KR900019209A - 동합금으로 제조된 초미선(超微線)과 그것을 사용한 반도체소자 - Google Patents

동합금으로 제조된 초미선(超微線)과 그것을 사용한 반도체소자 Download PDF

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KR900019209A
KR900019209A KR1019890006633A KR890006633A KR900019209A KR 900019209 A KR900019209 A KR 900019209A KR 1019890006633 A KR1019890006633 A KR 1019890006633A KR 890006633 A KR890006633 A KR 890006633A KR 900019209 A KR900019209 A KR 900019209A
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semiconductor device
group
ppm
total content
copper alloy
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KR1019890006633A
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오노도시아끼
마꼬도 기노시다
도시노리 이시이
기요아끼 쓰무라
히도시 후지모도
슈우이찌 오오사카
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나가노 다께시
미쓰비시 긴소꾸 가부시기가이샤
시기 모리야
미쓰비시 덴기 가부시기가이샤
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Priority claimed from JP63121477A external-priority patent/JPH01291435A/ja
Priority claimed from JP63121476A external-priority patent/JPH01290231A/ja
Application filed by 나가노 다께시, 미쓰비시 긴소꾸 가부시기가이샤, 시기 모리야, 미쓰비시 덴기 가부시기가이샤 filed Critical 나가노 다께시
Publication of KR900019209A publication Critical patent/KR900019209A/ko

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Abstract

내용 없음

Description

동합금으로 제조된 초미선(超微線)과 그것을 사용한 반도체소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (6)

  1. S, Se, Te 및 밸런스동(balance copper)으로 이루어진 그룹에서 선택된 적어도 하나의 성분을 전제함량 1. 0 ppm 이하정도 함유하는 무산소구리로 기본적으로 구성된 기재와 Si, Al, Cr, Fe, Mn, Ni, P, Sn 및 Zn으로 이루어진 그룹에서 선택된 전체함량이 1.0 내지 500ppm인 적어도 하나의 합금원소로 구성된 것을 특징으로 하는 초미동 합금선.
  2. 제1항에 있어서, 전기한 합금원소는 Si인 것을 특징으로 하는 초미동합금선
  3. 제1항에 있어서. 전기한 합금원소는 Al, Cr, Fe, Mn, Ni, P, Sn 및 Zn으로 이루어진 그룹에서 선택된 적어도 하나의 성분과 Si이고, 합금원소의 전체함량이 1.0 내지 500ppm의 범위인 것을 특징으로 하는 초미등합금선.
  4. 반도체회로, 리이드프레임 및 연결선으로 구성된 반도체 소자에 있어서, 전기한 연결선은 S, Se, Te 및 밸런스동으로 이루어진 그룹에서 선택된 적어도 하나의 성분을 전체함량 1.0ppm 이하정도 함유하는 무산소구리로 기본적으로 구성된 기재와. Si, Al, Cr, Fe Mn, Ni, P, Sn 및 Zn 으로 이루어진 그룹에서 선택된 전체함량이 1.0 내지 500ppm인 적어도 하나의 합금원소로 구성된 개선된 초미동합금선인 것을 특징으로 하는 반도체소자.
  5. 제 4항에 있어서, 전기한 합금원소는 Si인 것을 특징으로 하는 반도체소자.
  6. 제 4항에 있어서, 전기한 합금원소는 Al, Cr, Fe Mn, Ni, P, Sn 및 Zn으로 이루어진 그룹에서 선택된 적어도 하나의 성분과 Si이고 , 합금원소의 전체함량이 1.0 내지 500ppm의 범위인 것을 특징으로 하는 반도체 소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890006633A 1988-05-18 1989-05-18 동합금으로 제조된 초미선(超微線)과 그것을 사용한 반도체소자 KR900019209A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP63121477A JPH01291435A (ja) 1988-05-18 1988-05-18 半導体装置用銅合金極細線及び半導体装置
JP63-121477 1988-05-18
JP63-121476 1988-05-18
JP63121476A JPH01290231A (ja) 1988-05-18 1988-05-18 半導体装置用銅合金極細線及び半導体装置

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KR900019209A true KR900019209A (ko) 1990-12-24

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KR1019890006633A KR900019209A (ko) 1988-05-18 1989-05-18 동합금으로 제조된 초미선(超微線)과 그것을 사용한 반도체소자

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KR (1) KR900019209A (ko)
DE (1) DE3916168A1 (ko)
GB (1) GB2220956B (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4304878A1 (ko) * 1992-02-21 1993-08-26 Furukawa Electric Co Ltd
DE102004010040A1 (de) * 2004-03-02 2005-09-15 Norddeutsche Affinerie Ag Kupferdraht sowie Verfahren und Vorrichtung zur Herstellung eines Kupferdrahtes
US8610291B2 (en) * 2006-08-31 2013-12-17 Nippon Steel & Sumikin Materials Co., Ltd. Copper alloy bonding wire for semiconductor device
WO2011013527A1 (ja) * 2009-07-30 2011-02-03 新日鉄マテリアルズ株式会社 半導体用ボンディングワイヤー
WO2017221434A1 (ja) * 2016-06-20 2017-12-28 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4311522A (en) * 1980-04-09 1982-01-19 Amax Inc. Copper alloys with small amounts of manganese and selenium
GB2175009B (en) * 1985-03-27 1990-02-07 Mitsubishi Metal Corp Wire for bonding a semiconductor device and process for producing the same

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GB2220956A (en) 1990-01-24
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