US5063267A
(en)
*
|
1990-11-28 |
1991-11-05 |
Dow Corning Corporation |
Hydrogen silsesquioxane resin fractions and their use as coating materials
|
US5238787A
(en)
*
|
1991-04-22 |
1993-08-24 |
Dow Corning Corporation |
Photodelineable coatings from hydrogen silsesquioxane resin
|
GB9115818D0
(en)
*
|
1991-07-23 |
1991-09-04 |
Impact International Inc |
Oligoorganosilasesquioxanes
|
JPH0588413A
(ja)
*
|
1991-09-30 |
1993-04-09 |
Toray Dow Corning Silicone Co Ltd |
キヤリアコーテイング用シリコーン樹脂組成物およびキヤリアの製造方法
|
JP3161780B2
(ja)
*
|
1991-09-30 |
2001-04-25 |
東レ・ダウコーニング・シリコーン株式会社 |
α,ω−ジヒドロキシフルオロアルキルメチルポリシロキサンの製造方法
|
US5436029A
(en)
*
|
1992-07-13 |
1995-07-25 |
Dow Corning Corporation |
Curing silicon hydride containing materials by exposure to nitrous oxide
|
CA2104340A1
(en)
*
|
1992-08-31 |
1994-03-01 |
Grish Chandra |
Hermetic protection for integrated circuits
|
DE4230149A1
(de)
*
|
1992-09-09 |
1994-03-17 |
Heraeus Noblelight Gmbh |
Verfahren zur Herstellung von oxydischen Schutzschichten
|
US5310583A
(en)
*
|
1992-11-02 |
1994-05-10 |
Dow Corning Corporation |
Vapor phase deposition of hydrogen silsesquioxane resin in the presence of nitrous oxide
|
US5458912A
(en)
|
1993-03-08 |
1995-10-17 |
Dow Corning Corporation |
Tamper-proof electronic coatings
|
TW492989B
(en)
*
|
1993-03-19 |
2002-07-01 |
Dow Corning |
Stabilization of hydrogen silsesquioxane resin solutions
|
TW257785B
(ko)
*
|
1993-05-17 |
1995-09-21 |
Dow Corning |
|
US5354631A
(en)
*
|
1993-06-08 |
1994-10-11 |
Valence Technology, Inc. |
Enhanced lithium surface
|
US5441765A
(en)
*
|
1993-09-22 |
1995-08-15 |
Dow Corning Corporation |
Method of forming Si-O containing coatings
|
US6423651B1
(en)
|
1993-12-27 |
2002-07-23 |
Kawasaki Steel Corporation |
Insulating film of semiconductor device and coating solution for forming insulating film and method of manufacturing insulating film
|
JP3703116B2
(ja)
*
|
1995-07-05 |
2005-10-05 |
信越化学工業株式会社 |
オルガノポリシロキサン樹脂の製造方法
|
CA2202653A1
(en)
*
|
1995-08-15 |
1997-02-27 |
Akihito Saitoh |
Curable polymethyl silsesouioxane composition
|
AU6973296A
(en)
*
|
1995-09-12 |
1997-04-01 |
Gelest, Inc. |
Beta-substituted organosilsesquioxanes and use thereof
|
US6770726B1
(en)
|
1995-09-12 |
2004-08-03 |
Gelest, Inc. |
β-substituted organosilsesquioxane polymers
|
US5985229A
(en)
*
|
1995-09-21 |
1999-11-16 |
Toagosei Co., Ltd. |
Solid silica derivative and process for producing the same
|
US5693701A
(en)
|
1995-10-26 |
1997-12-02 |
Dow Corning Corporation |
Tamper-proof electronic coatings
|
US5753374A
(en)
*
|
1995-11-27 |
1998-05-19 |
Dow Corning Corporation |
Protective electronic coating
|
US5609925A
(en)
|
1995-12-04 |
1997-03-11 |
Dow Corning Corporation |
Curing hydrogen silsesquioxane resin with an electron beam
|
US5780163A
(en)
*
|
1996-06-05 |
1998-07-14 |
Dow Corning Corporation |
