DE4128780A1 - Vorrichtung und verfahren zum bilden einer feinstruktur - Google Patents
Vorrichtung und verfahren zum bilden einer feinstrukturInfo
- Publication number
- DE4128780A1 DE4128780A1 DE4128780A DE4128780A DE4128780A1 DE 4128780 A1 DE4128780 A1 DE 4128780A1 DE 4128780 A DE4128780 A DE 4128780A DE 4128780 A DE4128780 A DE 4128780A DE 4128780 A1 DE4128780 A1 DE 4128780A1
- Authority
- DE
- Germany
- Prior art keywords
- fine structure
- vacuum chamber
- sample
- layer
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 28
- 238000001020 plasma etching Methods 0.000 title claims abstract description 13
- 230000015572 biosynthetic process Effects 0.000 title claims description 14
- 238000000034 method Methods 0.000 claims abstract description 46
- 238000005530 etching Methods 0.000 claims abstract description 40
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 230000008569 process Effects 0.000 claims abstract description 19
- 230000005291 magnetic effect Effects 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 5
- 238000000992 sputter etching Methods 0.000 claims abstract description 4
- 239000002887 superconductor Substances 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000003302 ferromagnetic material Substances 0.000 claims abstract description 3
- 229920003986 novolac Polymers 0.000 claims abstract description 3
- 229920000620 organic polymer Polymers 0.000 claims abstract description 3
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 3
- 239000010703 silicon Substances 0.000 claims abstract description 3
- 239000004642 Polyimide Substances 0.000 claims abstract 2
- 229920001721 polyimide Polymers 0.000 claims abstract 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 2
- 230000005284 excitation Effects 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 239000011135 tin Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 230000007935 neutral effect Effects 0.000 abstract description 6
- 210000002381 plasma Anatomy 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 10
- 239000002245 particle Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000003116 impacting effect Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000003313 weakening effect Effects 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- -1 halogen ions Chemical class 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/16—Surface shaping of articles, e.g. embossing; Apparatus therefor by wave energy or particle radiation, e.g. infrared heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0805—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
- B29C2035/0838—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using laser
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0866—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using particle radiation
- B29C2035/0872—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using particle radiation using ion-radiation, e.g. alpha-rays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0866—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using particle radiation
- B29C2035/0877—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using particle radiation using electron radiation, e.g. beta-rays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2079/00—Use of polymers having nitrogen, with or without oxygen or carbon only, in the main chain, not provided for in groups B29K2061/00 - B29K2077/00, as moulding material
- B29K2079/08—PI, i.e. polyimides or derivatives thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2228017A JPH04111312A (ja) | 1990-08-31 | 1990-08-31 | 微細加工装置及び方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE4128780A1 true DE4128780A1 (de) | 1992-03-05 |
Family
ID=16869887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE4128780A Withdrawn DE4128780A1 (de) | 1990-08-31 | 1991-08-29 | Vorrichtung und verfahren zum bilden einer feinstruktur |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH04111312A (ko) |
| KR (1) | KR920005270A (ko) |
| DE (1) | DE4128780A1 (ko) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4132730A1 (de) * | 1990-10-03 | 1992-04-09 | Mitsubishi Electric Corp | Verfahren und vorrichtung zum herstellen von feinstrukturen |
| US5228940A (en) * | 1990-10-03 | 1993-07-20 | Mitsubishi Denki Kabushiki Kaisha | Fine pattern forming apparatus |
| EP1041172A2 (en) * | 1999-03-30 | 2000-10-04 | Applied Materials, Inc. | Method for reducing topography dependent charging effects in a plasma enhanced semiconductor wafer processing system |
| US6635577B1 (en) | 1999-03-30 | 2003-10-21 | Applied Materials, Inc | Method for reducing topography dependent charging effects in a plasma enhanced semiconductor wafer processing system |
| TWI750642B (zh) * | 2019-07-17 | 2021-12-21 | 日商柯尼卡美能達股份有限公司 | 微結構體之製造方法及微結構體之製造裝置 |
| EP3888120A4 (en) * | 2018-11-30 | 2022-11-02 | Applied Materials, Inc. | METHODS FOR PATTERNING METALLIC LAYERS |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6268264B1 (en) * | 1998-12-04 | 2001-07-31 | Vanguard International Semiconductor Corp. | Method of forming shallow trench isolation |
| KR200197657Y1 (ko) * | 2000-03-24 | 2000-09-15 | 주식회사기림세미텍 | 플라즈마 식각 장치 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3900768C1 (en) * | 1989-01-12 | 1990-02-22 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De | Plasma etching device and method for operating it |
