KR910021121A - Ccd 영상소자의 4필드 클럭킹용 구조 - Google Patents

Ccd 영상소자의 4필드 클럭킹용 구조 Download PDF

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Publication number
KR910021121A
KR910021121A KR1019900006731A KR900006731A KR910021121A KR 910021121 A KR910021121 A KR 910021121A KR 1019900006731 A KR1019900006731 A KR 1019900006731A KR 900006731 A KR900006731 A KR 900006731A KR 910021121 A KR910021121 A KR 910021121A
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KR
South Korea
Prior art keywords
vccd
photodiodes
field
image device
ccd image
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KR1019900006731A
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English (en)
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KR930002818B1 (ko
Inventor
이성민
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문정환
금성일렉트론 주식회사
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Priority to KR1019900006731A priority Critical patent/KR930002818B1/ko
Priority to DE4115227A priority patent/DE4115227B4/de
Priority to FR9105704A priority patent/FR2662853B1/fr
Priority to GB9110088A priority patent/GB2244863B/en
Priority to NL9100826A priority patent/NL9100826A/nl
Priority to JP3107579A priority patent/JP2524434B2/ja
Publication of KR910021121A publication Critical patent/KR910021121A/ko
Priority to US08/032,429 priority patent/US5280186A/en
Application granted granted Critical
Publication of KR930002818B1 publication Critical patent/KR930002818B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/42—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by switching between different modes of operation using different resolutions or aspect ratios, e.g. switching between interlaced and non-interlaced mode
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

내용 없음

Description

CCD 영상소자의 4필드 클럭킹용 구조
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1A도는 종래 CCD 영상소자의 구성도.
제1B도는 제1A도의 A-A'선 단면도.
제1C도는 종래의 클럭신호도.
제1D도는 종래의 영상전하 흐름도.
제1E도는 종래의 영상표현도.
제2A도는 본 발명의 CCD영상소자의 구성도.
제2B도는 제1a도의 A-A'선 단면도.
제2C도는 본 발명의 클럭신호도.
제2D도는 본 발명의 영상전하 흐름도.
제2E도는 본 발명의 영상표현도.

Claims (2)

  1. 하나의 VCCD 채널 좌, 우측에 2개에 포토다이오우드(PD)가 각각 하나씩 연결되고 VCCD채널이 없는곳의 포토다이오우드(PD)는 필드산화막(1)을 통해 서로 연결되며, 이 좌, 우측 포토다이오우드(PD)들은 각각 VCCD 클럭신호(VO1), (VO3)용 폴리게이트(PG1)와 VCCD 클럭신호(VO2), (VO4)용 폴리게이트(PG2)에 공통으로 형성되고 VCCD를 중심으로 좌측 상, 하단 및 우측 상, 하단의 포토다이오우드(PD)에는 트랜스퍼 게이트(TG1), (TG2), (TG3), (TG4)가 차례로 각각 연결되고 이 트랜스피 게이트(TG1), (TG2), (TG3), (TG4)는 4필트클럭 방식으로 VCCD 클럭신호(VO1), (VO2), (VO3), (VO4)에 대응하여 이들이 하이전압 상태일때 열리도록 구성함을 특징으로 하는 CCD영상소자의 4필드 클럭킹용 구조.
  2. 제1항에 있어서, VCCD까지를 가상 포토다이오우드(PD)로 하여 좌, 우측 포토다이오우드(PD)로부터 출력된 영상신호의 합을 이등분하여 HCCD로 전송하도록 구성함을 특징으로 하는 CCD영상소자의 4필트 클럭킹용 구조.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900006731A 1990-05-11 1990-05-11 Ccd 영상소자 KR930002818B1 (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1019900006731A KR930002818B1 (ko) 1990-05-11 1990-05-11 Ccd 영상소자
DE4115227A DE4115227B4 (de) 1990-05-11 1991-05-10 CCD-Bildwandler mit vier Taktsignalen
FR9105704A FR2662853B1 (fr) 1990-05-11 1991-05-10 Detecteur d'image a dispositif a couplage de charge.
GB9110088A GB2244863B (en) 1990-05-11 1991-05-10 CCD Image sensor
NL9100826A NL9100826A (nl) 1990-05-11 1991-05-13 Ccd-beeldsensor.
JP3107579A JP2524434B2 (ja) 1990-05-11 1991-05-13 Ｃｃｄ映像素子
US08/032,429 US5280186A (en) 1990-05-11 1993-03-15 CCD image sensor with four phase clocking mechanism

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900006731A KR930002818B1 (ko) 1990-05-11 1990-05-11 Ccd 영상소자

Publications (2)

Publication Number Publication Date
KR910021121A true KR910021121A (ko) 1991-12-20
KR930002818B1 KR930002818B1 (ko) 1993-04-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900006731A KR930002818B1 (ko) 1990-05-11 1990-05-11 Ccd 영상소자

Country Status (7)

Country Link
US (1) US5280186A (ko)
JP (1) JP2524434B2 (ko)
KR (1) KR930002818B1 (ko)
DE (1) DE4115227B4 (ko)
FR (1) FR2662853B1 (ko)
GB (1) GB2244863B (ko)
NL (1) NL9100826A (ko)

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KR930009132A (ko) * 1991-10-04 1993-05-22 김광호 고체 촬영 소자
US6248133B1 (en) * 1994-06-17 2001-06-19 Matsushita Electric Industrial Co., Ltd. Solid state imaging device and a method of driving the same
US5900654A (en) * 1995-07-17 1999-05-04 Spratt; James P. Radiation hardened charge coupled device
US5614950A (en) * 1995-08-02 1997-03-25 Lg Semicon Co., Ltd. CCD image sensor and method of preventing a smear phenomenon in the sensor
EP0765086A2 (en) 1995-09-21 1997-03-26 AT&T Corp. Video camera including multiple image sensors
KR0186195B1 (ko) * 1995-12-11 1999-05-01 문정환 컬러선형 전하결합소자 및 이의 구동방법
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US6087685A (en) * 1996-12-12 2000-07-11 Sony Corporation Solid-state imaging device
US6107655A (en) * 1997-08-15 2000-08-22 Eastman Kodak Company Active pixel image sensor with shared amplifier read-out
GB2338080B (en) 1998-06-05 2003-05-21 Imco Electro Optics Ltd Imaging arrangement and method
US6765699B1 (en) 2000-10-31 2004-07-20 Hewlett-Packard Development Company, L.P. Photosensor array with decreased scan time for decreased optical sampling rates
JP4527027B2 (ja) * 2005-08-11 2010-08-18 富士フイルム株式会社 撮像装置および撮像方法
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JP2010123707A (ja) * 2008-11-19 2010-06-03 Sony Corp 固体撮像装置およびその読み出し方法

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JPS5377131A (en) * 1976-11-26 1978-07-08 Sony Corp Solid state pick up unit
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Also Published As

Publication number Publication date
US5280186A (en) 1994-01-18
JPH05344425A (ja) 1993-12-24
KR930002818B1 (ko) 1993-04-10
JP2524434B2 (ja) 1996-08-14
DE4115227B4 (de) 2006-06-29
DE4115227A1 (de) 1992-04-30
NL9100826A (nl) 1991-12-02
GB9110088D0 (en) 1991-07-03
GB2244863A (en) 1991-12-11
FR2662853A1 (fr) 1991-12-06
FR2662853B1 (fr) 1996-12-27
GB2244863B (en) 1994-08-03

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