KR910008986B1 - 반도체 장치용 리드프레임 - Google Patents

반도체 장치용 리드프레임 Download PDF

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Publication number
KR910008986B1
KR910008986B1 KR1019880005384A KR880005384A KR910008986B1 KR 910008986 B1 KR910008986 B1 KR 910008986B1 KR 1019880005384 A KR1019880005384 A KR 1019880005384A KR 880005384 A KR880005384 A KR 880005384A KR 910008986 B1 KR910008986 B1 KR 910008986B1
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South Korea
Prior art keywords
lead frame
wire
bonding area
copper
wire bonding
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KR1019880005384A
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English (en)
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KR890017802A (ko
Inventor
아끼히꼬 무라다
도시히꼬 시마다
Original Assignee
신고오 덴기 고오교오 가부시끼가이샤
가와다니 유끼마로
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Publication of KR890017802A publication Critical patent/KR890017802A/ko
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    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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Abstract

내용 없음.

Description

반도체 장치용 리드프레임
제1도는 본 발명의 반도체 장치용 리드프레임의 사용상태 평면도.
제2도는 제1도의 A-A 단면도.
본 발명은 반도체장치에 사용하는 리드프레임에 관한 것이다.
종래로부터 리드프레임의 다이패드 상면에 반도체칩을 탑재하고 그 탑재한 칩의 전극과 리드프레임의 리드선단을 와이어로 접속시킨 후에 리드선단을 포함하는 칩주위 부분을 수지등으로 기밀봉지하여 형성시키는 반도체장치가 있다.
근년에 이 반도체 장치에 있어서는 제조의 합리화를 도모하는 목적으로 리드프레임의 리드의 와이어 본딩 에어리어 표면에 와이어를 확실하고 용이하게 접속가능하게 하기위하여 고가이고, 공수를 요하는 금도금등의 도금을 행하지 않고, 동도금을 행하거나 행하지 않은 동 또는 동합금제의 리드프레임의 동소재가 노출된 리드의 와이어 본딩 에어리어 표면에 다이렉트 본딩에 의해서 와이어를 초음파 병용 열압착법등에 의해서 직접 접속하는 것이 행해지게 되었다.
그런데 상술한 리드프레임의 동소재가 노출된 리드의 와이어 본딩 에어리어 표면에 직접 와이어를 접속하는 것은 그 와이어를 접속하는 리드의 와이어 본딩 에어리어 표면이 금도금등의 도금층으로 덮여있지 않고 동소재가 직접 외부에 노출된 상태에 있다. 따라서 상술한 리드프레임에 있어서는 그 동소재가 노출된 상태에 있는 와이어 본딩 에어리어 표면이 그 반송시나 수송시 또는 리드프레임의 다이패드상면에 반도체칩을 열을 가하여 고착시킬 때등에 대기중에 포함된 산소에 의해서 산화되어 이 와이어 본딩 에어리어 표면에 동산화막이 형성된다. 그로 인해서 상술한 리드프레임에 있어서는 상기 동 산화막이 장해가 되어서 상기 동소재가 노출된 와이어 본딩 에어리어 표면에 다이렉트 본딩에 의해서 와이어를 확실하고 용이하게 초음파 병용 열압착법등에 의해서 직접 접속시킬 수 없었다.
