KR910020804A - 열처리 장치 - Google Patents
열처리 장치 Download PDFInfo
- Publication number
- KR910020804A KR910020804A KR1019910007381A KR910007381A KR910020804A KR 910020804 A KR910020804 A KR 910020804A KR 1019910007381 A KR1019910007381 A KR 1019910007381A KR 910007381 A KR910007381 A KR 910007381A KR 910020804 A KR910020804 A KR 910020804A
- Authority
- KR
- South Korea
- Prior art keywords
- heat treatment
- treatment apparatus
- heating wire
- inner cover
- heat
- Prior art date
Links
- 238000010438 heat treatment Methods 0.000 title claims description 34
- 239000004020 conductor Substances 0.000 claims 4
- 238000001816 cooling Methods 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- 229910000838 Al alloy Inorganic materials 0.000 claims 2
- 238000001514 detection method Methods 0.000 claims 2
- 239000010935 stainless steel Substances 0.000 claims 2
- 229910001220 stainless steel Inorganic materials 0.000 claims 2
- 238000004804 winding Methods 0.000 claims 2
- 239000011810 insulating material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D11/00—Arrangement of elements for electric heating in or on furnaces
- F27D11/02—Ohmic resistance heating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D1/00—Casings; Linings; Walls; Roofs
- F27D1/0003—Linings or walls
- F27D1/0036—Linings or walls comprising means for supporting electric resistances in the furnace
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/62—Heating elements specially adapted for furnaces
- H05B3/66—Supports or mountings for heaters on or in the wall or roof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Resistance Heating (AREA)
- Furnace Details (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예에 관한 열처리 장치(종형 CVD 장치)의 전체 개요를 나타내는 종단면도, 제2도는, 가열장치의 로의 부분을 절결하여 나타낸 구성 블록도.
Claims (14)
- 용기를 둘러싸도록 형성된 발열선(40)과, 이 발열선(40)이 지지된 내열 블록부재(31)와, 상기 내열 블록부재(31)의 바깥쪽에 형성되고, 열전도성 재료로 만들어진 안쪽 커버(34)와, 상기 안쪽 커버(34)의 바깥쪽에 형성된 냉각수단(35)과 상기 냉각수단(35)의 바깥쪽에 형성되고, 열전도성 재료로 만들어진 바깥쪽 커버(38)와, 상기 발열선(40)에 전력을 공급하는 끝단부에 전기적으로 접속되고, 상기 안쪽커버(34)에 대하여 실질적으로 프리하게 형성된 단자와, 상기 단자에 전기적으로 접속되고, 상기 발열선(40)에 전류를 공급하는 전원(60)과를 구비하여 이루어지는 가열장치.
- 제1항에 있어서, 금속제플랜지(32)가, 상기 내열블록 부재(31)의 개구 끝단부에서 상기 안쪽커버(34) 및 바깥쪽 커버(38)의 양자에 가능하도록 접합되어 있는 열처리 장치.
- 제2항에 있어서, 금속제플랜지(32)가, 알루미늄 합금으로 만들어지는 열처리 장치.
- 제2항에 있어서, 금속제플랜지(32)가, 스테인레스 강으로 만들어지는 열처리 장치.
- 제1항에 있어서, 안쪽커버(34) 및 바깥쪽 커버(38)가, 알루미늄 합금으로 만들어지는 열처리 장치.
- 제1항에 있어서, 안쪽커버(34) 및 바깥쪽 커버(38)가, 스테인레스 강으로 만들어지는 열처리 장치.
- 제1항에 있어서, 상기 저항 발열선(40)이, 코일 형상으로 형성되고, 코일의 감은 피치가, 열처리 영역의 위치에 따라 변화되는 열처리 장치.
- 제7항에 있어서, 상기 열처리 영역이, 3개의 영역으로 이루어지며, 3개의 영역중 중앙영역에 위치하는 저항 발열선의 감은 피치가, 다른 영역에 위치하는 저항 발열선의 감은 피치보다 큰 열처리 장치.
- 제1항에 있어서, 상기 안쪽커버(34)와 상기 내열블록 부재(31)와의 사이에 단열재(33)가 형성되어 있는 열처리 장치.
- 제1항에 있어서, 상기 저항 발열선(40)의 지름쪽이, 상기 단자의 지름보다 작은 열처리 장치.
- 제1항에 있어서, 제어수단(61)이, 상기 전원에 접속되며, 제어수단(61)에 의하여 상기 발열선(40)으로의 통전량이 콘트롤되는 열처리 장치.
- 제1항에 있어서, 열처리 영역마다 온도 검출센서를 형성하고, 이들의 온도 검출센서가 상기 제어수단(61)에 접속되어 있는 열처리 장치.
- 제1항에 있어서, 단자와 발열선과의 접속부(41)가, 내열블록(31)내에 메워넣어지는 열처리 장치.
