JPS6418246A - Lead frame for semiconductor device - Google Patents

Lead frame for semiconductor device

Info

Publication number
JPS6418246A
JPS6418246A JP62175481A JP17548187A JPS6418246A JP S6418246 A JPS6418246 A JP S6418246A JP 62175481 A JP62175481 A JP 62175481A JP 17548187 A JP17548187 A JP 17548187A JP S6418246 A JPS6418246 A JP S6418246A
Authority
JP
Japan
Prior art keywords
lead frame
wire bonding
copper
substratum
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62175481A
Other languages
English (en)
Inventor
Akihiko Murata
Toshihiko Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP62175481A priority Critical patent/JPS6418246A/ja
Priority to KR1019880005384A priority patent/KR910008986B1/ko
Priority to US07/218,882 priority patent/US4894752A/en
Publication of JPS6418246A publication Critical patent/JPS6418246A/ja
Pending legal-status Critical Current

Links

Classifications

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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
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    • H01L23/495—Lead-frames or other flat leads
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12868—Group IB metal-base component alternative to platinum group metal-base component [e.g., precious metal, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12875—Platinum group metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12882—Cu-base component alternative to Ag-, Au-, or Ni-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12896—Ag-base component

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
JP62175481A 1987-07-14 1987-07-14 Lead frame for semiconductor device Pending JPS6418246A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62175481A JPS6418246A (en) 1987-07-14 1987-07-14 Lead frame for semiconductor device
KR1019880005384A KR910008986B1 (ko) 1987-07-14 1988-05-10 반도체 장치용 리드프레임
US07/218,882 US4894752A (en) 1987-07-14 1988-07-14 Lead frame for a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62175481A JPS6418246A (en) 1987-07-14 1987-07-14 Lead frame for semiconductor device

Publications (1)

Publication Number Publication Date
JPS6418246A true JPS6418246A (en) 1989-01-23

Family

ID=15996794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62175481A Pending JPS6418246A (en) 1987-07-14 1987-07-14 Lead frame for semiconductor device

Country Status (3)

Country Link
US (1) US4894752A (ja)
JP (1) JPS6418246A (ja)
KR (1) KR910008986B1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0394457A (ja) * 1989-09-06 1991-04-19 Matsushita Electron Corp リードフレームおよびその製造方法
DE19640256A1 (de) * 1995-09-29 1997-04-03 Dainippon Printing Co Ltd Anschlußrahmen, Verfahren zur teilweisen Edelplattierung des Anschlußrahmens und Halbleitereinrichtung mit Anschlußrahmen