또 종래로부터 상술한 리드프레임의 동소재가 노출된 와이어 본딩 에어리어 표면에 동 산화막이 형성되는 것을 방지하기 위하여 리드프레임을 그 반송시나 수송시에 진공 패킹하든지 또는 리드프레임을 불활성가스를 충만시킨 약환성을 유지한 분위기내에 놓아서 반도체 칩의 전극과 리드프레임의 리드에 와이어를 초음파병용 열압착법등에 의해서 접속시키든지 하고 있으나 그러한 경우는 많은 공수와 특수한 설비나 고가의 불활성가스등을 필요로 한다.
본 발명은 이와같은 문제점을 해소시키기 위하여 행해진 것이며, 그 목적은 와이어를 접속하는 동 소재표면이 노출된 와이어 본딩 에어리어 표면에 동 산화막이 형성되기 어렵다. 동 소재가 노출된 와이어 본딩 에어리어 표면에 다이렉트 본딩에 의해서 와이어를 항상 확실하고 용이하게 직접 접속시킬 수 있는 반도체용 리드프레임을 제공하는데 있다.
상기 목적을 달성하기 위하여 본 발명의 반도체장치용 리드프레임은 제1도 및 제2도에 그 구성예를 나타낸 바와같이 동도금을 행한 리드프레임 1 또는 동 또는 동합금제 리드프레임의 동소재가 노출된 와이어 본딩 에어리어 2a 표면에 와이어 3을 직접 접속하는 반도체장치용 리드프레임에 있어서 이 리드프레임의 적어도 상기 동소재가 노출된 와이어 본딩 에어리어 2a 표면에 두께가 대략 0.1㎛ 이하의 은도금 4를 행한 것을 특징으로 한다.
본 발명의 반도체장치용 리드프레임에 있어서는 와이어 3을 접속하는 동소재가 노출된 와이어 본딩 에어리어 2a 표면에 극히 얇게 은도금 4를 행하였다. 그로 인해서 상기 동소재가 노출된 와이어 본딩 에어리어 2a 표면에 동산화막이 형성되기 어렵다.
또 동소재가 노출된 와이어 본딩 에어리어 2a 표면에 은도금 4를 극히 엷게 행하였다. 그로인해서 이 은도금 4를 행한 와이어 본딩 에어리어 2a 표면에 다이렉트 본딩에 의해서 와이어 3을 초음파 병용 열압착법등에 의해서 직접 접속시킬 때에 이 와이어 본딩 에어리어 2a 표면에 행한 은도금 4가 장해가 되지않고, 동선등의 와이어 3을 와이어 본딩 에어리어 2a를 형성하고 있는 동소재에 확실하게 일체적으로 접합시킬 수 있다.
다음에 본 발명의 실시예에 관해서 도면에 의해서 설명하겠다.
제1도 및 제2도는 본 발명의 반도체 장치용 리드프레임의 적합한 실시예를 나타내고 제1도는 이 리드프레임의 사용상태 평면도, 제2도는 제1도의 A-A 단면도이다. 이하 상기 도중의 실시예를 설명하겠다. 도면에서 1은 상하의 가이드레일 5사이에 반도체칩 6을 탑재하는 다이패드 7과 복수본의 리드 2를 구비하고 있고, 그 표면에 동도금을 행하거나 또는 행하지 않은 동 또는 동합금제의 리드프레임이다. 이 리드프레임 1의 동도금을 행한 또는 행하지 않은 동소재가 직접 외부에 노출된 각 리드 2선단상면의 와이어 본딩 에어리어 2a 표면을 포함하는 리드프레임 1 주위 표면 전체에 분자층 레벨부터 0.1㎛ 정도의 극히 얇은 은도금 4를 행한다. 리드프레임 1에 이와같은 극히 얇은 은도금 4를 행하려면 예를들면 그 표면에 동도금을 행하거나 행하지 않은 동 또는 동합금제의 리드프레임 1을 시안화은칼리움 KAg(CN)2를 10g중/ℓ 시안화칼리움 KCN를 5g중/ℓ 함유하는 도금액에 20초전후 침지시키고, 무전해 도금법을 사용하여 상기 동소재가 노출된 리드프레임 1 주위 표면전체에 일체적으로 극히 얇은 은도금 4를 행한다. 제1도 및 제2도에 나타낸 반도체 장치용 리드프레임은 이상의 구성으로 되어있다.
