KR900013101A - 저압 증기상 성장장치 - Google Patents

저압 증기상 성장장치 Download PDF

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Publication number
KR900013101A
KR900013101A KR1019900001259A KR900001259A KR900013101A KR 900013101 A KR900013101 A KR 900013101A KR 1019900001259 A KR1019900001259 A KR 1019900001259A KR 900001259 A KR900001259 A KR 900001259A KR 900013101 A KR900013101 A KR 900013101A
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KR
South Korea
Prior art keywords
gas
substrate
light
low pressure
vapor phase
Prior art date
Application number
KR1019900001259A
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English (en)
Other versions
KR920007848B1 (ko
Inventor
시게루 미즈노
이사무 모리사꼬
Original Assignee
야스다 스스무
니찌덴 아넬바 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 야스다 스스무, 니찌덴 아넬바 가부시끼가이샤 filed Critical 야스다 스스무
Publication of KR900013101A publication Critical patent/KR900013101A/ko
Application granted granted Critical
Publication of KR920007848B1 publication Critical patent/KR920007848B1/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

내용 없음

Description

저압 증기상 성장장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 저압증기상 성장장치의 실시예의 개략단면도. 제2도는 종래의 저압증기상 성장장치의 개략단면도.

Claims (2)

  1. 투광성물질로 만들어진 창, 반응성 기체를 공급하기 위한 기체공급기, 화학반응후 기체를 뿜어내기 위한 배출기, 복사선을 방출하여 상기 투광성창을 통해 투과되도록 하는 기판의 복사가열을 실행하기 위한 램프 및 상기 투광성 창을 강제 냉각시키기 위한 냉각 메카니즘으로 이루어지는 저압증기상 성장장치에 있어서, 상기 기판과 상기 투광성창은 그들간의 틈이 기껏해야 이틈에 존재하는 기체의 평규자유행로의 폭을 가지면서 상호 접촉없이 유지되며, 상기 기체공급기를 통해 공급된 상기 반응성 기체가 상기 기판의 겉 표면에서 상기 화학반응을 당하여 거기에 박막을 형성하는 것을 특징으로 하는 장치.
  2. 제1항에 있어서, 상기 틈에 존재하는 상기 기체로서 비활성 기체가 사용되는 것을 특징으로 하는 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900001259A 1989-02-14 1990-02-02 저압증기상 성장장치 KR920007848B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1-34826 1989-02-14
JP1034826A JP2731855B2 (ja) 1989-02-14 1989-02-14 減圧気相成長装置

Publications (2)

Publication Number Publication Date
KR900013101A true KR900013101A (ko) 1990-09-03
KR920007848B1 KR920007848B1 (ko) 1992-09-18

Family

ID=12425006

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900001259A KR920007848B1 (ko) 1989-02-14 1990-02-02 저압증기상 성장장치

Country Status (4)

Country Link
US (1) US5033407A (ko)
EP (1) EP0383491A3 (ko)
JP (1) JP2731855B2 (ko)
KR (1) KR920007848B1 (ko)

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Also Published As

Publication number Publication date
JPH02213477A (ja) 1990-08-24
EP0383491A2 (en) 1990-08-22
JP2731855B2 (ja) 1998-03-25
US5033407A (en) 1991-07-23
KR920007848B1 (ko) 1992-09-18
EP0383491A3 (en) 1990-11-28

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