for aluminum electrode
US4364995A (en) * 1981-02-04 1982-12-21 Minnesota Mining And Manufacturing Company Metal/metal oxide coatings
JPS58158918A (ja) * 1982-03-16 1983-09-21 Nippon Telegr & Teleph Corp <Ntt> 金属窒化物薄膜の製造方法
JPS60171277A (ja) * 1984-02-17 1985-09-04 株式会社東芝 金属−セラミツクス接合体
US4590130A (en) * 1984-03-26 1986-05-20 General Electric Company Solid state zone recrystallization of semiconductor material on an insulator

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240085386A (ko) * 2022-12-08 2024-06-17 충북대학교 산학협력단 ZnO 박막 제조방법, 및 이에 기반한 구조색 발현체의 제조방법

Also Published As

Publication number Publication date
KR900000300B1 (ko) 1990-01-25
US4726983A (en) 1988-02-23
DE3604741A1 (de) 1986-08-21
JPH0799739B2 (ja) 1995-10-25
JPS61193441A (ja) 1986-08-27

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