KR910012328A - 플라즈마 처리장치 - Google Patents
플라즈마 처리장치 Download PDFInfo
- Publication number
- KR910012328A KR910012328A KR1019900022373A KR900022373A KR910012328A KR 910012328 A KR910012328 A KR 910012328A KR 1019900022373 A KR1019900022373 A KR 1019900022373A KR 900022373 A KR900022373 A KR 900022373A KR 910012328 A KR910012328 A KR 910012328A
- Authority
- KR
- South Korea
- Prior art keywords
- plasma processing
- pair
- reaction chamber
- electrodes
- electrode
- Prior art date
Links
- 239000007789 gas Substances 0.000 claims 3
- 239000012495 reaction gas Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Classifications
-
- H01L21/205—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제 1 실시예의 개략 구성도.
제2도는 동 가스도입수단의 사시도.
제3도는 본 발명의 제 2 실시예의 개략 구성도.
Claims (3)
- 반응실과, 반응실내를 진공배기하는 배기수단과, 반응실내로 반응가스를 도입하는 가스도입수단과, 반응실내에 서로 대향해서 배설된 1쌍의 전극과, 1쌍의 전극간에 고주파전압을 공급하는 고주파전원을 구비하고, 또한 적어도 한쪽의 전극과 가스도입수단의 가스토출구를 전극의 대향방향으로 이동가능하게 구성한 것을 특징으로 하는 플라즈마 처리장치.
- 제1항에 있어서, 배기수단의 흡입구를 전극의 대향방향으로 이동가능하게 구성한 것을 특징으로 하는 플라즈마 처리장치.
- 제1항 또는 제2항에 있어서, 1쌍의 전극에 대한 고주파전압의 인가방향을 절환하는 절환수단을 배설하는 동시에 1쌍의 전극을 함께 그 대향방향으로 이동가능하게 구성한 것을 특징으로 하는 플라즈마 처리장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1341532A JPH03203317A (ja) | 1989-12-29 | 1989-12-29 | プラズマ処理装置 |
JP1-341532 | 1989-12-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910012328A true KR910012328A (ko) | 1991-08-07 |
KR940000498B1 KR940000498B1 (ko) | 1994-01-21 |
Family
ID=18346799
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900022373A KR940000498B1 (ko) | 1989-12-29 | 1990-12-29 | 플라즈마 처리장치 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5110437A (ko) |
JP (1) | JPH03203317A (ko) |
KR (1) | KR940000498B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100335382B1 (ko) * | 2000-05-23 | 2002-05-06 | 최규술 | 회전 전극 플라즈마 장치, 및 이를 이용한 탄소 나노체합성 방법 |
Families Citing this family (56)
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DE4118973C2 (de) * | 1991-06-08 | 1999-02-04 | Fraunhofer Ges Forschung | Vorrichtung zur plasmaunterstützten Bearbeitung von Substraten und Verwendung dieser Vorrichtung |
JPH05243160A (ja) * | 1992-02-28 | 1993-09-21 | Nec Yamagata Ltd | 半導体デバイス製造用プラズマcvd装置 |
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FR2691035B1 (fr) * | 1992-05-07 | 1994-06-17 | France Telecom | Dispositif et machine a plasma de traitement chimique et procede utilisant ce dispositif. |
US7264850B1 (en) | 1992-12-28 | 2007-09-04 | Semiconductor Energy Laboratory Co., Ltd. | Process for treating a substrate with a plasma |
US6835523B1 (en) | 1993-05-09 | 2004-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for fabricating coating and method of fabricating the coating |
US5824158A (en) * | 1993-06-30 | 1998-10-20 | Kabushiki Kaisha Kobe Seiko Sho | Chemical vapor deposition using inductively coupled plasma and system therefor |
US6183816B1 (en) | 1993-07-20 | 2001-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating the coating |
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US6137231A (en) * | 1996-09-10 | 2000-10-24 | The Regents Of The University Of California | Constricted glow discharge plasma source |
JP3343200B2 (ja) * | 1997-05-20 | 2002-11-11 | 東京エレクトロン株式会社 | プラズマ処理装置 |
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JP3818561B2 (ja) * | 1998-10-29 | 2006-09-06 | エルジー フィリップス エルシーディー カンパニー リミテッド | シリコン酸化膜の成膜方法および薄膜トランジスタの製造方法 |
JP3411240B2 (ja) * | 1999-06-16 | 2003-05-26 | 株式会社半導体先端テクノロジーズ | 半導体試料の処理装置及び処理方法 |
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US6237527B1 (en) * | 1999-08-06 | 2001-05-29 | Axcelis Technologies, Inc. | System for improving energy purity and implant consistency, and for minimizing charge accumulation of an implanted substrate |