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0330341A (ja) * 1989-06-28 1991-02-08 Mitsubishi Electric Corp 半導体装置の製造方法及びその装置
KR920000127A (ko) * 1990-02-26 1992-01-10 미다 가쓰시게 반도체 패키지와 그것을 위한 리드프레임
JP2543619B2 (ja) * 1990-09-05 1996-10-16 新光電気工業株式会社 半導体装置用リ―ドフレ―ム
US5139890A (en) * 1991-09-30 1992-08-18 Olin Corporation Silver-coated electrical components
JP3228789B2 (ja) * 1992-07-11 2001-11-12 新光電気工業株式会社 樹脂用インサート部材の製造方法
JPH0714962A (ja) * 1993-04-28 1995-01-17 Mitsubishi Shindoh Co Ltd リードフレーム材およびリードフレーム
JPH07147365A (ja) * 1993-10-01 1995-06-06 Electroplating Eng Of Japan Co リードフレームの変形防止方法
US5728285A (en) * 1993-12-27 1998-03-17 National Semiconductor Corporation Protective coating combination for lead frames
US5436082A (en) * 1993-12-27 1995-07-25 National Semiconductor Corporation Protective coating combination for lead frames
US5650661A (en) * 1993-12-27 1997-07-22 National Semiconductor Corporation Protective coating combination for lead frames
US5527740A (en) * 1994-06-28 1996-06-18 Intel Corporation Manufacturing dual sided wire bonded integrated circuit chip packages using offset wire bonds and support block cavities
US5529682A (en) * 1995-06-26 1996-06-25 Motorola, Inc. Method for making semiconductor devices having electroplated leads
US5767480A (en) * 1995-07-28 1998-06-16 National Semiconductor Corporation Hole generation and lead forming for integrated circuit lead frames using laser machining
US5729049A (en) 1996-03-19 1998-03-17 Micron Technology, Inc. Tape under frame for conventional-type IC package assembly
KR0183645B1 (ko) * 1996-03-26 1999-03-20 이대원 다층 구조의 도금층을 구비한 반도체 리드 프레임
US5717246A (en) 1996-07-29 1998-02-10 Micron Technology, Inc. Hybrid frame with lead-lock tape
TW448204B (en) * 1997-04-09 2001-08-01 Jeng Wu Shuen A method for catalytic depolymerization of polyethylene terephthalate
EP0946086A1 (en) * 1998-03-23 1999-09-29 STMicroelectronics S.r.l. Plated leadframes with cantilever leads
US6124150A (en) 1998-08-20 2000-09-26 Micron Technology, Inc. Transverse hybrid LOC package
US6838751B2 (en) * 2002-03-06 2005-01-04 Freescale Semiconductor Inc. Multi-row leadframe
US6667073B1 (en) 2002-05-07 2003-12-23 Quality Platers Limited Leadframe for enhanced downbond registration during automatic wire bond process
US6867072B1 (en) * 2004-01-07 2005-03-15 Freescale Semiconductor, Inc. Flipchip QFN package and method therefor
US7301225B2 (en) * 2006-02-28 2007-11-27 Freescale Semiconductor, Inc. Multi-row lead frame
US20110193207A1 (en) * 2010-02-09 2011-08-11 Freescale Semiconductor, Inc Lead frame for semiconductor die
US8432024B2 (en) 2010-04-27 2013-04-30 Infineon Technologies Ag Integrated circuit including bond wire directly bonded to pad
US8822036B1 (en) * 2013-03-06 2014-09-02 Ut-Battelle, Llc Sintered silver joints via controlled topography of electronic packaging subcomponents

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59231844A (ja) * 1983-06-14 1984-12-26 Nec Corp 半導体装置用リ−ドフレ−ム

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3860835A (en) * 1971-02-10 1975-01-14 Us Navy Anti-compromise microelectronic circuit
US4182781A (en) * 1977-09-21 1980-01-08 Texas Instruments Incorporated Low cost method for forming elevated metal bumps on integrated circuit bodies employing an aluminum/palladium metallization base for electroless plating
US4628149A (en) * 1981-11-30 1986-12-09 Nippon Electric Co., Ltd. Substrate having a pattern of an alloy of gold and a noble and a base metal with the pattern isolated by oxides of the noble and the base metals

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59231844A (ja) * 1983-06-14 1984-12-26 Nec Corp 半導体装置用リ−ドフレ−ム

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0394457A (ja) * 1989-09-06 1991-04-19 Matsushita Electron Corp リードフレームおよびその製造方法
DE19640256A1 (de) * 1995-09-29 1997-04-03 Dainippon Printing Co Ltd Anschlußrahmen, Verfahren zur teilweisen Edelplattierung des Anschlußrahmens und Halbleitereinrichtung mit Anschlußrahmen
DE19640256B4 (de) * 1995-09-29 2004-04-08 Dai Nippon Printing Co., Ltd. Anschlußrahmen, Verfahren zur Edelmetallplattierung des Anschlußrahmens und Halbleitereinrichtung mit Anschlußrahmen

Also Published As

Publication number Publication date
US4894752A (en) 1990-01-16
KR890017802A (ko) 1989-12-18
KR910008986B1 (ko) 1991-10-26

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