JPS5468169A - Plasma processor of capacitor type - Google Patents

Plasma processor of capacitor type

Info

Publication number
JPS5468169A
JPS5468169A JP13465177A JP13465177A JPS5468169A JP S5468169 A JPS5468169 A JP S5468169A JP 13465177 A JP13465177 A JP 13465177A JP 13465177 A JP13465177 A JP 13465177A JP S5468169 A JPS5468169 A JP S5468169A
Authority
JP
Japan
Prior art keywords
gas
capacitor type
plasma processing
excited
dispersion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13465177A
Other languages
Japanese (ja)
Other versions
JPS616536B2 (en
Inventor
Masakuni Akiba
Hiroto Nagatomo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13465177A priority Critical patent/JPS5468169A/en
Publication of JPS5468169A publication Critical patent/JPS5468169A/en
Publication of JPS616536B2 publication Critical patent/JPS616536B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Abstract

PURPOSE:To establish the unit in which the plasma processing rich in mass-production and absent in the dispersion in the quality can be made, by not inserting the processed material between the capacitor type electrode plates. CONSTITUTION:The reaction gas inlet 18 is placed on the processed body 13 to supply the reaction gas 20 excited in uniform plasma to the processed body 13, the gas dispersion operator 22 diffusing the gas 20 uniformly is inserted under the supply inlet 18 as required, and the capacitor type electrode plate 10 plasma exciting the gas 20 is placed. Further, the plasma processing is made with the gas 20 excited with the electrode 10. Accordingly, since the processed material is not inserted between the capacitor type electodes, even if high power is applied between the electrodes and plasma processing speed is increased, no electric damage is given to the processes material. Further, the reaction gas uniformly excited is fed to the processed material and the dispersion in the plasma processing can be avoided.
JP13465177A 1977-11-11 1977-11-11 Plasma processor of capacitor type Granted JPS5468169A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13465177A JPS5468169A (en) 1977-11-11 1977-11-11 Plasma processor of capacitor type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13465177A JPS5468169A (en) 1977-11-11 1977-11-11 Plasma processor of capacitor type

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP24198183A Division JPS59145533A (en) 1983-12-23 1983-12-23 Plasma processing device

Publications (2)

Publication Number Publication Date
JPS5468169A true JPS5468169A (en) 1979-06-01
JPS616536B2 JPS616536B2 (en) 1986-02-27

Family

ID=15133346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13465177A Granted JPS5468169A (en) 1977-11-11 1977-11-11 Plasma processor of capacitor type

Country Status (1)

Country Link
JP (1) JPS5468169A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56146876A (en) * 1980-01-16 1981-11-14 Nat Res Dev Adhering method and apparatus
JPS58117869A (en) * 1981-12-28 1983-07-13 Toshiba Corp Film forming device
JPS594028A (en) * 1982-06-30 1984-01-10 Fujitsu Ltd Manufacturing device of semiconductor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56146876A (en) * 1980-01-16 1981-11-14 Nat Res Dev Adhering method and apparatus
JPH036223B2 (en) * 1980-01-16 1991-01-29 Nat Res Dev
JPS58117869A (en) * 1981-12-28 1983-07-13 Toshiba Corp Film forming device
JPS594028A (en) * 1982-06-30 1984-01-10 Fujitsu Ltd Manufacturing device of semiconductor
JPH0437578B2 (en) * 1982-06-30 1992-06-19 Fujitsu Ltd

Also Published As

Publication number Publication date
JPS616536B2 (en) 1986-02-27

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