Multilayer coating for microelectronic devices
|
US5693565A
(en)
*
|
1996-07-15 |
1997-12-02 |
Dow Corning Corporation |
Semiconductor chips suitable for known good die testing
|
US5711987A
(en)
*
|
1996-10-04 |
1998-01-27 |
Dow Corning Corporation |
Electronic coatings
|
US5807611A
(en)
*
|
1996-10-04 |
1998-09-15 |
Dow Corning Corporation |
Electronic coatings
|
US5776235A
(en)
*
|
1996-10-04 |
1998-07-07 |
Dow Corning Corporation |
Thick opaque ceramic coatings
|
US6020410A
(en)
*
|
1996-10-29 |
2000-02-01 |
Alliedsignal Inc. |
Stable solution of a silsesquioxane or siloxane resin and a silicone solvent
|
US20100273011A1
(en)
*
|
1996-12-20 |
2010-10-28 |
Bianxiao Zhong |
Silicone Composition, Silicone Adhesive, Coated and Laminated Substrates
|
US5707681A
(en)
*
|
1997-02-07 |
1998-01-13 |
Dow Corning Corporation |
Method of producing coatings on electronic substrates
|
US6015457A
(en)
*
|
1997-04-21 |
2000-01-18 |
Alliedsignal Inc. |
Stable inorganic polymers
|
US6743856B1
(en)
|
1997-04-21 |
2004-06-01 |
Honeywell International Inc. |
Synthesis of siloxane resins
|
US6143855A
(en)
*
|
1997-04-21 |
2000-11-07 |
Alliedsignal Inc. |
Organohydridosiloxane resins with high organic content
|
US6218497B1
(en)
|
1997-04-21 |
2001-04-17 |
Alliedsignal Inc. |
Organohydridosiloxane resins with low organic content
|
EP1826231A3
(en)
*
|
1997-04-21 |
2007-09-12 |
AlliedSignal Inc. |
Organohydridosiloxane Resins With High Organic Content
|
TW392288B
(en)
|
1997-06-06 |
2000-06-01 |
Dow Corning |
Thermally stable dielectric coatings
|
US5866197A
(en)
*
|
1997-06-06 |
1999-02-02 |
Dow Corning Corporation |
Method for producing thick crack-free coating from hydrogen silsequioxane resin
|
US6018002A
(en)
*
|
1998-02-06 |
2000-01-25 |
Dow Corning Corporation |
Photoluminescent material from hydrogen silsesquioxane resin
|
US6177199B1
(en)
|
1999-01-07 |
2001-01-23 |
Alliedsignal Inc. |
Dielectric films from organohydridosiloxane resins with low organic content
|
US6218020B1
(en)
|
1999-01-07 |
2001-04-17 |
Alliedsignal Inc. |
Dielectric films from organohydridosiloxane resins with high organic content
|
GB9812425D0
(en)
|
1998-06-10 |
1998-08-05 |
Dow Corning |
Electroless metal disposition on silyl hyride functional resin
|
US5906859A
(en)
*
|
1998-07-10 |
1999-05-25 |
Dow Corning Corporation |
Method for producing low dielectric coatings from hydrogen silsequioxane resin
|
KR100804873B1
(ko)
*
|
1999-06-10 |
2008-02-20 |
얼라이드시그날 인코퍼레이티드 |
포토리소그래피용 sog 반사방지 코팅
|
US6287477B1
(en)
|
1999-10-18 |
2001-09-11 |
Honeywell International Inc. |
Solvents for processing silsesquioxane and siloxane resins
|
US6472076B1
(en)
|
1999-10-18 |
2002-10-29 |
Honeywell International Inc. |
Deposition of organosilsesquioxane films
|
US6440550B1
(en)
|
1999-10-18 |
2002-08-27 |
