KR910004846B1 - 양각형(positive type) 감광성 내식막 조성물 - Google Patents
양각형(positive type) 감광성 내식막 조성물 Download PDFInfo
- Publication number
- KR910004846B1 KR910004846B1 KR1019830002297A KR830002297A KR910004846B1 KR 910004846 B1 KR910004846 B1 KR 910004846B1 KR 1019830002297 A KR1019830002297 A KR 1019830002297A KR 830002297 A KR830002297 A KR 830002297A KR 910004846 B1 KR910004846 B1 KR 910004846B1
- Authority
- KR
- South Korea
- Prior art keywords
- methylstyrene
- hydroxy
- molecular weight
- polyhydroxy
- novolak resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C1/00—Photosensitive materials
- G03C1/52—Compositions containing diazo compounds as photosensitive substances
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57089482A JPS58205147A (ja) | 1982-05-25 | 1982-05-25 | ポジ型フオトレジスト組成物 |
| JP89,482 | 1982-05-25 | ||
| JP89482 | 1982-05-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR840004589A KR840004589A (ko) | 1984-10-22 |
| KR910004846B1 true KR910004846B1 (ko) | 1991-07-13 |
Family
ID=13971950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019830002297A Expired KR910004846B1 (ko) | 1982-05-25 | 1983-05-25 | 양각형(positive type) 감광성 내식막 조성물 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4696886A (enExample) |
| EP (1) | EP0095388B1 (enExample) |
| JP (1) | JPS58205147A (enExample) |
| KR (1) | KR910004846B1 (enExample) |
| CA (1) | CA1250776A (enExample) |
| DE (1) | DE3374610D1 (enExample) |
| GB (1) | GB2124400B (enExample) |
| HK (1) | HK8787A (enExample) |
| MX (1) | MX162307A (enExample) |
| MY (1) | MY8600663A (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60162249A (ja) * | 1984-02-01 | 1985-08-24 | Japan Synthetic Rubber Co Ltd | ポジ型レジスト組成物 |
| DE3406927A1 (de) * | 1984-02-25 | 1985-08-29 | Hoechst Ag, 6230 Frankfurt | Strahlungsempfindliches gemisch auf basis von saeurespaltbaren verbindungen |
| JPS60189739A (ja) * | 1984-03-09 | 1985-09-27 | Japan Synthetic Rubber Co Ltd | ポジ型感光性樹脂組成物 |
| DE3421448A1 (de) * | 1984-06-08 | 1985-12-12 | Hoechst Ag, 6230 Frankfurt | Perfluoralkylgruppen aufweisende polymere, sie enthaltende reproduktionsschichten und deren verwendung fuer den wasserlosen offsetdruck |
| JPS62191850A (ja) * | 1986-02-17 | 1987-08-22 | Nec Corp | ポジレジスト材料 |
| US5753406A (en) * | 1988-10-18 | 1998-05-19 | Japan Synthetic Rubber Co., Ltd. | Radiation-sensitive resin composition |
| JP2697039B2 (ja) * | 1988-12-06 | 1998-01-14 | 住友化学工業株式会社 | ポジ型レジスト組成物の製造方法 |
| JPH02291559A (ja) * | 1989-05-01 | 1990-12-03 | Toyo Gosei Kogyo Kk | 遠紫外光用ホトレジスト組成物 |
| JP2849623B2 (ja) * | 1989-08-15 | 1999-01-20 | コニカ株式会社 | 画像形成方法 |
| JP2567282B2 (ja) * | 1989-10-02 | 1996-12-25 | 日本ゼオン株式会社 | ポジ型レジスト組成物 |
| EP0461388B1 (en) * | 1990-05-24 | 1996-09-04 | Sumitomo Chemical Company, Limited | Positive resist composition |
| JP2847321B2 (ja) * | 1990-08-14 | 1999-01-20 | 日本石油株式会社 | ポジ型フォトレジスト組成物 |
| KR950004908B1 (ko) * | 1992-09-09 | 1995-05-15 | 삼성전자주식회사 | 포토 레지스트 조성물 및 이를 이용한 패턴형성방법 |
| JP3203995B2 (ja) * | 1993-12-24 | 2001-09-04 | ジェイエスアール株式会社 | 感放射線性樹脂組成物 |
| US5561194A (en) * | 1995-03-29 | 1996-10-01 | International Business Machines Corporation | Photoresist composition including polyalkylmethacrylate co-polymer of polyhydroxystyrene |
| WO1997034197A1 (en) * | 1996-03-11 | 1997-09-18 | Hoechst Celanese Corporation | Resin compositions for photoresist applications |
| JP3633179B2 (ja) * | 1997-01-27 | 2005-03-30 | Jsr株式会社 | ポジ型フォトレジスト組成物 |
| US6630285B2 (en) * | 1998-10-15 | 2003-10-07 | Mitsui Chemicals, Inc. | Positive sensitive resin composition and a process for forming a resist pattern therewith |
| TWI417656B (zh) * | 2010-04-08 | 2013-12-01 | Founder Fine Chemical Industry Co Ltd | 輻射敏感組成物 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA774047A (en) * | 1963-12-09 | 1967-12-19 | Shipley Company | Light-sensitive material and process for the development thereof |
| US3551154A (en) * | 1966-12-28 | 1970-12-29 | Ferrania Spa | Light sensitive article comprising a quinone diazide and polymeric binder |
| GB1375461A (enExample) * | 1972-05-05 | 1974-11-27 | ||
| JPS5024641B2 (enExample) * | 1972-10-17 | 1975-08-18 | ||