| DE4010672A1 (de) * | 1990-04-03 | 1991-10-10 | Leybold Ag | Verfahren und vorrichtung zur behandlung von werkstuecken durch reaktives ionenaetzen |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS594025A (ja) * | 1982-06-30 | 1984-01-10 | Hitachi Ltd | プラズマによる処理方法 |
| JPH02122625A (ja) * | 1988-11-01 | 1990-05-10 | Toshiba Corp | 半導体装置の製造方法とその製造装置 |
-
1990
- 1990-08-31 JP JP2228017A patent/JPH04111312A/ja active Pending
-
1991
- 1991-08-23 KR KR1019910014633A patent/KR920005270A/ko not_active IP Right Cessation
- 1991-08-29 DE DE4128780A patent/DE4128780A1/de not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3900768C1 (en) * | 1989-01-12 | 1990-02-22 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De | Plasma etching device and method for operating it |
| DE4010672A1 (de) * | 1990-04-03 | 1991-10-10 | Leybold Ag | Verfahren und vorrichtung zur behandlung von werkstuecken durch reaktives ionenaetzen |
Non-Patent Citations (4)
| Title |
|---|
| Pat. Abstr. of JP, C-541, Vol. 12, No. 421 (=JP 63-1 53 265 A) * |
| Pat. Abstr. of JP, C-607, Vol. 13, No. 260 (=JP 1-62 461 A) * |
| Pat. Abstr. of JP, E-238, Vol. 8, No. 81, (=JP 59-4 025 A) * |
| Pat. Abstr. of JP, E-801, Vol. 13, No. 352, (=JP 1-1 11 333 A) * |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4132730A1 (de) * | 1990-10-03 | 1992-04-09 | Mitsubishi Electric Corp | Verfahren und vorrichtung zum herstellen von feinstrukturen |
| US5228940A (en) * | 1990-10-03 | 1993-07-20 | Mitsubishi Denki Kabushiki Kaisha | Fine pattern forming apparatus |
| US5292401A (en) * | 1990-10-03 | 1994-03-08 | Mitsubishi Denki Kabushiki Kaisha | Method of forming a fine pattern |
| EP1041172A2 (en) * | 1999-03-30 | 2000-10-04 | Applied Materials, Inc. | Method for reducing topography dependent charging effects in a plasma enhanced semiconductor wafer processing system |
| EP1041172A3 (en) * | 1999-03-30 | 2001-07-04 | Applied Materials, Inc. | Method for reducing topography dependent charging effects in a plasma enhanced semiconductor wafer processing system |
| SG93862A1 (en) * | 1999-03-30 | 2003-01-21 | Applied Materials Inc | Method for reducing topography dependent charging effects in a plasma enhanced semiconductor wafer processing system |
| US6635577B1 (en) | 1999-03-30 | 2003-10-21 | Applied Materials, Inc | Method for reducing topography dependent charging effects in a plasma enhanced semiconductor wafer processing system |
| EP3888120A4 (en) * | 2018-11-30 | 2022-11-02 | Applied Materials, Inc. | METHODS FOR PATTERNING METALLIC LAYERS |
| TWI750642B (zh) * | 2019-07-17 | 2021-12-21 | 日商柯尼卡美能達股份有限公司 | 微結構體之製造方法及微結構體之製造裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR920005270A (ko) | 1992-03-28 |
| JPH04111312A (ja) | 1992-04-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1620581B1 (de) | Plasmabehandlung zur reinigung von kupfer oder nickel | |
| DE69625974T2 (de) | Verfahren und Struktur zur Verbesserung der Flüssigkeitsströmung für Wärmetransport in elektrostatische Halter | |
| DE69305291T2 (de) | Verfahren zur Vorbereitung einer Blende zur Verminderung von Teilchen in einer Kammer zur physikalischen Aufdampfung | |
| DE69308822T2 (de) | Verfahren zum Ätzen von Aluminium und dessen Legierungen unter Verwendung eines HC1, C1 und N2 enthaltenden Ätzmittels | |
| DE69312544T2 (de) | Plasmaerzeugungsverfahren und dieses Verfahren verwendende Plasmaerzeugungsvorrichtung | |
| DE10103341C2 (de) | Plasmabehandlungsvorrichtung und Verfahren | |
| DE3871851T2 (de) | Trockenaetzverfahren fuer aluminiumschichten. | |
| DE3117252A1 (de) | Plasmaauftragvorrichtung | |
| EP0021140A1 (de) | Ionenquelle in einer Vakuumkammer und Verfahren zum Betrieb derselben | |
| DE3140890C2 (de) | Photolithographisches Verfahren zum Herstellen einer integrierten Schaltungsvorrichtung | |
| DE2151200A1 (de) | Verfahren zur Herstellung eines Musters aus Vertiefungen in der Oberflaeche eines festen Koerpers | |
| DE4105103C2 (ko) | ||
| DE4130391C2 (de) | Verfahren zum selektiven entfernen einer schicht und dessen verwendung | |
| DE4128779A1 (de) | Vorrichtung und verfahren zum bilden einer feinstruktur | |
| DE4128780A1 (de) | Vorrichtung und verfahren zum bilden einer feinstruktur | |
| DE69111490T2 (de) | Verfahren zur Vorbereitung einer Blende zur Verminderung von Teilchen in einer Kammer zur physikalischen Aufdampfung. | |
| DE3607844A1 (de) | Verfahren und vorrichtung zur herstellung von vertiefungen und/oder ausnehmungen mit abgeschraegten aussenkanten an der oberflaeche von werkstuecken aus halbleitendem material und/oder daran aufgebrachten duennen schichten durch aetzen | |
| DE102006051550B4 (de) | Verfahren und Vorrichtung zum Strukturieren von Bauteilen unter Verwendung eines Werkstoffs auf der Basis von Siliziumoxid | |
| DE3219284C2 (ko) | ||
| DE3140675A1 (de) | Verfahren und gasgemisch zum aetzen von aluminium | |
| DE2449731A1 (de) | Aetzverfahren | |
| DE4135033C1 (ko) | ||
| DE69304804T2 (de) | Verfahren und Vorrichtung zur Trockenbeschichtung | |
| DE4132730C2 (de) | Verfahren und Herstellen von Feinstrukturen und Vorrichtung zur Durchführung des Verfahrens sowie Verwendung der Vorrichtung | |
| DE10050046C2 (de) | Mehrstufige Trockenplasmaätzung mit variablem Elektrodenabstand |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8130 | Withdrawal |