Honeywell International Inc. |
Deposition of fluorosilsesquioxane films
|
US6572974B1
(en)
|
1999-12-06 |
2003-06-03 |
The Regents Of The University Of Michigan |
Modification of infrared reflectivity using silicon dioxide thin films derived from silsesquioxane resins
|
US7011868B2
(en)
*
|
2000-03-20 |
2006-03-14 |
Axcelis Technologies, Inc. |
Fluorine-free plasma curing process for porous low-k materials
|
US6913796B2
(en)
*
|
2000-03-20 |
2005-07-05 |
Axcelis Technologies, Inc. |
Plasma curing process for porous low-k materials
|
US6759098B2
(en)
|
2000-03-20 |
2004-07-06 |
Axcelis Technologies, Inc. |
Plasma curing of MSQ-based porous low-k film materials
|
US6576300B1
(en)
|
2000-03-20 |
2003-06-10 |
Dow Corning Corporation |
High modulus, low dielectric constant coatings
|
US6558755B2
(en)
|
2000-03-20 |
2003-05-06 |
Dow Corning Corporation |
Plasma curing process for porous silica thin film
|
US6368400B1
(en)
*
|
2000-07-17 |
2002-04-09 |
Honeywell International |
Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography
|
US6399210B1
(en)
|
2000-11-27 |
2002-06-04 |
Dow Corning Corporation |
Alkoxyhydridosiloxane resins
|
GB2372996A
(en)
*
|
2001-03-10 |
2002-09-11 |
Dow Corning |
Preparation of silicone resins
|
US6632748B2
(en)
|
2001-03-27 |
2003-10-14 |
Samsung Electronics Co., Ltd. |
Composition for preparing substances having nano-pores
|
US6756085B2
(en)
*
|
2001-09-14 |
2004-06-29 |
Axcelis Technologies, Inc. |
Ultraviolet curing processes for advanced low-k materials
|
KR100532915B1
(ko)
*
|
2002-10-29 |
2005-12-02 |
삼성전자주식회사 |
단당류계 또는 올리고당류계 포로젠을 포함하는 다공성층간 절연막을 형성하기 위한 조성물
|
KR100488347B1
(ko)
*
|
2002-10-31 |
2005-05-10 |
삼성전자주식회사 |
실록산계 수지 및 이를 이용한 반도체 층간 절연막의형성방법
|
KR100533538B1
(ko)
|
2002-12-03 |
2005-12-05 |
삼성전자주식회사 |
새로운 기공형성물질을 포함하는 다공성 층간 절연막을형성하기 위한 조성물
|
US20070027225A1
(en)
*
|
2002-12-03 |
2007-02-01 |
Lyu Yi Y |
Composition for preparing porous dielectric thin films
|
US20050260420A1
(en)
*
|
2003-04-01 |
2005-11-24 |
Collins Martha J |
Low dielectric materials and methods for making same
|
KR100506695B1
(ko)
*
|
2003-06-02 |
2005-08-08 |
삼성전자주식회사 |
실록산계 수지 및 이를 이용한 반도체 층간 절연막
|
JP4465233B2
(ja)
|
2003-06-30 |
2010-05-19 |
三星電子株式会社 |
多官能性環状シロキサン化合物、この化合物から製造されたシロキサン系重合体及びこの重合体を用いた絶縁膜の製造方法
|
KR100507967B1
(ko)
*
|
2003-07-01 |
2005-08-10 |
삼성전자주식회사 |
실록산계 수지 및 이를 이용한 반도체 층간 절연막
|
EP1660561B1
(en)
*
|
2003-07-03 |
2014-02-12 |
Dow Corning Corporation |
Photosensitive silsesquioxane resin
|
KR100504291B1
(ko)
*
|
2003-07-14 |
2005-07-27 |
삼성전자주식회사 |
게르마늄을 포함하는 실록산계 수지 및 이를 이용한반도체 층간 절연막 형성 방법
|
KR20050024721A
(ko)
*
|
2003-09-01 |
2005-03-11 |
삼성전자주식회사 |
신규 실록산계 수지 및 이를 이용한 반도체 층간 절연막
|
KR100979355B1
(ko)
*
|
2003-10-09 |
2010-08-31 |
삼성전자주식회사 |
다반응성 환형 실리케이트 화합물, 상기 화합물로부터제조된 실록산계 중합체 및 상기 중합체를 이용한 절연막제조방법
|
KR20050040275A
(ko)
*
|
2003-10-28 |