- 피처리체를 둘러싸도록 코일 형상의 저항 발열선이 형성되며, 아래끝단부에 개구를 가진 내열블록 부재(31)와, 상기 저항 발열선에 의하여 둘러 싸여지도록 긴쪽축이 수직으로 형성되는 프로세스 튜브(70)와, 상기 내열블록부재의 바깥쪽에 형성되며, 열전도성 재료로 만들어지는 안쪽 커버(34)와, 상기 안쪽 커버(34)의 바깥쪽에 형성된 냉각수단(35)과 아기 냉각수단(35)의 바깥쪽에 형성되며, 열전도성 재료로 만들어진 바깥쪽 커버(38)와, 상기 내열블록부재의 개구 끝단부에서 상기 안쪽커버(34) 및 바깥쪽 커버(38)의 양자에 열전도 가능하도록 접합된 금속제플랜지(32)와 상기 저항 발열선의 끝단부에 전기적으로 접속되며, 상기 안쪽커버(34)에 비접촉으로 관통하는 단자와, 상기 단자에 전기적으로 접속되며, 상기 저항 발열선에 전류를 공급하는 전원(60)과를 구비하여 이루어지는 열처리 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13086990A JPH0424487A (ja) | 1990-05-21 | 1990-05-21 | 熱処置装置 |
JP13086890A JPH0424486A (ja) | 1990-05-21 | 1990-05-21 | 熱処理装置 |
JP13087090A JP2953744B2 (ja) | 1990-05-21 | 1990-05-21 | 熱処理装置 |
JP90-130870 | 1990-05-21 | ||
JP90-130868 | 1990-05-21 | ||
JP90-130869 | 1990-05-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910020804A true KR910020804A (ko) | 1991-12-20 |
KR0147046B1 KR0147046B1 (ko) | 1998-11-02 |
Family
ID=27316209
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910007381A KR0147046B1 (ko) | 1990-05-21 | 1991-05-07 | 열처리 장치 |
Country Status (2)
Country | Link |
---|---|
US (1) | US5128515A (ko) |
KR (1) | KR0147046B1 (ko) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5268033A (en) * | 1991-07-01 | 1993-12-07 | Jeffrey Stewart | Table top parylene deposition chamber |
JPH0855810A (ja) * | 1994-08-16 | 1996-02-27 | Nec Kyushu Ltd | 拡散炉 |
US5488833A (en) * | 1994-09-26 | 1996-02-06 | Stewart; Jeffrey | Tangential flow cold trap |
JP3471100B2 (ja) * | 1994-11-07 | 2003-11-25 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
JP3273118B2 (ja) * | 1995-04-20 | 2002-04-08 | 東北電力株式会社 | 高圧処理装置 |
US6066263A (en) * | 1995-04-20 | 2000-05-23 | Tohoku Electric Power Company, Inc. | Apparatus for converting waste plastic into oil |
JPH11176389A (ja) * | 1997-12-12 | 1999-07-02 | Ushio Inc | ウエハ加熱用フィラメントランプおよび加熱用光源 |
US6252202B1 (en) | 1998-02-10 | 2001-06-26 | Jeneric/Pentron, Inc. | Furnace for heat treatment of dental materials |
US6331212B1 (en) * | 2000-04-17 | 2001-12-18 | Avansys, Llc | Methods and apparatus for thermally processing wafers |
JP2002243898A (ja) * | 2001-02-13 | 2002-08-28 | Ebara Corp | ビーム取り出し装置 |
US6737224B2 (en) | 2001-04-17 | 2004-05-18 | Jeffrey Stewart | Method of preparing thin supported films by vacuum deposition |
TWI245329B (en) * | 2001-11-14 | 2005-12-11 | Anelva Corp | Heating element CVD device and heating element CVD method using the same |
JP4405973B2 (ja) * | 2006-01-17 | 2010-01-27 | キヤノンアネルバ株式会社 | 薄膜作製装置 |
US8023806B2 (en) * | 2007-03-20 | 2011-09-20 | Tokyo Electron Limited | Heat processing furnace and vertical-type heat processing apparatus |
KR101012082B1 (ko) * | 2007-06-25 | 2011-02-07 | 데이또꾸샤 가부시키가이샤 | 가열 장치 및 이것을 채용한 기판 처리 장치 및 반도체장치의 제조 방법 및 절연체 |
JP5136574B2 (ja) * | 2009-05-01 | 2013-02-06 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP5647502B2 (ja) * | 2010-02-23 | 2014-12-24 | 株式会社日立国際電気 | 熱処理装置、半導体装置の製造方法及び基板処理方法。 |
TW201200628A (en) * | 2010-06-29 | 2012-01-01 | Hon Hai Prec Ind Co Ltd | Coating apparatus |
CN102312219A (zh) * | 2010-06-30 | 2012-01-11 | 鸿富锦精密工业(深圳)有限公司 | 镀膜装置 |
US20120009347A1 (en) * | 2010-07-07 | 2012-01-12 | Applied Materials, Inc. | Precise temperature control for teos application by heat transfer fluid |
JP5868619B2 (ja) * | 2011-06-21 | 2016-02-24 | ニチアス株式会社 | 熱処理炉及び熱処理装置 |
