KR910005733A - 자기커플 플래너 플라즈마를 만드는 방법과 장치 - Google Patents
자기커플 플래너 플라즈마를 만드는 방법과 장치 Download PDFInfo
- Publication number
- KR910005733A KR910005733A KR1019900012506A KR900012506A KR910005733A KR 910005733 A KR910005733 A KR 910005733A KR 1019900012506 A KR1019900012506 A KR 1019900012506A KR 900012506 A KR900012506 A KR 900012506A KR 910005733 A KR910005733 A KR 910005733A
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- South Korea
- Prior art keywords
- planar
- enclosed
- coil
- plasma
- radio frequency
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 12
- 230000008878 coupling Effects 0.000 claims 3
- 238000010168 coupling process Methods 0.000 claims 3
- 238000005859 coupling reaction Methods 0.000 claims 3
- 150000002500 ions Chemical class 0.000 claims 1
- 230000004907 flux Effects 0.000 abstract 1
- 238000009832 plasma treatment Methods 0.000 abstract 1
- 150000003254 radicals Chemical class 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- ing And Chemical Polishing (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 원리에 따라 플래너 플라즈마를 만드는 장치를 나타낸 도면.
제2도는 제1도의 장치의 횡단면도.
제4도는 제1도의 장치에 사용되는 링을 나타내는 프로세스 가스의 상세도.
Claims (10)
- 유전쉴드에 의하여 적어도 부분적으로 경계를 이루는 내부를 갖는 에워싸는 부분과, 그 에워싸는 부분의 내부에 프로세스 가스를 들여보내느 수단과, 유전쉴드 근처의 에워싸는 도전성 플래너 코일과, 첫째로 코일에 무선 주파수원의 임피던스를 맞추기 위한 수단과 둘째로 공명을 일으키기 위한 결과적인 회로를 동조시키기 위한 수단을 포함하며 코일에 무선 주파수원을 커플링시키기 위한 수단으로 구성되어 플래너 플라즈마를 만드는 장치.
- 유전쉴드에 의하여 적어도 부분적으로 경계를 이루는 내부를 갖는 에워싸는 부분과, 미리 선정된 평면에서 처리되도록 물체를 지지하기 위하여 에워싸는 부분안에 있는 수단과, 유전 쉴드 가까이에서 에워싸는 부분밖에 설치되어 있되 미리 선정된 평면에 대해 평행인 도전성 플래너 코일과, 플래너 코일에 무선 주파수원을 커플링시키기 위한 수단과, 제어된 압력하에엇 에워 싸는 부분안으로 프로세스 가스를 들여보내는 수단으로 구성되어 물체를 플라즈마로 처리하는 장치.
- 제2항에 있어서, 코일이 나선형으로 되어 있는 장치.
- 제2항에 있어서, 코일의 동심원 루프로 되어 있는 장치.
- 제5항에 있어서, 무선 주파수 발생기를 커플링시키기 위한 수단이 첫째로 플래너 코일에 대한 무선 주파수원의 임피던스를 맞추기 위한 수단과 둘째로 공명을 일으키기 위해 회로를 동조시키기 위한 수단을 포함하는 장치.
- 제2항에 있어서, 프로세스 가스를 들여보내기 위한 수단이 유전쉴드에 외접하는 다수개의 포트를 포함하는 장치.
- 에워싸는 부분안에 물체를 위치시키고, 제어된 압력에서 에워싸는 부분에 프로세스 가스를 들여보내며, 또 에워싸는 부분안에 형성된 유전쉴드 가까이에서 에워싸는 부분밖에 위치한 플래너 코일에 무선 주파수 전류를 공명시키며 이에 의해 코일에 평행인 플래너 플라즈마가 에워싸는 부분안에 형성된 것으로 구성되어 플라즈마로 물체를 처리하는 방법.
- 제7항에 있어서, 물체가 플래너 코일에 평행한 평면으로 되어 있는 플래너 물체가 되도록 하는 방법.
- 제7항에 있어서, 프로세스 가스가 에칭액이 되도록 하는 방법.
- 제7항에 있어서, 물체가 지지되는 에워싸는 부분안엥서 플래너 코일과 표면을 가로질러서 무선 주파수 전위를 가하는 것으로 구성되어 이에 의해 이온과 래디컬이 플래너 물체에 수직인 방향으로 가속되도록 하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US393,504 | 1989-08-14 | ||
US07/393,504 US4948458A (en) | 1989-08-14 | 1989-08-14 | Method and apparatus for producing magnetically-coupled planar plasma |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910005733A true KR910005733A (ko) | 1991-03-30 |
KR100188076B1 KR100188076B1 (ko) | 1999-06-01 |
Family
ID=23554962
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900012506A KR100188076B1 (ko) | 1989-08-14 | 1990-08-14 | 자기 결합성 플래너 플라즈마 형성 방법 및 장치 |
Country Status (8)
Country | Link |
---|---|
US (1) | US4948458A (ko) |
EP (1) | EP0413282B1 (ko) |
JP (2) | JP3114873B2 (ko) |
KR (1) | KR100188076B1 (ko) |
AT (1) | ATE161357T1 (ko) |
DE (1) | DE69031820T2 (ko) |
DK (1) | DK0413282T3 (ko) |
ES (1) | ES2110955T3 (ko) |
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-
1989
- 1989-08-14 US US07/393,504 patent/US4948458A/en not_active Expired - Lifetime
-
1990
- 1990-08-03 JP JP02205302A patent/JP3114873B2/ja not_active Expired - Lifetime
- 1990-08-11 AT AT90115478T patent/ATE161357T1/de not_active IP Right Cessation
- 1990-08-11 DE DE69031820T patent/DE69031820T2/de not_active Expired - Lifetime
- 1990-08-11 EP EP90115478A patent/EP0413282B1/en not_active Expired - Lifetime
- 1990-08-11 ES ES90115478T patent/ES2110955T3/es not_active Expired - Lifetime
- 1990-08-11 DK DK90115478T patent/DK0413282T3/da active
- 1990-08-14 KR KR1019900012506A patent/KR100188076B1/ko not_active IP Right Cessation
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1999
- 1999-07-19 JP JP20525599A patent/JP3224529B2/ja not_active Expired - Lifetime
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DK0413282T3 (da) | 1998-08-24 |
JP2000058297A (ja) | 2000-02-25 |
JP3114873B2 (ja) | 2000-12-04 |
JP3224529B2 (ja) | 2001-10-29 |
DE69031820T2 (de) | 1998-06-25 |
EP0413282A2 (en) | 1991-02-20 |
JPH0379025A (ja) | 1991-04-04 |
DE69031820D1 (de) | 1998-01-29 |
ES2110955T3 (es) | 1998-03-01 |
KR100188076B1 (ko) | 1999-06-01 |
ATE161357T1 (de) | 1998-01-15 |
US4948458A (en) | 1990-08-14 |
EP0413282A3 (en) | 1991-07-24 |
EP0413282B1 (en) | 1997-12-17 |
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