2005-05-03 |
삼성전자주식회사 |
절연막 형성용 조성물 및 이를 이용한 절연막 또는 절연막패턴의 형성방법
|
US8053159B2
(en)
|
2003-11-18 |
2011-11-08 |
Honeywell International Inc. |
Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
|
US7470634B2
(en)
*
|
2003-11-24 |
2008-12-30 |
Samsung Electronics Co., Ltd. |
Method for forming interlayer dielectric film for semiconductor device by using polyhedral molecular silsesquioxane
|
KR101007807B1
(ko)
*
|
2003-12-13 |
2011-01-14 |
삼성전자주식회사 |
다반응성 선형 실록산 화합물, 상기 화합물로부터 제조된실록산 중합체 및 상기 중합체를 이용한 절연막 제조방법
|
KR101157230B1
(ko)
*
|
2004-08-17 |
2012-06-15 |
삼성코닝정밀소재 주식회사 |
나노 기공을 포함하는 물질을 형성하기 위한 조성물
|
KR20060020830A
(ko)
*
|
2004-09-01 |
2006-03-07 |
삼성코닝 주식회사 |
계면활성제를 템플릿으로 이용한 저유전성 메조포러스박막의 제조방법
|
EP1789598B1
(en)
|
2004-09-17 |
2009-05-27 |
Dow Corning Corporation |
Siloxane composition, agglomerate, and method of preparing agglomerate
|
KR101083228B1
(ko)
*
|
2004-10-07 |
2011-11-11 |
삼성코닝정밀소재 주식회사 |
칼릭스 아렌 유도체를 포함하는 나노 기공을 갖는 물질을형성하기 위한 조성물
|
WO2006049720A1
(en)
*
|
2004-11-02 |
2006-05-11 |
Dow Corning Corporation |
Resist composition
|
KR20060039628A
(ko)
*
|
2004-11-03 |
2006-05-09 |
삼성코닝 주식회사 |
용매확산이 억제된 저유전 다공성 박막
|
KR20060057778A
(ko)
*
|
2004-11-24 |
2006-05-29 |
삼성코닝 주식회사 |
저유전성 메조포러스 박막의 제조방법
|
KR101067596B1
(ko)
*
|
2004-12-01 |
2011-09-27 |
삼성코닝정밀소재 주식회사 |
저유전 다공성 박막의 제조방법
|
KR20060068348A
(ko)
*
|
2004-12-16 |
2006-06-21 |
삼성코닝 주식회사 |
실록산계 중합체 및 상기 중합체를 이용한 절연막 제조방법
|
KR101202955B1
(ko)
*
|
2004-12-31 |
2012-11-19 |
삼성코닝정밀소재 주식회사 |
다공성 나노 입자를 포함하는 저유전 박막 형성용 조성물및 이를 이용한 저유전 박막의 제조방법
|
KR101119141B1
(ko)
*
|
2005-01-20 |
2012-03-19 |
삼성코닝정밀소재 주식회사 |
폴리머 나노 입자를 포함하는 저유전 박막 형성용 조성물및 이를 이용한 저유전 박막의 제조방법
|
KR101139157B1
(ko)
*
|
2005-02-07 |
2012-04-26 |
삼성전자주식회사 |
단일종의 입체이성질체 만으로 된 실록산 단량체 또는이의 실록산 중합체를 포함하는 저유전 박막 형성용조성물 및 이들을 이용한 저유전 박막의 제조방법
|
KR20060090483A
(ko)
*
|
2005-02-07 |
2006-08-11 |
삼성코닝 주식회사 |
풀러렌을 포함하는 저유전 박막 형성용 조성물, 이를이용한 저유전 박막 및 저유전 박막의 제조방법
|
CN101185160A
(zh)
*
|
2005-06-15 |
2008-05-21 |
陶氏康宁公司 |
固化氢倍半硅氧烷和在纳米级沟槽内致密化的方法
|
US8356407B2
(en)
*
|
2005-09-29 |
2013-01-22 |
Dow Corning Corporation |
Method of releasing high temperature films and/or devices from metallic substrates
|
JP4783117B2
(ja)
*
|
2005-10-21 |
2011-09-28 |
東レ・ダウコーニング株式会社 |
シリカ系ガラス薄層付き無機質基板、その製造方法、コーテイング剤および半導体装置
|
GB0524189D0
(en)
|
2005-11-28 |
2006-01-04 |
Welding Inst |
Process for the production of organosilsesquioxanes
|
JP5185258B2
(ja)
*
|
2006-05-04 |
2013-04-17 |
エージェンシー フォー サイエンス,テクノロジー アンド リサーチ |
機械的可逆性ゲル
|
JP5085649B2
(ja)
*
|
2006-06-28 |
2012-11-28 |
ダウ コーニング コーポレーション |
電子吸引基を有する塩基性添加剤を含有するシルセスキオキサン樹脂システム
|
JP5074488B2
(ja)
*
|
2006-06-28 |
2012-11-14 |
ダウ・コーニング・コーポレイション |
電子求引官能性を有する塩基性添加剤を含むシルセスキオキサン樹脂システム
|
WO2008018981A2
(en)
|
2006-08-04 |
2008-02-14 |
Dow Corning Corporation |
Silicone resin and silicone composition
|
KR101361593B1
(ko)
*
|
2006-12-20 |
