KR920005282A - 미세가공 장치 및 방법 - Google Patents

미세가공 장치 및 방법 Download PDF

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Publication number
KR920005282A
KR920005282A KR1019910014769A KR910014769A KR920005282A KR 920005282 A KR920005282 A KR 920005282A KR 1019910014769 A KR1019910014769 A KR 1019910014769A KR 910014769 A KR910014769 A KR 910014769A KR 920005282 A KR920005282 A KR 920005282A
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KR
South Korea
Prior art keywords
vacuum chamber
sample
reactive gas
generating means
plasma
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Application number
KR1019910014769A
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English (en)
Other versions
KR950001842B1 (ko
Inventor
사가히로 요네다
Original Assignee
시기 모리야
미쓰비시 뎅끼 가부시끼가이샤
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Publication date
Application filed by 시기 모리야, 미쓰비시 뎅끼 가부시끼가이샤 filed Critical 시기 모리야
Publication of KR920005282A publication Critical patent/KR920005282A/ko
Application granted granted Critical
Publication of KR950001842B1 publication Critical patent/KR950001842B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

내용 없음

Description

미세가공 장치 및 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이 발명의 일실시예에 의한 프라즈마에칭 장치를 표시하는 개략단면도,
제2도는 제1도에 표시한 플라즈마에칭장치에 의하여 에칭된 반도체기판의 측면단면도,
제3도는 이 발명의 일실시예 및 종래의 플라즈마에칭 장치에 있어서 플라즈마 밀도의 분포도.

Claims (2)

  1. 진공체임버와 이 진공체임버내에 반응성가스를 공급하는 반응성 가스 공급수단과, 상기 전공체임버내에서 상기 반응성가스의 플라즈마를 발생시키는 플라즈마 발생수단과, 상기 진공체임버내에 배치되어, 시료를 얹어놓는것과 함께 상기 플라즈마 발생수단에 접속되어 전극으로 되는 시료대겸 전극과, 상기 진공체임버의 벽부에 설치된 탄성과 발생수단과, 상기 진공체임버를 배기하는 배기수단과를 구비한것을 특징으로 하는 미세가공장치.
  2. 미세가공되는 시료를 진공체임버내의 시료대겸 전극강에 얹어놓고 상기 진공체임버내를 소정의 진공도까지 배기하고, 상기 진공체임버내에 반응성가스를 공급하고, 상기 시료대겸 전극 및 플라즈마 발생수단에 의하여 상기 반응성가스의 플라즈마를 상기 진공체임버내에 발생시키고, 잇따라서, 상기 진공체임버의 벽부에 설치된 탄성과 발생수단에 의하여 상기 진공체임버에 탄성파를 인가하면서 미세가공을 하는것을 특징으로하는 미세가공방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019910014769A 1990-08-31 1991-08-26 미세가공장치 및 방법 KR950001842B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2228018A JPH04111313A (ja) 1990-08-31 1990-08-31 微細加工装置及び方法
JP2-228018 1990-08-31

Publications (2)

Publication Number Publication Date
KR920005282A true KR920005282A (ko) 1992-03-28
KR950001842B1 KR950001842B1 (ko) 1995-03-03

Family

ID=16869904

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910014769A KR950001842B1 (ko) 1990-08-31 1991-08-26 미세가공장치 및 방법

Country Status (3)

Country Link
JP (1) JPH04111313A (ko)
KR (1) KR950001842B1 (ko)
DE (1) DE4128779C2 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5228940A (en) * 1990-10-03 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Fine pattern forming apparatus
JPH04142734A (ja) * 1990-10-03 1992-05-15 Mitsubishi Electric Corp 微細加工装置及び方法
US5456796A (en) * 1993-06-02 1995-10-10 Applied Materials, Inc. Control of particle generation within a reaction chamber
US6121163A (en) 1996-02-09 2000-09-19 Applied Materials, Inc. Method and apparatus for improving the film quality of plasma enhanced CVD films at the interface
US5902494A (en) * 1996-02-09 1999-05-11 Applied Materials, Inc. Method and apparatus for reducing particle generation by limiting DC bias spike
US6465043B1 (en) 1996-02-09 2002-10-15 Applied Materials, Inc. Method and apparatus for reducing particle contamination in a substrate processing chamber
US7288293B2 (en) 2001-03-27 2007-10-30 Apit Corp. S.A. Process for plasma surface treatment and device for realizing the process
CN100437883C (zh) * 2001-03-27 2008-11-26 Apit股份有限公司 等离子体表面处理的方法以及实现该方法的设备
JP2021017602A (ja) * 2019-07-17 2021-02-15 コニカミノルタ株式会社 微細構造体の製造方法及び微細構造体の製造装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5376755A (en) * 1976-12-20 1978-07-07 Fujitsu Ltd Modulation method of plasma density
JPS58200539A (ja) * 1982-05-19 1983-11-22 Hitachi Ltd ドライプロセスにおける処理終点検出方法およびその装置
JPH01111333A (ja) * 1987-10-26 1989-04-28 Oki Electric Ind Co Ltd ドライエッチング装置
DE3900768C1 (en) * 1989-01-12 1990-02-22 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De Plasma etching device and method for operating it

Also Published As

Publication number Publication date
JPH04111313A (ja) 1992-04-13
DE4128779A1 (de) 1992-03-05
DE4128779C2 (de) 1995-02-16
KR950001842B1 (ko) 1995-03-03

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