DE102012106667B3 (de) * | 2012-07-23 | 2013-07-25 | Heraeus Noblelight Gmbh | Vorrichtung zur Bestrahlung eines Substrats |
CN102879260B (zh) * | 2012-10-23 | 2014-10-01 | 南昌航空大学 | 一种组合式测试材料高温力学性能的装置 |
US10264629B2 (en) * | 2013-05-30 | 2019-04-16 | Osram Sylvania Inc. | Infrared heat lamp assembly |
DE102013113046A1 (de) * | 2013-11-26 | 2015-05-28 | Aixtron Se | Stütz- bzw. Verbindungselemente an einem Heizorgan eines CVD-Reaktors |
CN103740949B (zh) * | 2013-12-31 | 2015-02-04 | 深圳市华星光电技术有限公司 | 金属镁的预处理装置和方法 |
US9915001B2 (en) | 2014-09-03 | 2018-03-13 | Silcotek Corp. | Chemical vapor deposition process and coated article |
US9888528B2 (en) * | 2014-12-31 | 2018-02-06 | Applied Materials, Inc. | Substrate support with multiple heating zones |
KR101720521B1 (ko) | 2015-05-07 | 2017-03-28 | 김상현 | 소구경 배관용 4각 앵글 발열체(Angle heating unit) 및 그 제조 방법 |
WO2017040623A1 (en) | 2015-09-01 | 2017-03-09 | Silcotek Corp. | Thermal chemical vapor deposition coating |
NL2017558B1 (en) * | 2016-09-30 | 2018-04-10 | Tempress Ip B V | A chemical vapour deposition apparatus and use thereof |
CN107131765A (zh) * | 2017-06-09 | 2017-09-05 | 佛山市高捷工业炉有限公司 | 侧放式发热器的工业熔炉 |
WO2020252306A1 (en) | 2019-06-14 | 2020-12-17 | Silcotek Corp. | Nano-wire growth |
EP3843501B1 (en) * | 2019-12-23 | 2022-10-19 | Kanthal GmbH | Methods and systems for cooling a heating element |
KR102307323B1 (ko) * | 2021-07-08 | 2021-09-30 | 박영창 | 석회석 전기소성장치 |
US20230105323A1 (en) * | 2021-09-29 | 2023-04-06 | The Florida State University Research Foundation, Inc. | High Pressure Furnace and Methods of Use |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2145324A (en) * | 1937-03-25 | 1939-01-31 | Baker & Co Inc | Furnace |
US2969412A (en) * | 1959-04-09 | 1961-01-24 | Basic Products Corp | Furnaces |
US3387078A (en) * | 1966-06-15 | 1968-06-04 | Centigrade Systems Inc | Diffusion furnace with flat recovery |
US3804967A (en) * | 1972-10-13 | 1974-04-16 | Sola Basic Ind Inc | Rectangular tube diffusion furnace |
JPS5348589Y2 (ko) * | 1974-02-18 | 1978-11-21 | ||
US4081313A (en) * | 1975-01-24 | 1978-03-28 | Applied Materials, Inc. | Process for preparing semiconductor wafers with substantially no crystallographic slip |
JPS5340761A (en) * | 1976-09-28 | 1978-04-13 | Teijin Ltd | Preparation of unsaturated imide amides |
JPS6031259Y2 (ja) * | 1979-02-20 | 1985-09-18 | 株式会社日立国際電気 | 半導体熱処理用電気炉 |
US4348580A (en) * | 1980-05-07 | 1982-09-07 | Tylan Corporation | Energy efficient furnace with movable end wall |
JPS5831282A (ja) * | 1981-08-19 | 1983-02-23 | 株式会社日立製作所 | 電気炉 |
US4699084A (en) * | 1982-12-23 | 1987-10-13 | The United States Of America As Represented By The Secretary Of The Army | Apparatus for producing high quality epitaxially grown semiconductors |
JPS60246582A (ja) * | 1984-05-21 | 1985-12-06 | 佐藤 宏 | 複合構造電気抵抗発熱器及びその製造方法 |
JPS6189800A (ja) * | 1984-10-08 | 1986-05-07 | Matsushita Electric Ind Co Ltd | 圧電形電気音響変換器 |
US5001327A (en) * | 1987-09-11 | 1991-03-19 | Hitachi, Ltd. | Apparatus and method for performing heat treatment on semiconductor wafers |
JP2553364B2 (ja) * | 1987-10-28 | 1996-11-13 | 東京エレクトロン株式会社 | 熱処理装置 |
-
1991
- 1991-04-30 US US07/693,728 patent/US5128515A/en not_active Expired - Lifetime
- 1991-05-07 KR KR1019910007381A patent/KR0147046B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US5128515A (en) | 1992-07-07 |
KR0147046B1 (ko) | 1998-11-02 |
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