2014-02-21 |
다우 코닝 코포레이션 |
경화된 실리콘 수지 조성물의 다층으로 피복되거나 적층된 유리 기판
|
US8277939B2
(en)
*
|
2006-12-20 |
2012-10-02 |
Dow Corning Corporation |
Glass substrates coated or laminated with cured silicone resin compositions
|
JP5149512B2
(ja)
*
|
2007-02-02 |
2013-02-20 |
東レ・ダウコーニング株式会社 |
液状硬化性組成物、コーテイング方法、無機質基板および半導体装置
|
US8642246B2
(en)
*
|
2007-02-26 |
2014-02-04 |
Honeywell International Inc. |
Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
|
US7905994B2
(en)
*
|
2007-10-03 |
2011-03-15 |
Moses Lake Industries, Inc. |
Substrate holder and electroplating system
|
JP5313478B2
(ja)
*
|
2007-10-05 |
2013-10-09 |
東レ・ダウコーニング株式会社 |
セラミック状酸化ケイ素系被膜の形成方法、セラミック状酸化ケイ素系被膜を有する無機質基材の製造方法、セラミック状酸化ケイ素系被膜形成剤および半導体装置
|
US20090188553A1
(en)
*
|
2008-01-25 |
2009-07-30 |
Emat Technology, Llc |
Methods of fabricating solar-cell structures and resulting solar-cell structures
|
US8450442B2
(en)
*
|
2008-03-04 |
2013-05-28 |
Dow Corning Corporation |
Borosiloxane composition, borosiloxane adhesive, coated and laminated substrates
|
EP2265674A1
(en)
*
|
2008-03-04 |
2010-12-29 |
Dow Corning Corporation |
Silicone composition, silicone adhesive, coated and laminated substrates
|
KR20110013509A
(ko)
*
|
2008-05-27 |
2011-02-09 |
다우 코닝 코포레이션 |
접착 테이프 및 접합 유리
|
TW201004795A
(en)
*
|
2008-07-31 |
2010-02-01 |
Dow Corning |
Laminated glass
|
CN104101955B
(zh)
|
2009-02-05 |
2016-12-07 |
日本航空电子工业株式会社 |
光连接器装置
|
US8262894B2
(en)
|
2009-04-30 |
2012-09-11 |
Moses Lake Industries, Inc. |
High speed copper plating bath
|
US8557877B2
(en)
|
2009-06-10 |
2013-10-15 |
Honeywell International Inc. |
Anti-reflective coatings for optically transparent substrates
|
KR101224514B1
(ko)
|
2010-07-05 |
2013-01-22 |
한국과학기술연구원 |
환형 실세스퀴옥산을 이용한 실록산계 저유전막 및 이의 제조방법
|
KR101248530B1
(ko)
|
2010-09-17 |
2013-04-03 |
한국과학기술연구원 |
가지형 실세스퀴옥산 폴리머 중합용 모노머 조성물, 이로부터 합성된 가지형 실세스퀴옥산 폴리머 및 이의 합성방법
|
JP2014500897A
(ja)
|
2010-11-09 |
2014-01-16 |
ダウ コーニング コーポレーション |
有機リン酸化合物により可塑化されたヒドロシリル化硬化シリコーン樹脂
|
US8864898B2
(en)
|
2011-05-31 |
2014-10-21 |
Honeywell International Inc. |
Coating formulations for optical elements
|
US8927652B2
(en)
*
|
2012-12-07 |
2015-01-06 |
Ppg Industries Ohio, Inc. |
Coating compositions for food and beverage containers
|
JP2017518521A
(ja)
|
2014-04-09 |
2017-07-06 |
ダウ コーニング コーポレーションDow Corning Corporation |
光学素子
|
DE112015001719T5
(de)
|
2014-04-09 |
2016-12-29 |
Dow Corning Corporation |
Hydrophober Artikel
|
EP3194502A4
(en)
|
2015-04-13 |
2018-05-16 |
Honeywell International Inc. |
Polysiloxane formulations and coatings for optoelectronic applications
|
WO2017142648A1
(en)
|
2016-02-19 |
2017-08-24 |
Dow Corning Corporation |
Aged polymeric silsesquioxanes
|
FI129480B
(en)
*
|
2018-08-10 |
2022-03-15 |
Pibond Oy |
Silanol-containing organic-inorganic hybrid coatings for high-resolution patterning
|