다음에 그 작용을 설명하겠다. 리드프레임 1의 와이어 본딩 에어리어 2a 표면을 포함하는 주위표면 전체에 극히 얇게 은도금 4를 행하였다. 따라서 리드프레임 1의 반송시나 수송시 또는 리드프레임 1의 다이패드 7 상면에 열을 가하여 반도체칩 6을 고착시킬 시에 리드프레임 1의 동소재가 노출된 와이어 본딩 에어리어 2a 표면에 동 산화막이 형성되기 어렵다. 그러므로 리드프레임 1의 와이어 본딩 에어리어 2a 표면에 다이렉트 본딩에 의해서 와이어 3을 항상 확실하게 초음파 병용 열압착법등에 의해서 직접 접속할 수 있다. 또 리드프레임 1의 와이어 본딩 에어리어 2a 표면등에 극히 얇게 은도금 4를 행하였다. 따라서 와이어 본딩 에어리어 2a 표면에 다이렉트 본딩에 의해서 와이어 3을 초음파 병용 열압착법등에 의해서 직접 접속할 시에 와이어 본딩 에어리어 2a 표면에 행한 은도금 4가 장해가 되지않고, 동선등의 와이어 3을 리드프레임 1의 와이어 본딩 에어리어 2a를 형성하고 있는 동소재에 확실하고 일체적으로 접합시켜서 와이어 3을 와이어 본딩 에어리어 2a 표면에 확실하고 고신뢰성을 지니게 접속시킬 수 있다.
또 상술한 실시예에 있어서 동소재가 노출된 리드프레임 1을 상술한 시안화은칼리움등을 함유하는 도금액에 침지시켜 전해도금법에 의해서 이 리드프레임 1 주위표면에 은도금 4를 행하도록 하여 리드프레임 1 주위표면에 균일하고 극히 얇게 은도금 4를 행하도록 하여도 좋다.
또 경우에 따라서는 와이어 본딩 에어리어 2a 표면을 제외한 리드프레임 1 주위표면을 고무마스크등으로 덮은 후에 리드프레임 1을 도금액에 침지시키도록 하여 리드프레임 1의 와이어 본딩 에어리어 2a 표면에만 극히 얇게 은도금 4를 행하도록 하여도 좋다.
또 본 발명의 리드프레임은 전술한 동선이외에 금선, 알미늄선등의 와이어 3을 리드프레임의 동소재가 노출된 리드의 와이어 본딩 에어리어 2a 표면에 초음파 병용 열압착법등에 의해서 직접 접속하여 형성시키는 반도체장치에 사용하여도 좋으며 이 장치에 사용하면 금선, 알미늄선등의 와이어 3을 리드프레임의 동소재가 노출된 리드의 와이어 본딩 에어리어 2a 표면에 확실하고 용이하게 고신뢰성을 지니게 직접 접속시킬 수 있다.
이상 설명한 바와같이 본 발명의 리드프레임에 있어서는 동소재가 노출된 와이어 본딩 에어리어 표면에 극히 얇게 은도금을 행하도록 하였다. 따라서 리드프레임의 반송시나 수송시 또는 리드프레임의 다이패드 상면에 열을 가하여 반도체칩을 고착할 때등에 리드프레임의 동소재가 노출된 와이어 본딩 에어리어 표면에 동산화막이 형성되기 어렵다. 그러므로 본 발명의 리드프레임을 사용하여 반도체장치를 형성시키면 리드프레임의 와이어 본딩 에어리어 표면에 다이렉트 본딩에 의해서 와이어를 항상 확실하고 용이하게 초음파 병용 열압착법등에 의해서 직접 접속시킬 수 있다. 또 리드프레임 와이어 본딩 에어리어 표면에 동산화막이 형성되는 것을 방지하기 위하여 종래와 같이 리드프레임을 그 반송시나 수송시에 진공패킹 시키든지 리드프레임을 불활성 가스를 충만시킨 약환원성을 유지하는 분위기내에 놓아서 반도체칩의 전극과 리드프레임의 와이어로 초음파 병용 열압착법등에 의해서 접속시킬 필요가 없어진다.
또 와이어 본딩 에어리어 표면에 극히 얇게 은도금을 행하도록 하였다. 따라서 와이어 본딩 에어리어 표면을 덮는 은도금이 장해가 되지 않고 동선등의 와이어를 와이어 본딩 에어리어를 형성하고 있는 동소재에 일체적으로 접합시켜서 다이렉트 본딩에 의해서 와이어를 리드프레임의 와이어 본딩 에어리어 표면에 확실하게 고신뢰성을 지니게 초음파 병용 열압착법등에 의해서 쉽게 접속시킬 수 있다.
또 본 발명의 리드프레임에 의하면 은도금을 행한 와이어 본딩 에어리어 표면등의 경시변화에 의한 변색등을 억제할 수 있고, 리드프레임의 외관을 장기에 걸쳐 미려하게 유지할 수 있는 것이다.