JP4578651B2 (ja) | 1999-09-13 | 2010-11-10 | 東京エレクトロン株式会社 | プラズマ処理方法およびプラズマ処理装置、プラズマエッチング方法 |
US6350317B1 (en) * | 1999-12-30 | 2002-02-26 | Lam Research Corporation | Linear drive system for use in a plasma processing system |
KR100467082B1 (ko) * | 2000-03-02 | 2005-01-24 | 주성엔지니어링(주) | 반도체소자 제조장치 및 그 클리닝방법 |
US6531069B1 (en) | 2000-06-22 | 2003-03-11 | International Business Machines Corporation | Reactive Ion Etching chamber design for flip chip interconnections |
JP4655395B2 (ja) * | 2001-03-23 | 2011-03-23 | 東京エレクトロン株式会社 | 熱処理装置及びその方法 |
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JP4606642B2 (ja) * | 2001-05-17 | 2011-01-05 | 住友化学株式会社 | 半導体製造装置及び化合物半導体の製造方法 |
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JP4336124B2 (ja) * | 2003-03-10 | 2009-09-30 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
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JP4273932B2 (ja) * | 2003-11-07 | 2009-06-03 | 株式会社島津製作所 | 表面波励起プラズマcvd装置 |
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JP4638833B2 (ja) * | 2006-03-31 | 2011-02-23 | 三井造船株式会社 | プラズマ成膜装置およびプラズマ成膜装置のクリーニング方法 |
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KR100829922B1 (ko) * | 2006-08-24 | 2008-05-16 | 세메스 주식회사 | 플라즈마 처리 장치 및 방법 |
DE102008026001B4 (de) * | 2007-09-04 | 2012-02-16 | Von Ardenne Anlagentechnik Gmbh | Verfahren und Vorrichtung zur Erzeugung und Bearbeitung von Schichten auf Substraten unter definierter Prozessatmosphäre und Heizelement |
KR100839914B1 (ko) * | 2008-03-10 | 2008-06-20 | 세메스 주식회사 | 플라즈마 처리 방법 |
WO2010131366A1 (ja) * | 2009-05-15 | 2010-11-18 | 株式会社島津製作所 | 表面波プラズマcvd装置および成膜方法 |
JP5432686B2 (ja) * | 2009-12-03 | 2014-03-05 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5809396B2 (ja) * | 2010-06-24 | 2015-11-10 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
GB201102337D0 (en) | 2011-02-09 | 2011-03-23 | Univ Ulster | A plasma based surface augmentation method |
US20140134849A1 (en) * | 2012-11-09 | 2014-05-15 | Intermolecular Inc. | Combinatorial Site Isolated Plasma Assisted Deposition |
US9293303B2 (en) * | 2013-08-30 | 2016-03-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low contamination chamber for surface activation |
JP6638334B2 (ja) * | 2015-11-05 | 2020-01-29 | 栗田工業株式会社 | プラズマ処理装置部品のクリーニング方法及びクリーニング装置 |
KR101800321B1 (ko) * | 2016-04-18 | 2017-11-22 | 최상준 | 건식 에칭장치 |
US10854432B2 (en) * | 2016-06-07 | 2020-12-01 | Applied Materials, Inc. | Rotary plasma electrical feedthrough |
US20180073143A1 (en) * | 2016-09-12 | 2018-03-15 | Toshiba Memory Corporation | Plasma processing apparatus and plasma processing method |
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JPS5742131A (en) * | 1980-08-27 | 1982-03-09 | Mitsubishi Electric Corp | Parallel flat board type dry etching device |
JPS57102022A (en) * | 1980-12-17 | 1982-06-24 | Nec Corp | Reactive sputter etching equipment |
JPS60184679A (ja) * | 1984-03-01 | 1985-09-20 | Nippon Telegr & Teleph Corp <Ntt> | 多層薄膜形成法及びそれに用いる装置 |
US4908095A (en) * | 1988-05-02 | 1990-03-13 | Tokyo Electron Limited | Etching device, and etching method |
JPH02213468A (ja) * | 1989-02-13 | 1990-08-24 | Fuji Electric Co Ltd | 反応性スパツタリング装置 |
-
1989
- 1989-12-29 JP JP1341532A patent/JPH03203317A/ja active Pending
-
1990
- 1990-12-27 US US07/634,732 patent/US5110437A/en not_active Expired - Lifetime
- 1990-12-29 KR KR1019900022373A patent/KR940000498B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100335382B1 (ko) * | 2000-05-23 | 2002-05-06 | 최규술 | 회전 전극 플라즈마 장치, 및 이를 이용한 탄소 나노체합성 방법 |
Also Published As
Publication number | Publication date |
---|---|
US5110437A (en) | 1992-05-05 |
JPH03203317A (ja) | 1991-09-05 |
KR940000498B1 (ko) | 1994-01-21 |
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