KR920005270A - 미세가공장치 및 방법 - Google Patents
미세가공장치 및 방법 Download PDFInfo
- Publication number
- KR920005270A KR920005270A KR1019910014633A KR910014633A KR920005270A KR 920005270 A KR920005270 A KR 920005270A KR 1019910014633 A KR1019910014633 A KR 1019910014633A KR 910014633 A KR910014633 A KR 910014633A KR 920005270 A KR920005270 A KR 920005270A
- Authority
- KR
- South Korea
- Prior art keywords
- vacuum chamber
- sample
- reactive gas
- counter electrode
- generating means
- Prior art date
Links
- 238000005459 micromachining Methods 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/16—Surface shaping of articles, e.g. embossing; Apparatus therefor by wave energy or particle radiation, e.g. infrared heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0805—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
- B29C2035/0838—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using laser
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0866—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using particle radiation
- B29C2035/0872—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using particle radiation using ion-radiation, e.g. alpha-rays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0866—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using particle radiation
- B29C2035/0877—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using particle radiation using electron radiation, e.g. beta-rays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2079/00—Use of polymers having nitrogen, with or without oxygen or carbon only, in the main chain, not provided for in groups B29K2061/00 - B29K2077/00, as moulding material
- B29K2079/08—PI, i.e. polyimides or derivatives thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이 발명의 한 실시예에 의한 프라즈마에칭장치를 표시하는 개략단면도.
제2도는 제1도에 표시한 장치에 의하여 에칭을 행한 반도체 기판의 측면단면도.
Claims (2)
- 진공챔버와, 이 진공챔버내에 반응성가스를 공급하는 반응성가스 공급수단과, 상기 진공챔버내에서 상기 반응성 가스의 프라즈마를 발생시키는 프라즈마 발생수단과, 상기 진공챔버내에 배치되고, 시료를 실어서 설치하는 것과 아울러 상기 프라즈마 발생수단에 접속되어 전극으로 되는 시료대겸전극과, 이 시료대겸전극의 이면에 설치된 탄성파 발생수단과, 상기 진공챔버내를 배기하는 배기수단과를 구비한 것을 특징으로 하는 미세가공장치.
- 미세가공되는 시료를 진공챔버내의 시료대겸전극상에 실어서 설치하고, 상기 진공챔버내를 소정의 진공도까지 배기하고, 상기 진공챔버내에 반응성가스를 공급하고, 상기 시료대겸전극 및 프라즈마발생수단에 의하여 상기 반응성가스의 프라즈마를 상기 진공챔버내에 발생시키고, 이어서, 상기 시료대겸전극의 이면에 설치된 탄성파발생수단에 의하여 시료에 탄성파를 인가하면서 미세가공을 행하는 것을 특징으로 하는 미세가공방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2228017A JPH04111312A (ja) | 1990-08-31 | 1990-08-31 | 微細加工装置及び方法 |
JP2-228017 | 1990-08-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR920005270A true KR920005270A (ko) | 1992-03-28 |
Family
ID=16869887
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910014633A KR920005270A (ko) | 1990-08-31 | 1991-08-23 | 미세가공장치 및 방법 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPH04111312A (ko) |
KR (1) | KR920005270A (ko) |
DE (1) | DE4128780A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100364073B1 (ko) * | 2000-03-24 | 2002-12-11 | 주식회사 기림세미텍 | 플라즈마 식각 장치 및 이를 이용한 식각 방법 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5228940A (en) * | 1990-10-03 | 1993-07-20 | Mitsubishi Denki Kabushiki Kaisha | Fine pattern forming apparatus |
JPH04142734A (ja) * | 1990-10-03 | 1992-05-15 | Mitsubishi Electric Corp | 微細加工装置及び方法 |
US6268264B1 (en) * | 1998-12-04 | 2001-07-31 | Vanguard International Semiconductor Corp. | Method of forming shallow trench isolation |
SG93862A1 (en) * | 1999-03-30 | 2003-01-21 | Applied Materials Inc | Method for reducing topography dependent charging effects in a plasma enhanced semiconductor wafer processing system |
US6635577B1 (en) | 1999-03-30 | 2003-10-21 | Applied Materials, Inc | Method for reducing topography dependent charging effects in a plasma enhanced semiconductor wafer processing system |
EP3888120A4 (en) * | 2018-11-30 | 2022-11-02 | Applied Materials, Inc. | METHODS FOR PATTERNING METALLIC LAYERS |
JP2021017602A (ja) * | 2019-07-17 | 2021-02-15 | コニカミノルタ株式会社 | 微細構造体の製造方法及び微細構造体の製造装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS594025A (ja) * | 1982-06-30 | 1984-01-10 | Hitachi Ltd | プラズマによる処理方法 |
JPH02122625A (ja) * | 1988-11-01 | 1990-05-10 | Toshiba Corp | 半導体装置の製造方法とその製造装置 |
DE3900768C1 (en) * | 1989-01-12 | 1990-02-22 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De | Plasma etching device and method for operating it |
DE4010672A1 (de) * | 1990-04-03 | 1991-10-10 | Leybold Ag | Verfahren und vorrichtung zur behandlung von werkstuecken durch reaktives ionenaetzen |
-
1990
- 1990-08-31 JP JP2228017A patent/JPH04111312A/ja active Pending
-
1991
- 1991-08-23 KR KR1019910014633A patent/KR920005270A/ko not_active IP Right Cessation
- 1991-08-29 DE DE4128780A patent/DE4128780A1/de not_active Withdrawn
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100364073B1 (ko) * | 2000-03-24 | 2002-12-11 | 주식회사 기림세미텍 | 플라즈마 식각 장치 및 이를 이용한 식각 방법 |
Also Published As
Publication number | Publication date |
---|---|
JPH04111312A (ja) | 1992-04-13 |
DE4128780A1 (de) | 1992-03-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application | ||
SUBM | Submission of document of abandonment before or after decision of registration |