Claims (1)

  1. 동도금을 행한 리드프레임(1) 또는 동 또는 동합금제 리드프레임(1)의 동소재가 노출된 와이어 본딩 에어리어(2a) 표면에 와이어(3)를 직접 접속하는 반도체 장치용 리드프레임에 있어서, 상기 리드프레임(1)의 적어도 상기 동소재가 노출된 와이어 본딩 에어리어(2a) 표면에 두께가 대략 0.1㎛ 이하의 은도금(4)을 행한 것을 특징으로 하는 반도체장치용 리드프레임.
KR1019880005384A 1987-07-14 1988-05-10 반도체 장치용 리드프레임 KR910008986B1 (ko)

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JP62-175481 1987-07-14
JP62175481A JPS6418246A (en) 1987-07-14 1987-07-14 Lead frame for semiconductor device

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KR910008986B1 true KR910008986B1 (ko) 1991-10-26

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Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0330341A (ja) * 1989-06-28 1991-02-08 Mitsubishi Electric Corp 半導体装置の製造方法及びその装置
JPH0394457A (ja) * 1989-09-06 1991-04-19 Matsushita Electron Corp リードフレームおよびその製造方法
KR920000127A (ko) * 1990-02-26 1992-01-10 미다 가쓰시게 반도체 패키지와 그것을 위한 리드프레임
JP2543619B2 (ja) * 1990-09-05 1996-10-16 新光電気工業株式会社 半導体装置用リ―ドフレ―ム
US5139890A (en) * 1991-09-30 1992-08-18 Olin Corporation Silver-coated electrical components
JP3228789B2 (ja) * 1992-07-11 2001-11-12 新光電気工業株式会社 樹脂用インサート部材の製造方法
JPH0714962A (ja) * 1993-04-28 1995-01-17 Mitsubishi Shindoh Co Ltd リードフレーム材およびリードフレーム
JPH07147365A (ja) * 1993-10-01 1995-06-06 Electroplating Eng Of Japan Co リードフレームの変形防止方法
US5650661A (en) * 1993-12-27 1997-07-22 National Semiconductor Corporation Protective coating combination for lead frames
US5436082A (en) * 1993-12-27 1995-07-25 National Semiconductor Corporation Protective coating combination for lead frames
US5728285A (en) * 1993-12-27 1998-03-17 National Semiconductor Corporation Protective coating combination for lead frames
US5527740A (en) * 1994-06-28 1996-06-18 Intel Corporation Manufacturing dual sided wire bonded integrated circuit chip packages using offset wire bonds and support block cavities
US5529682A (en) * 1995-06-26 1996-06-25 Motorola, Inc. Method for making semiconductor devices having electroplated leads
US5767480A (en) * 1995-07-28 1998-06-16 National Semiconductor Corporation Hole generation and lead forming for integrated circuit lead frames using laser machining
KR100266726B1 (ko) * 1995-09-29 2000-09-15 기타지마 요시토시 리드프레임과 이 리드프레임을 갖춘 반도체장치
US5729049A (en) 1996-03-19 1998-03-17 Micron Technology, Inc. Tape under frame for conventional-type IC package assembly
KR0183645B1 (ko) * 1996-03-26 1999-03-20 이대원 다층 구조의 도금층을 구비한 반도체 리드 프레임
US5717246A (en) 1996-07-29 1998-02-10 Micron Technology, Inc. Hybrid frame with lead-lock tape
TW448204B (en) * 1997-04-09 2001-08-01 Jeng Wu Shuen A method for catalytic depolymerization of polyethylene terephthalate
EP0946086A1 (en) * 1998-03-23 1999-09-29 STMicroelectronics S.r.l. Plated leadframes with cantilever leads
US6124150A (en) 1998-08-20 2000-09-26 Micron Technology, Inc. Transverse hybrid LOC package
US6838751B2 (en) * 2002-03-06 2005-01-04 Freescale Semiconductor Inc. Multi-row leadframe
US6667073B1 (en) * 2002-05-07 2003-12-23 Quality Platers Limited Leadframe for enhanced downbond registration during automatic wire bond process
US6867072B1 (en) * 2004-01-07 2005-03-15 Freescale Semiconductor, Inc. Flipchip QFN package and method therefor
US7301225B2 (en) * 2006-02-28 2007-11-27 Freescale Semiconductor, Inc. Multi-row lead frame
US20110193207A1 (en) * 2010-02-09 2011-08-11 Freescale Semiconductor, Inc Lead frame for semiconductor die
US8432024B2 (en) 2010-04-27 2013-04-30 Infineon Technologies Ag Integrated circuit including bond wire directly bonded to pad
US8822036B1 (en) * 2013-03-06 2014-09-02 Ut-Battelle, Llc Sintered silver joints via controlled topography of electronic packaging subcomponents

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3860835A (en) * 1971-02-10 1975-01-14 Us Navy Anti-compromise microelectronic circuit
US4182781A (en) * 1977-09-21 1980-01-08 Texas Instruments Incorporated Low cost method for forming elevated metal bumps on integrated circuit bodies employing an aluminum/palladium metallization base for electroless plating
US4628149A (en) * 1981-11-30 1986-12-09 Nippon Electric Co., Ltd. Substrate having a pattern of an alloy of gold and a noble and a base metal with the pattern isolated by oxides of the noble and the base metals
JPS59231844A (ja) * 1983-06-14 1984-12-26 Nec Corp 半導体装置用リ−ドフレ−ム

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JPS6418246A (en) 1989-01-23
US4894752A (en) 1990-01-16

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