KR910020928A - 바이폴라 트랜지스터의 제조방법 - Google Patents

바이폴라 트랜지스터의 제조방법 Download PDF

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Publication number
KR910020928A
KR910020928A KR1019900006561A KR900006561A KR910020928A KR 910020928 A KR910020928 A KR 910020928A KR 1019900006561 A KR1019900006561 A KR 1019900006561A KR 900006561 A KR900006561 A KR 900006561A KR 910020928 A KR910020928 A KR 910020928A
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South Korea
Prior art keywords
layer
oxide film
manufacturing
grown
electrode
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Application number
KR1019900006561A
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English (en)
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KR930001558B1 (ko
Inventor
여행구
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문정환
금성일렉트론 주식회사
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Priority to KR1019900006561A priority Critical patent/KR930001558B1/ko
Publication of KR910020928A publication Critical patent/KR910020928A/ko
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Publication of KR930001558B1 publication Critical patent/KR930001558B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

내용 없음

Description

바이폴라 트랜지스터의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (1)

1. 바이폴라 트랜지스터 제조방법에 있어서, 실리콘기판(1)에 홈을 판 후 산화막(2)를 입히고, 홈 밑면에 상기 실리콘기판(1)과 접촉하도록 1차N에 피텍셜층(3)을 성장시킨후 그의 상부에 콜렉터 영역으로 사용하기 위한 N+매입층(4)을 형성시키며, 상기 N+매입층(4)위에 2차N에피텍셜층(5)을 성장치켜 홈의 가장자리 벽에 상기 N+매입층(4)과 연결되는 콜렉터 전극을 위한 N+폴리층(4')을 형성시키고, 그 위에 베이스영역을 위한 P+에피텍셜층(6)을 성장시켜 상기 산화막(2)위에는 베이스전극을 위한 P+폴리층(6')을 형성시킨 후 분리산화막(7)을 성장시키고, 에미터영역을 위한 N+폴리층(8)을 증착시켜 그 위에 산화막(9)을 증착한 후 각 전극 콘텍을 형성하는 베이스(B), 에미터(E), 및 콜렉터(C)전극을 증착하여 제조하는 것을 특징으로 하는 바이폴라 트래니지스터의 제조방법.
※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900006561A 1990-05-09 1990-05-09 바이폴라 트렌지스터의 제조방법. KR930001558B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900006561A KR930001558B1 (ko) 1990-05-09 1990-05-09 바이폴라 트렌지스터의 제조방법.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900006561A KR930001558B1 (ko) 1990-05-09 1990-05-09 바이폴라 트렌지스터의 제조방법.

Publications (2)

Publication Number Publication Date
KR910020928A true KR910020928A (ko) 1991-12-20
KR930001558B1 KR930001558B1 (ko) 1993-03-04

Family

ID=19298827

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900006561A KR930001558B1 (ko) 1990-05-09 1990-05-09 바이폴라 트렌지스터의 제조방법.

Country Status (1)

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KR (1) KR930001558B1 (ko)

Also Published As

Publication number Publication date
KR930001558B1 (ko) 1993-03-04

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