| US4139384A (en) * | 1974-02-21 | 1979-02-13 | Fuji Photo Film Co., Ltd. | Photosensitive polymeric o-quinone diazide containing lithographic printing plate and process of using the plate |
| JPS51120712A (en) * | 1975-04-15 | 1976-10-22 | Toshiba Corp | Positive type photo-resistant compound |
| JPS51120713A (en) * | 1975-04-15 | 1976-10-22 | Toshiba Corp | Positive type photo-resistant compound |
| US4244181A (en) * | 1977-12-22 | 1981-01-13 | The Garrett Corporation | Variable geometry gas turbine engine fuel and guide vane control |
| JPS5730829A (en) * | 1980-08-01 | 1982-02-19 | Hitachi Ltd | Micropattern formation method |
| US4439516A (en) * | 1982-03-15 | 1984-03-27 | Shipley Company Inc. | High temperature positive diazo photoresist processing using polyvinyl phenol |
-
1982
- 1982-05-25 JP JP57089482A patent/JPS58205147A/ja active Granted
-
1983
- 1983-05-24 MX MX197399A patent/MX162307A/es unknown
- 1983-05-25 EP EP83303026A patent/EP0095388B1/en not_active Expired
- 1983-05-25 GB GB08314459A patent/GB2124400B/en not_active Expired
- 1983-05-25 CA CA000428887A patent/CA1250776A/en not_active Expired
- 1983-05-25 DE DE8383303026T patent/DE3374610D1/de not_active Expired
- 1983-05-25 KR KR1019830002297A patent/KR910004846B1/ko not_active Expired
-
1985
- 1985-06-24 US US06/748,064 patent/US4696886A/en not_active Expired - Fee Related
-
1986
- 1986-12-30 MY MY663/86A patent/MY8600663A/xx unknown
-
1987
- 1987-01-22 HK HK87/87A patent/HK8787A/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| GB8314459D0 (en) | 1983-06-29 |
| JPH0340379B2 (enExample) | 1991-06-18 |
| MY8600663A (en) | 1986-12-31 |
| EP0095388B1 (en) | 1987-11-19 |
| GB2124400A (en) | 1984-02-15 |
| US4696886A (en) | 1987-09-29 |
| DE3374610D1 (en) | 1987-12-23 |
| EP0095388A2 (en) | 1983-11-30 |
| JPS58205147A (ja) | 1983-11-30 |
| KR840004589A (ko) | 1984-10-22 |
| MX162307A (es) | 1991-04-23 |
| GB2124400B (en) | 1985-11-06 |
| EP0095388A3 (en) | 1984-05-30 |
| CA1250776A (en) | 1989-03-07 |
| HK8787A (en) | 1987-01-28 |
Similar Documents
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|---|---|---|
| KR910004846B1 (ko) | 양각형(positive type) 감광성 내식막 조성물 | |
| US5964951A (en) | Rinsing solution | |
| JPH0654384B2 (ja) | ポジ型ホトレジスト組成物 | |
| JPS617837A (ja) | ポジ型の感放射被覆液 | |
| US10976659B2 (en) | Photoresists comprising novolak resin blends | |
| KR950001004B1 (ko) | 방사선 감응성 포지티브 작용성 감광성 내식막 조성물 및 감광성 내식막을 제조하는 방법 | |
| US5302490A (en) | Radiation sensitive compositions comprising blends of an aliphatic novolak resin and an aromatic novolak resin | |
| JP3707793B2 (ja) | 光活性化合物 | |
| JPH07333840A (ja) | ポジ型ホトレジスト組成物 | |
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| JP3376222B2 (ja) | 放射線感応性組成物 | |
| CN1094208C (zh) | 光敏正作用光敏组合物及其生产方法 | |
| US6338930B1 (en) | Positive photoresist layer and a method for using the same | |
| JP3686683B2 (ja) | (1,2− ナフトキノン−2− ジアジド) スルフォン酸エステル、それを用いて調製した放射線感応性混合物および放射線感応性記録材料 | |
| JPH0456973B2 (enExample) | ||
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| JPS63136040A (ja) | ポジ型感光性組成物 | |
| JP2619050B2 (ja) | ポジ型感光性組成物 | |
| JPH01235947A (ja) | ポジ型フォトレジスト薄膜 | |
| JPS59172643A (ja) | ポジ型フオトレジスト組成物 | |
| JPS62159142A (ja) | ポジ型ホトレジスト組成物 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| A201 | Request for examination | ||
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| G160 | Decision to publish patent application | ||
| PG1605 | Publication of application before grant of patent |
St.27 status event code: A-2-2-Q10-Q13-nap-PG1605 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1 |
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| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4 |
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| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5 |
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| FPAY | Annual fee payment |
Payment date: 19960711 Year of fee payment: 6 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 6 |
|
| LAPS | Lapse due to unpaid annual fee | ||
| PC1903 | Unpaid annual fee |
St.27 status event code: A-4-4-U10-U13-oth-PC1903 Not in force date: 19970714 Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE |
|
| PC1903 | Unpaid annual fee |
St.27 status event code: N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 19970714 |